Structural,morphological, dielectric and magnetic properties of Zn-Zr co-doping yttrium iron garnet

In this study, yttrium iron garnet co-doped with Zn and Zr atoms with a chemical formula Y₃Zn_xZr_xFe_(5−2x)O₁₂ (x = 0.0-0.3) has been successfully prepared by the solid-state reaction method. The effects of doping concentration on the microstructure, crystal structure, magnetic properties, and dielectric properties of Y₃Zn_xZr_xFe_(5−2x)O₁₂ were investigated. The microstructure analysis indicates that co-doping of YIG with Zn and Zr can effectively reduce the grain size of the ceramic. The crystal structure results reveal that the doping concentration of Zn–Zr has substantial influence on the lattice parameters of YIG, such as, increases the lattice constant, crystal cell size, and interplanar spacing. However, the second phase of ZrO₂ appears once x ≥ 0.15. Additionally, the dielectric properties of YIG ferrite can be regulated using this Zn–Zr co-doping method. Zn–Zr co-doping can improve the dielectric stability and reduce the dielectric loss at high temperature. The magnetization measurement shows that the saturation magnetization is stabilized at x < 0.15, and the magnetic loss is decreased with the increase in the doping concentration. Overall, the findings show that the ceramic with x = 0.1 exhibits better properties included high saturation magnetization (24.607 emu/g), low magnetic loss (0.0025 @ 1 MHz), and relatively low dielectric loss (496 @ 400°C).     

Coexistence of three ferroelectric phases and enhanced piezoelectric properties in BaTiO3–CaHfO3 lead-free ceramics

Perovskite ferroelectrics possess the fascinating piezoelectric properties near a morphotropic phase boundary, attributing to a low energy barrier that the results in structural instability and easy polarization rotation. In this work, a new lead-free system of (1-x)BaTiO₃-xCaHfO₃ was designed, and characterized by a coexistence of ferroelectric rhombohedral-orthorhombic-tetragonal (R-O-T) phases. With the increase amount of CaHfO₃ (x), a stable coexistence region of three ferroelectric phases (R-O-T) exists at 0.06 ≤ x ≤ 0.08. Both large piezoelectric coefficient (d₃₃～400 pC/N), inverse piezoelectric coefficient (d₃₃^*～547 pm/V) and planar electromechanical coupling factor (k_p～58.2%) can be achieved for the composition with x = 0.08 near the coexistence of three ferroelectric phases. Our results show that the materials with the composition located at a region where the three ferroelectric R-O-T phases coexist would have the lowest energy barrier and thus greatly promote the polarization rotation, resulting in a strong piezoelectric response.     

Antimicrobial residues survey by LC-MS in food-producing animals in Lebanon

ABSTRACT

The treatment of animals with antimicrobial products may lead to the contamination of edible tissues by their residues, which may represent a risk to human health. Therefore, this study aimed to determine the level of antimicrobial residues in food-producing animals (chicken, beef, and milk) in Lebanon. A total of 310 samples were collected and analysed using an LC-MS/MS for the determination of 48 compounds belonging to different families in order to map their compliance according to the European Commission decision 2002/657/EC. Results show that 60% of the analysed samples were not contaminated by any residue, while 12% presented a concentration higher than the MRLs for tetracyclines, sulphonamides, quinolones, and macrolides. Results revealed that chicken were the most contaminated by antimicrobial residues, when compared to beef and milk. The obtained results demonstrate the uncontrolled use of antimicrobials in some Lebanese farms and claim for better management of livestock.     

Assessment of local strain field in adhesive layer of an unsymmetrically repaired CFRP panel using digital image correlation

The present study focuses on experimental investigation of through the thickness displacement and strain field in thin adhesive layer in single sided (unsymmetrical) patch repaired CFRP (carbon fiber reinforced polymer) panel under tensile load. Digital image correlation (DIC) technique is employed to acquire the displacement and strain (longitudinal, peel and shear) field. Experimental determination of shear transfer length based on shear strain field obtained from DIC is introduced to estimate the optimum overlap length which is an essential parameter in patch design for the repair of CFRP structures. Further, DIC experiment with magnified optics is performed to get an insight into complex and localized strain field over thin adhesive layer especially at critical zones leading to damage initiation. The failure mechanism, load displacement behavior, damage initiation and propagation are closely monitored using DIC. The influence of patch edge tapering on strain distribution in adhesive layer is also investigated. The DIC successfully captures the global and localized strain field at critical zones over thin adhesive layer and further helps in monitoring the damage based on strain anomalies. Strains are found to have maximum magnitude at the patch overlap edge and the shear strain level in adhesive layer is higher than the peel strain. Normal tapering increases the peel strain and has negligible influence on shear strain level in adhesive layer. The recommended overlap length is found to be consistent with the recommendation in the literature. Whole field strain pattern and the overlap length obtained from experiment are further compared with the finite element analysis results and they appear to be in good coherence.     

Anchoring single Pt atoms on hollow Ag3VO4 spheres for improved activity towards photocatalytic H2 evolution reaction

The high cost of noble metal catalysts has been a great bottleneck for the catalyst industry. Using the noble metal at a single-atom level for catalytic applications could dramatically decrease the cost. The impacts of single Pt atoms on the photocatalytic performance of Ag₃VO₄ have been investigated and reported. In this report, single Pt atoms were anchored on the surface of Ag₃VO₄ (AVO) as a cocatalyst, and the resultant composite photocatalyst has been studied for photocatalytic H₂ production from water driven by visible light. The as-prepared AVO particles are hollow nanospheres in the monoclinic phase with a bandgap of 2.20 eV. The light absorption edge of AVO/Pt is slightly red-shifted compared to that of the pristine AVO, indicating more visible light absorption of AVO/Pt. The XPS peaks of Ag, V, and Pt exhibit a significant shift after AVO and Pt get into contact, suggesting the strong interaction between the surface Ag and V atoms, and single Pt atoms. After 3-h illumination, the photocatalytic H₂ evolution amount from AVO/Pt is improved up to 1400 μmol, which is 2.8 times that on the bare AVO. Such efficient photocatalytic H₂ evolution on AVO/Pt is still maintained after five reaction cycles. The better photocatalytic performance of AVO/Pt has been attributed to the more efficient visible light utilization and the lower interfacial charge transfer resistance, as demonstrated in the DRS and EIS spectra. The presence of the surface Pt atoms also leads to a higher amount of reactive radicals, which could efficiently promote the surface redox reactions.     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

LWIP协议在STLite/OS20操作系统中的移植

介绍了免费的TCP/IP协议栈LWIP开发工具和环境,分析了如何实现LWIP的移植,并给出了一种嵌入式系统与网络互联的新思路。     

基于量子效应的微型推进器设计

微/纳机电系统(MEMS/NEMS)技术的发展,大大促进了航空航天领域飞行器的微型化。依据量子理论,有效提取真空中的零点能,并以此作为驱动能源,可以解决微型飞行器由于必须携带燃料而增加重量等问题。从理论上阐述了真空零点能及Casimir力的产生机理,研究了真空中两平行平板和矩形腔等结构设计依据,提出并建立了以Casimir力作为驱动力的微型推进器设计模型。