接地不良引起的Ⅰ类设备与有线电视网络的连接问题

案例：2007年7月，上海梅栊地区一居民购买的液晶电视机使用了近半个月，在与电网电源相连但断开电源开关的状态下引起火灾。     

合成氨扩能改造中锅炉存在的问题及采取的措施

针对天脊集团年产30万t合成氨扩能改造,给2台225t/h高压锅炉带来的除氧器热量过剩、锅炉给水温度升高、主蒸汽温度降低等一系列问题,分析了产生问题的原因,从节约能源、提高锅炉效率考虑,提出了相应的解决问题的办法:利用热量分流、改造省煤器管、增加二级过热器受热面积。经过3年多的生产实践证明,取得了良好的效果。     

国内外离子膜法烧碱生产技术综述(未完继续)

对目前国内外离子膜法烧碱生产装置的相关工艺进行了系统的阐述.     

炉衬产生的氧对真空钢液脱氮的动力学影响

采用 99.99%氧化镁砂捣打炉衬的 2 0kg真空感应炉 ,研究了超低碳钢熔炼时炉衬产生的氧对真空钢液脱氮的影响。试验结果表明 :钢液中氧含量在 1 2 0× 1 0 - 6 时 ,脱氮的限制性环节是界面化学反应 ;随炉衬中氧的逸出 ,当钢液中氧含量在 5 1 0×1 0 - 6 时 ,真空钢液脱氮处于界面化学反应和液相边界层扩散控制的边缘区域 ,脱氮速率降低     

钻探用变量泥浆泵曲轴强度的计算

随着钻探业的不断发展 ,日趋需要大功率的泥浆泵 ,文章介绍了大变量泥浆泵机组中曲轴的设计。     

同成矿期构造减压扩容对内生金矿的控制作用

从同成矿期断裂构造与金矿的关系入手，分析了不同断裂构造形迹的减压扩容机制对金矿类型，矿体形态，矿石品位的控制作用，对寻找盲矿体具有借鉴和指导意义。     

Phase behavior of ternary blends containing dimethylpolycarbonate,tetramethylpolycarbonate and poly[styrene‐co‐(methyl methacrylate)] copolymers (or polystyrene)

The miscibility and phase behavior of ternary blends containing dimethylpolycarbonate (DMPC), tetramethylpolycarbonate (TMPC) and poly[styrene‐co‐(methyl methacrylate)] copolymer (SMMA) have been explored. Ternary blends containing polystyrene (PS) instead of SMMA were also examined. Blends of DMPC with SMMA copolymers (or PS) did not form miscible blends regardless of methyl methacrylate (MMA) content in copolymers. However, DMPC blends with SMMA (or PS) blends become miscible by adding TMPC. The miscible region of ternary blends is compared with the previously determined miscibility region of binary blends having the same chemical components and compositions. The region where the ternary blends are miscible is much narrower than that of binary blends. Based on lattice fluid theory, the observed phase behavior of ternary blends was analyzed. Even though the term representing the Gibbs free energy change of mixing for certain ternary blends had a negative value, blends were immiscible. It was revealed that a negative value of the Gibbs free energy change of mixing was not a sufficient condition for miscible ternary blends because of the asymmetry in the binary interactions involved in ternary blends. Copyright © 2004 Society of Chemical Industry     

Facile modifications of polyimide via chloromethylation: II. Synthesis and characterization of thermocurable transparent polyimide having methylene acrylate side groups

From chloromethylated polyimide, a useful starting material for modification of aromatic polyimides, a thermocurable transparent polyimide having acrylate side groups was prepared. In the presence of 1,8‐diazabicyclo[5,4,0]undec‐7‐ene, chloromethylated polyimide was esterified with acrylic acid to synthesize poly(imide methylene acrylate). The polymer was soluble in organic solvent, which makes it possible to prepare a planar film by spin coating. The polymer film became insoluble after thermal treatment at 230 °C for 30 min. Optical transparency of the film at 400 nm (for 1 µm thickness) was higher than 98 % and not affected by further heating at 230 °C for 250 min. Adhesion properties measured by the ASTM D3359‐B method ranged from 4B to 5B. Preliminary results of planarization testing showed a high degree of planarization (DOP) value (>0.53). These properties demonstrate that poly(imide methylene acrylate) could be utilized as a thermocurable transparent material in fabricating display devices such as TFT‐LCD. Copyright © 2004 Society of Chemical Industry     

Structural and electronic properties of CuInSe2

Structural investigation on monocrystalline CuInSe₂ samples has been made. From the single crystal results, the space group of CuInSe₂ was confirmed to be Iˉ42d and the crystal solidification direction was investigated. Compositional uniformity of the ingots was established by EPMA and it was found that the indium concentration was greater than that for copper. Systematic annealing experiments were carried out in vacuum at different temperatures (as low as 160° C) and for different times. Large variation in resistivity was observed after the annealing treatment. P-type samples were found to convert to n-type after the heat-treatments.     

Study of impurity induced modifications in amorphous N-type (GeSe3·5)100−x Bi x using high pressure technique

The technique of high pressure is utilized to study the carrier transport behaviour in doped and undoped bulk amorphous (GeSe_3·5)_100−x Bi _x (x=0, 2, 4, 10) down to liquid nitrogen temperature to observe impurity induced modifications in amorphous semiconductors. It is observed that pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x=4, 10) semiconductors are markedly different. Results are discussed in view of the incorporation behaviour of the bismuth impurity.