基模螺旋天线的研究

本文提出了一种计算基模螺旋天线的新方法.该方法采用螺旋线段对基模螺旋天线进行划分,只需少量分段就可用矩量法对其进行精确模拟分析.文中求出了螺旋天线上的电流分布和远场方向图,与直线段模拟计算结果吻合良好.求阻抗矩阵 Z时,利用螺旋天线的对称性和周期性,只需求出一小部分元素就可得到Z 矩阵的其它元素的值.该方法分段数少,使得计算时间和计算所需存储量大大减小,计算速度和精度显著提高.     

In-situ monitoring and control for MOCVD growth of AlGaAs and InGaAs

We have used spectroscopic ellipsometry to perform real-time monitoring during metalorganic chemical vapor deposition growth of AlGaAs (on GaAs) and InGaAs (on GaAs and InP). Optical constants for these materials were obtained up to growth temperatures of 600 to 700°C. This information permits real-time extraction of composition and layer thickness from the raw ellipsometric data at sample rates on the order of 0.5 Hz. We describe closed-loop control of composition and total layer thickness on AlGaAs-based structures, including Bragg reflectors. In-situ data obtained on double-heterostructure quantum-well laser structures demonstrate that spectroscopic ellipsometry is an extremely powerful monitoring and quality-control tool, giving important real-time information on complex structures that would be difficult and time-consuming to obtain after growth.     

稀土混合物水溶液中囊泡的形成

依据柠檬酸的螯合作用和乙二醇的空间位阻效应，获得了稀土混合物囊泡。并利用ＩＣＰ、ＴＥＭ、ＦＳ等仪器对囊泡的性能进行了研究，最后对囊泡的形成机理进行了讨论。     

隔河岩重力拱坝拱座深层处理平面有限元分析

清江隔河岩重力拱坝坝基地质条件复杂，软弱夹层，断裂构造多，岩溶发育，两岸拱座存在局部滑动问题。     

多传感器检测中的数据溶合技术

多传感器检测是使用多种(或多个)传感器对同一被测对象进行广泛的测量。应用多传感器检测技术和多传感器数据溶合技术对车削加工中的零件外圆尺寸检测进行了实验研究,结果表明,多传感器检测技术能够满足现代检测技术对信息的精确要求,使得检测监控系统更加准确、可靠。     

多丝正比室中电子的最大漂移时间

多丝正比室中电子的最大漂移时间是逃逸门电路中的一个重要参数。这个参数的选择将影响逃逸门工作方式的多丝正比室的整体性能。通过实验测量得到了多丝正比室中电子的最大漂移时间的实际值和最大漂移时间随多丝正比室工作状态的变化，测量结果在实际中得到应用。     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

1，2─双（二乙基膦基）乙烷的合成

以二乙基氯化膦为原料，经乙炔化及加氢两步合成了１，２－双（二乙基膦基）乙烷，产率超过文献值。用红外光谱和核磁共振波谱分别测定了结构。