自聚焦光纤对半导体激光束的准直研究

介绍了一种新颖的利用自聚焦光纤对半导体激光束的准直技术。该方法结构简单、调整方便。实验研究表明其可使大发散角的半导体激光束压缩到0.01º的数量级,适合作半导体激光器的准直元件而运用于精密测试领域。     

Status and application of HgCdTe device modeling

In this article, device modeling refers to numerical simulation of semiconductor device physics to predict electrical behavior. The silicon integrated circuit industry provides the example for the use of technology computer-aided design to simulate wafer fabrication processes, and the electrical performance of devices and circuits. This paper first reviews semiconductor device modeling in general, then as applied in work supporting the development and analysis of HgCdTe infrared detectors. Example applications of one- and two-dimensional device modeling are simulation of a bias-selectable, integrated two-color detector, and two-dimensional effects on the spectral response of a HgCdTe detector with composition grading.     

GaAsP混晶中Fe杂质能级的无序分裂

GaAsP混晶中Fe杂质基态与激发态的光离化截面的幅度比S(x)随组分x有规律地变化,本文提出一种理论估算,认为它是Fe能级无序分裂的结果.     

集成半导体器件的工作稳定性与频响设计

本文用频响特性与试验研究相结合的方法,对三个微电子产品实例进行模拟,讨论了如何设计补偿元件,防止自激振荡,保证闭环稳定且满足各项性能指标要求的问题。     

柯伐镀金盖板电化学腐蚀的剖析及其防腐措施

对半导体器件封装的气密性失效进行了研究。发现，柯伐镀金盖板遭致电化学腐蚀是导致气密性失效的主要原因。对电解液的形成和电化学腐蚀机理进行了深入的分析。提出了防止腐蚀，提高器件气密可靠性的思路和方法。     

基于COM＋技术的Web服务封装研究

早期的信息管理系统都是用于实现企业特定的业务功能而建立的,包括对企业生产、供应、销售以及客户服务等的控制和管理。企业按照职能部门建立了各种企业信息系统,这些信息管理系统被其所在部门所使用,并在实际的工作生产中发挥了巨大作用。该文从整体考虑各个企业信息管理系统,并根据具体业务的需求对这些系统进行统一编排,通过一个合适的集成平台把现有企业信息管理系统进行有机的整合起来,使各＂信息孤岛＂联系起来。     

基于MPC850 VxWorks系统的BSP设计

首先介绍嵌入式系统VxWorks及其启动过程;分析了基于MPC 850最小系统的硬件和BSP的执行流程;重点研究了MPC850BSP的设计与应用程序加载,包括其硬件驱动程序的设计、应用程序加载、建立调试环境和target server的配置等;基于MPC850系统的Vxworks BSP调试平台的实现,对Vxworks上层应用软件和底层硬件驱动的并行开发有着很重要的意义。     

Transistors made in laser recrystallized polysilicon on insulator films

lpcvd polycrystalline silicon films were deposited on thermally oxidized silicon as well as onlpcvd silicon nitride deposited on silicon. Acw argon ion laser was used to recrystallize the polysilicon film into large grains (grain size from 5μm to 40μm). Boron was then implanted and standard N-channel silicon gate process and N-channel metal gate process were carried out to realisemosfets on this material. Channel mobilities upto 450 cm²/V-sec for electrons have been measured. This thin filmmosfet has a four-terminal structure with a top and a bottom gate and the influence of one gate on the drain current due to the other gate has been investigated. Comparison of theI _D v-V _D curves of the devices with physical models was found in good agreement.     

SiC MOSFET模块结温监测研究

碳化硅金属氧化物半导体场效应管SiC MOSFET(silicon carbide metal oxide semiconductor field effect transistor)以其优异的材料特性成为一种很有前景的高功率密度和高效率器件,而结温是其设计和工作的一个重要参数,也是健康状态的重要指标。为了状态监控的需求,提出一种受自热影响较少的基于准阈值电压的结温提取方法。首先,从理论层面证实了阈值电压VTH与温度有良好的线性关系,具有负的温度敏感度。然后,实验观察了外部驱动电阻RGext对VTH的影响。最后,结合智能驱动提出了获取准阈值电压的电路,实验结果证实了所提方法的可行性。