电子产品研制阶段可靠性增长试验研究

结合工程实际经验,深入讨论了可靠性增长过程及实现途径,在保持试验条件和改进过程不变的条件下,实施了对具体型号电子产品的可靠性增长试验,达到了预期的可靠性增长目标,并且利用可靠性增长试验的数学模型(AMSAA模型)来评估产品的可靠性增长,对开展可靠性增长与可靠性增长试验工作具有重要的实际意义.     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

Electronic properties of magnetically doped nanotubes

Effect of doping of carbon nanotubes by magnetic transition metal atoms has been considered in this paper. In the case of semiconducting tubes, it was found that the system has zero magnetization, whereas in metallic tubes the valence electrons of the tube screen the magnetization of the dopants: the coupling to the tube is usually antiferromagnetic (except for Cr).     

聚硅烷的电子特性及非线性光学材料

综述了聚硅烷的电子结构、光吸收特性。重点介绍了聚硅烷在非线性光学材料中的研究与应用。     

电力电子的绿色变换技术与绿色电源的发展

电力电子技术应用日益广泛,同时也带来严重的谐波污染和电磁干扰。本文介绍了电力电子在电磁兼容和谐波抑制方面的绿色变换技术。同时还就绿色电源产业的形成和绿色电源产品要求作了简要说明。     

一种基于PWM的电压输出DAC电路设计

对实际应用中的脉宽调制(PWM)波形的频谱进行了理论分析．指出通过一个低通滤波器可以把PWM调制的数模转换信号解调出来．实现从PWM到DAC的转换。论文还对转换误差产生的因素进行了分析，指出了减少误差的方法，论文给出了两种从PWM到0～5V电压输出的电路实现方法，第2种电路具有很高的转换精度。     

Staining of poly(ethylene terephthalate) by ruthenium tetroxide

The staining of poly(ethylene terephthalate) (PET) by ruthenium tetroxide (RuO₄) is used to obtain a contrast at the crystalline lamellar scale in transmission electron microscopy. This paper demonstrates the efficiency of this technique conducted in vapor phase on ultracut bulk samples. Advantages of this method against other contrast enhancing techniques and the parameters of staining are discussed. The depth of attack is measured and is shown to be limited by a crosslinking process. The chemical mechanisms are investigated by grazing infrared spectroscopy and involve the oxidation of the aliphatic moeities of PET.     

宽带业务发展与"撒手锏"、"产业链"的关系

重点论述下一代网络(NGN)、下一代宽带无线(NGBW)及3G演进中的宽带业务发展与“撒手锏”、“产业链”及持续创新与发展的关系。     

芴酮在合成功能高分子方面的应用

介绍了由芴酮合成的双酚芴在高分子材料方面的应用，尤其是在环氧树脂、聚碳酸酯、有机玻璃方面，与双酚A相比，用双酚芴改性的高分子材料具更高的耐热性及透明性。     

基于SOI的双极场效应晶体管

在分析了双极型晶体管和场效应晶体管各自的特点和不足后，介绍了一种既具有双极型晶体管较大电流容量和功率输出，又具有场效应晶体管高输入阻抗的电子器件——双极MOS场效应晶体管(BJMOSFET)，同时指出体硅BJMOSFET的阳极扩散区与衬底之间存在较大的漏电流，可产生较大的寄生效应。提出了一种新型固体电子器件——基于SOI的BJMOSFET，分析了其工作原理j与体硅BJMOSFET比较，由于SOI技术完整的介质隔离避免了体硅器件中存在的大部分寄生效应，使基于SOI的BJMOSFET在体效应、热载流子效应、寄生电容、短沟道效应和闩锁效应等方面具有更优良的特性。