玻璃基底和表面粗糙度在氮化硅薄膜椭偏测量中的影响

在光谱椭偏测量中,玻璃基底的背反射会给测量结果造成较大影响。针对平板显示器件玻璃基底表面氮化硅镀膜进行了椭偏测量和模型计算。采用相干背反射模型“空气基底空气”计算并拟合得到与厂商数据符合较好的玻璃基底折射率。对氮化硅薄膜采用Tauc Lorentz色散模型进行了分析拟合,讨论了薄膜与基底界面层、表面粗糙度对光学常数及模型拟合的影响,表明在薄膜与基底间晶格失配的情况下,界面层的引入对改善拟合度是必要的。给出了薄膜体系的光学常数、薄膜结构的分析结果。     

螺旋波等离子体发射光谱研究

为了解螺旋波等离子体的光学行为及特性,对螺旋波等离子体氩气放电进行了发射光谱(OES)测量,结果显示:谱线强度在模式转换时出现大幅增加。研究了不同气压下谱线强度随功率的变化关系,并采用发射光谱强度比值法对电子激发温度进行了计算,结果表明:在螺旋波放电阶段对应的电子激发温度随着功率增加呈下降趋势。     

东乌煤及不同化学组分的傅里叶红外分析

通过对东乌煤及其腐殖酸、抽提腐殖酸残煤、抽提沥青质残煤进行傅里叶红外分析,揭示抽提腐殖酸和抽提沥青质实验对煤结构的影响。结果表明:由于酸碱溶液的影响,腐殖酸残煤中芳香烃振动的峰,脂肪烃的伸缩振动峰,3400cm-1附近的峰都变弱;由于吡啶溶剂的影响,沥青质残煤中反映芳香结构的峰变尖锐;煤样的fa随H/C增加有减小趋势,而随着O/C的增加呈增大趋势;煤样中腐殖酸的脂肪链最长,支链最少;腐殖酸残煤的脂肪链最短,支链最多。     

白光LED用Ce，Sm共掺杂YAG单晶荧光材料的光谱性能

对白光发光二极管（light-emitting diode,LED）用Y3Al5O12（YAG）单晶荧光材料的制备和光谱性能进行了研究。采用提拉法生长了白光LED用Ce：YAG及Sm,Ce：YAG晶体,并通过吸收光谱、激发光谱和发射光谱等对晶体的光谱特性进行表征。结果表明：Ce：YAG单晶作为荧光材料被发射波长460 ...     

Tm3+掺杂硅酸盐玻璃的1.8μm光谱性质

研究了Tm掺杂硅酸盐玻璃的热稳定性、1.8μm荧光性质.测试了玻璃样品的特征温度、吸收光谱和荧光光谱:根据吸收光谱,计算并讨论了玻璃样品的吸收和发射截面、Judd-Ofelt参数、辐射跃迁几率和辐射寿命等光谱参量.计算得出Tm3+:3F4→3H6能级跃迁的辐射寿命达到5.62ms,受激发射截面和辐射寿命的乘积σem×τ...     

近红外光谱技术的定性和定量分析

近红外光谱(NIR)分析技术具有简便、快捷、低成本、无污染以及不破坏样品等优点,是近年来发展最为迅速的实用分析技术之一.从近红外光谱的原理、特点以及定性分析和定量分析应用方面进行了论述,阐述光谱解析在近红外光谱定性和定量研究中的重要作用.     

Plutonium Third Phase Formation in the 30% TBP/Nitric Acid/Hydrogenated Polypropylene Tetramer System

Abstract

A study on plutonium third phase formation in 30% TBP/nitric acid/hydrogenated polypropylene tetramer (HPT) was performed. Characterization studies of HPT indicate its composition to be a mixture of many highly branched alkanes with a volatility close to n‐undecane. This composition results in about a factor of two better resistance to Pu(IV) third phase formation than dodecane. At 7 M nitric acid in the aqueous phase, the presence of Pu(VI) was observed to substantially reduce the organic phase metal concentration necessary to induce phase splitting in both diluents. Spectroscopic investigation of mixed valence systems also suggest a prominent role for Pu(VI) in the formation of the dense organic phase. Accumulation of Pu(VI) in the heavy phase, as well as certain spectral features, suggest that Pu(VI) is forming a different species, possibly a plutonyl trinitrato, with a strong tendency to form third phase.     

Interfacial Chemistry of Langmuir-Blodgett Deposited Polyimide Films on Si (100)

Using the Langmuir-Blodgett (LB) technique, ultrathin films of the octadecylammonium salt of polyamic acid (PACS) on (100) oriented silicon wafers with one, three and five monolayers were prepared. The imidization of the films was investigated with x-ray photoelectron spectroscopy (XPS) during a stepwise heating procedure in vacuum. Significant differences in the XPS spectra indicate an incomplete polymerization of the films as a function of film thickness. It is believed that the chemical interaction at the interface between Si substrate and PACS is responsible for the incomplete polymerization of the LB film in direct contact with the substrate. From ellipsometric measurements the absolute thickness of a PACS and a polyimide layer has been determined to be 1.7 nm and 0.6nm, respectively. These measurements allow us to determine the electron mean free path for the Si2p electrons (E_k=1153 eV) of λ = 4.2±0.1 nm through these films.     

Effect of Ar annealing temperature on SiO2/4H-SiC interface studied by spectroscopic ellipsometry and atomic force microscopy

The authors have investigated the effects of different annealing temperatures in Ar atmosphere on the SiO₂/4H-SiC interfaces by spectroscopic ellipsometry (SE) and atomic force microscopy (AFM). There is a strong correlation between the annealing temperatures and the quality of SiO₂/4H-SiC interface. Annealing at 600 °C can significantly improve the quality of SiO₂/4H-SiC interface with no transition layer. The reasons for such improvement in the quality of the SiO₂/4H-SiC interface after moderate temperature annealing at 600 °C may be explained by the formation and consumption of carbon clusters and silicon oxycarbides during annealing.     

钛合金中锰铬锆元素的看谱分析方法

用光栅看谱镜和棱镜看谱镜分析钛合金及成分元素锰、铬、锫的特征谱线,研究钛合金中锰、铬、锆元素的定性分析、半定量分析方法.锰、铬、锫元素可分别使用Mn 475.40谱线组、cr520.45谱线组和Zr 473.95谱线组进行定性和半定量分析.