Studies on nucleation kinetics of InxGa1−xN/GaN heterostructures

Nucleation kinetics during the growth of In_xGa_1−xN on a GaN substrate have been studied. The behavior of nonequilibrium between the In_xGa_1−xN and the GaN substrate has been analyzed, and hence, the expression derived for the stress-induced supercooling/superheating has been numerically evaluated. The maximum amount of stress-induced supercooling is found to be 1.017 K at x=0.12. These values are incorporated in the classical heterogeneous nucleation theory. Using the regular solution model, the interfacial tension between the nucleus and substrate and, hence, the interfacial tension between nucleus and mother phase and thermodynamical potential of the compounds have been calculated. The amount of driving force available for the nucleation has been determined for different compositions and degrees of supercooling. It has been shown that the value of the interaction parameter of InN-GaN plays a dominant role in nucleation and growth kinetics of In_xGa_1−xN on a GaN substrate. These values have been used to evaluate the nucleation parameters. It is shown that the nucleation barrier for the formation of a In_xGa_1−xN nucleus on a GaN substrate is minimum in the range of x=0.12 to x=0.17, and it has been qualitatively proved that good quality In_xGa_1−xN on GaN can be grown only in the range 0<x≤0.2.     

原始组织及加热方式对Al-5.8wt%Cu合金熔化行为的影响

利用DSC分析手段，研究了具有3种不同凝固组织的Al-5.8wt%合金在7种不同加热方式下的熔化开始温度和熔化热，发现凝固组织中存在的非平衡共晶在加热过程中大部分扩散溶解，溶入基体，剩余部分参与共晶熔化，其熔化开始温度与组织状态无关，随加热速度的增大略有升高，溶解部分的体积分散与组织状态和加热方式有关，随加热时间和非平衡相表面积的增大而增大。     

换热器防腐蚀方法介绍

文章对换热器的不同保护方法进行了介绍 ,重点讨论了渗铝、渗锌两种方法。在室温～ 80℃自来水和 3.5 %NaCl水溶液中 ,与碳钢基体相比 ,渗铝层的电位发生了反转 ,因而在针孔部位会形成大阴极小阳极的局面 ,易发生点蚀 ;而在相同条件下渗锌层不出现上述点蚀现象 ,更适宜在换热器的应用     

A detailed analysis of ambipolar diffusion in nanostructured metal oxide films

In this paper a transport equation is derived which describes the behaviour of the nanostructured metal oxide films in a photoelectrochemical cell. It is shown that a detailed analysis of the charge compensation mechanism necessarily leads to a transport equation with characteristics similar to but logically distinct from the pure diffusion equation. The studied phenomenon was named ambipolar diffusion in the early 1950s. It takes into account the fact that the diffusion processes of ions and electrons occur at different speeds. A weak electric field therefore couples the processes together to preserve charge neutrality. The electric field in turn affects the transport resulting in a deviation from purely diffusive behaviour. However, this has not been widely recognised in the literature for nanostructured semiconductor films until very recently. In this paper a detailed analysis is presented. It is based on the assumption that the current density is solenoidal. It is shown that application of the ambipolar diffusion model to a photoelectrochemical cell based on a nanostructured metal oxide film leads to an additional term in the transport equation, rather than only a new diffusion coefficient as in earlier work. It is also shown that the boundary conditions interact closely with the equation to form a transport model.     

铜基催化剂孔隙率对气体有效扩散系数的影响

研究了18种具有不同孔结构参数的粒状铜基甲醇合成催化剂孔隙率对有效扩散系数的影响。结果发现，催化剂微孔孔隙率增大，曲节因子亦增大，扩散阻力增加。将孔隙率与催化剂曲节因子关联，得到了半经验方程，用它可估算催化剂的曲节因子。     

Influence of process variables on the drying of potato slices

Investigation of the effects of varying air velocity, slice thickness, and pre-treatment with sodium chloride solutions and surface active agents on drying potato slices indicated that the drying occurred entirely in the falling rate period and was controlled by the mechanism of liquid diffusion. The rate of drying, and therefore the diffusion coefficients, increased with the addition of sodium chloride and surface active agents. Diffusion coefficients were also influenced by air velocity and slice thickness, suggesting that the rate of drying of potato slices is controlled by a combination of internal and external resistances.     

LF6铝合金的超塑性／扩散连接组合工艺试验及理论研究EI

本文研究了ＬＦ６铝合金的超塑性／扩散连接组合工艺，用变形和再结晶的方法细化晶粒，成功地进行了ＳＰＦ／ＤＢ工艺试验，利用电子探针观察了扩散连接接头的界面微观区域，并从机理上分析了金属的超塑性／扩散连接两种工艺之间的内部联系及其金属学行为。     

Oxygen Tracer Diffusion in Vitreous Silica

Oxygen diffusion in vitreous silica glass is studied using the gas exchange technique. The tracer concentration profiles are consistent with a model based on two mechanisms, one network and the other interstitial. These processes are coupled through limited network–interstitial exchange. Nuclear reaction analysis and secondary ion mass spectrometry techniques are performed and compared. These results are compared to experiments on transport in thin silica films grown on single-crystal silicon.     

Diffusion in metallic glasses

Rutherfordα-particles backscattering technique was employed for measurements of diffusion rates in metallic glasses. Effects of relaxation, crystallization and plastic deformation on diffusion rates were also investigated. It has been observed that the diffusion rates of a metallic solute are of the same orders of magnitude in both metal-metal and metal-metalloid glasses. A higher diffusivity is likely if there is a large difference between melting points of the solute and matrix. Relaxation has no effect on diffusion, however, diffusivity increases on crystallization. An increase in diffusivity is also observed on plastic deformation of metallic glass.     

硅外延片中的杂质控制

有5类掺杂源影响硅的外延片中的杂质分布。主掺杂质控制外延层的杂质浓度，决定外延层的电阻率。固态外扩散、气相自掺杂和系统自掺杂影响衬底界面附近的外延层杂质浓度的深度分布。该文介绍了此3类掺杂源的掺杂过程和抑制方法。金属杂质在外延层中对器件有害，防止沾污和使用吸杂技术能降低金属杂质在外延层中的浓度。