Pseudocapacitive Sodium Storage by Ferroelectric Sn2P2S6 with Layered Nanostructure

Sodium ion batteries (SIB) are considered promising alternative candidates for lithium ion batteries (LIB) because of the wide availability and low cost of sodium, therefore the development of alternative sodium storage materials with comparable performance to LIB is urgently desired. The sodium ions with larger sizes resist intercalation or alloying because of slow reaction kinetics. Most pseudocapacitive sodium storage materials are based on subtle nanomaterial engineering, which is difficult for large‐scale production. Here, ferroelectric Sn₂P₂S₆ with layered nanostructure is developed as sodium ion storage material. The ferroelectricity‐enhanced pseudocapacitance of sodium ion in the interlayer spacing makes the electrochemical reaction easier and faster, endowing the Sn₂P₂S₆ electrode with excellent rate capability and cycle stability. Furthermore, the facile solid state reaction synthesis and common electrode fabrication make the Sn₂P₂S₆ that becomes a promising anode material of SIB.     

Hierarchical CdS Nanorod@SnO2 Nanobowl Arrays for Efficient and Stable Photoelectrochemical Hydrogen Generation

An efficient photoanode based on CdS nanorod@SnO₂ nanobowl (CdS NR@SnO₂ NB) arrays is designed and fabricated by the preparation of SnO₂ nanobowl arrays via nanosphere lithography followed by hydrothermal growth of CdS nanorods on the inner surface of the SnO₂ nanobowls. A photoelectrochemical (PEC) device constructed by using this hierarchical CdS NR@SnO₂ NB photoanode presents significantly enhanced performance with a photocurrent density of 3.8 mA cm^?2 at 1.23 V versus a reversible hydrogen electrode (RHE) under AM1.5G solar light irradiation, which is about 2.5 times higher than that of CdS nanorod arrays. After coating with a thin layer of SiO₂, the photostability of the CdS NR@SnO₂ NB arrays is greatly enhanced, resulting in a stable photoanode with a photocurrent density of 3.0 mA cm^?2 retained at 1.23 V versus the RHE. The much improved performance of the CdS NR@SnO₂ NB arrays toward PEC hydrogen generation can be ascribed to enlarged surface area arising from the hierarchical nanostructures, improved light harvesting owing to the NR@NB architecture containing multiple scattering centers, and enhanced charge separation/collection efficiency due to the favorable CdS–SnO₂ heterojunction.     

Effect of micro-electrode geometry on NO2 gas-sensing characteristics of one-dimensional tin dioxide nanostructure microsensors

Electrodes with micro-gaps are fabricated by using dc-sputtering and FIB techniques. SnO₂ nanowires are deposited on the micro-gap (1-30 μm) by suspension dropping method to fabricate a micro-gas sensor. The sensing ability of various SnO₂ micro-gap sensors is measured. A comparison between sensors reveals that the short-gap electrode has numerous advantages in terms of reliability, high sensitivity and detection of low concentrations of NO₂, while the large-gap electrode is relatively sensitive for high concentrations. Conductance measurements are carried out at different surface temperatures and NO₂ concentrations in order to investigate the effects that the gap size has on the overall sensor conductance. The results suggest that the interface between the electrode and sensitive layer has a very important role for the sensing mechanism of tin dioxide gas sensors.     

Influence of Ge addition on the morphology and properties of TiN thin films deposited by magnetron sputtering

Thin films of TM-X-N (TM stands for early transition metal and X = Si, Al, etc.) are used as protective coatings. The most investigated among the ternary composite systems is Ti-Si-N. The system Ti-Ge-N has been chosen to extend the knowledge about the formation of nanocomposite films. Ti-Ge-N thin films were deposited by reactive magnetron sputtering on Si and WC-Co substrates at T_s = 240 °C, from confocal Ti and Ge targets in mixed Ar/N₂ atmosphere. The nitrogen partial pressure and the power on the Ti target were kept constant, while the power on the Ge target was varied in order to obtain various Ge concentrations in the films. No presence of Ge-N bonds was detected, while X-ray photoelectron spectroscopy measurements revealed the presence of Ti-Ge bonds. Transmission Electron Microscopy investigations have shown important changes induced by Ge addition in the morphology and structure of Ti-Ge-N films. Electron Energy-Loss Spectrometry study revealed a significant increase of Ge content at the grain boundaries. The segregation of Ge atoms to the TiN crystallite surface appears to be responsible for limitation of crystal growth and formation of a TiGe_y amorphous phase.     

ZnO基纳米电子材料研究进展

纳米ZnO的许多优异性能使其成为人们研究的热点并得到广泛应用.ZnO是一种同时具有半导体和压电双重特性的材料.运用不同的工艺,目前已生长出纳米线(棒)、纳米带、纳米环、四角形纳米结构、纳米笼、纳米螺旋等多种特殊形态的纳米ZnO.由这些许多独特的形态,可以看出纳米ZnO是纳米材料家族中可以生长出的结构最多样的成员之一.这些纳米结构在光电、传导、传感以及生化等不同领域有很多潜在的新颖的应用前景.     

The design of autonomous DNA nano-mechanical devices: Walking and rolling DNA

We provide designs for the first autonomousDNA nanomechanical devices that execute cycles of motion without external environmental changes. These DNA devices translate along a circular strand of ssDNA and rotate simultaneously. The designs use various energy sources to fuel the movements, include (i) ATP consumption by DNA ligase in conjunction with restriction enzyme operations, (ii) DNA hybridization energy in trapped states, and (iii) kinetic (heat) energy. We show that each of these energy sources can be used to fuel random bidirectional movements that acquire after n steps an expected translational deviation of O(√n). For the devices using the first two fuel sources, the rate of stepping is accelerated over the rate of random drift due to kinetic (heat) energy. Our first DNA device, which we call walking DNA, achieves random bidirectional motion around a circular ssDNA strand by use of DNA ligase and two restriction enzymes. Our other DNA device, which we call rolling DNA, achieves random bidirectional motion without use of DNA ligase or any restriction enzyme, and instead using hybridization energy. We also describe how to modify the design for the rolling DNA device to include a ``latching mechanism' that fixes the wheels position at specified location along the road, so as to provide for overall unidirectional translational movement. This revised version was published online in June 2006 with corrections to the Cover Date.     

分子自组装体系的影响因素及其在纳米材料中的应用

介绍了分子自组装体系的影响因素以及分子自组装技术在纳米材料制备方面的应用,并对聚合物自组装体系及研究进展作了综述.     

纳米有序结构制备技术现状

随着对纳米材料需求的不断增长，人们对如何制备纳米有序结构的技术产生了极大的兴趣。主要概述了近期来制备纳米有序结构的一些基本方法例如膜板合成法、自组织方法、欠电位沉积法、掠角沉积法等，并在此基础上简要的介绍了一些相关的概念原理和应用。     

Microstructure of Nanostructured WC-Co Coating Prepared by Thermal Spraying

Nanostructured WC-Co coatings were produced with Atmospheric Plasma Spraying (APS) and Low Pressure Plasma Spraying (LPPS). Microstructure characteristics and phase compositions of the coatings were studied by means of scanning electron microscopy (SEM) and X-ray diffraction (XRD) respectively. The microstructure compositions were analyzed with EDS. During APS deposition the existence of oxygen causes the decarburization of the coating, and the coating was composed of melted area and the WC/12Co powder. Besides WC phase, there was W2C phase. However in the coating deposited by LPPS the content of oxygen was so low that there were a limit degradation of the WC/12Co powder. The coatings were made up of compact block and loosen porosity area. There were large quantities of nanostructure WC grains and a small quantity of microstructure WC grains presented in the coating. Besides WC phase, a little W2C and WC1-x or Co6W6C phases occured. Consideration of the characteristics of the highly porous, spherical-shell morphology of nano-WC/12Co power, heterogeneous melting and localized superheating of the power were two main factors which caused the microstructure and phase composition of nano-WC-Co coatings.     

Application of carbon nanostructures toward SO2 and SO3 adsorption: a comparison between pristine graphene and N-doped graphene by DFT calculations

We studied the adsorption of SO_x (x?=?2,3) molecules on the surface of pristine graphene (PG) and N-doped graphene (NDG) by density functional theory (DFT) calculations at the B3LYP/6-31G(d) level. We used Mulliken and NBO charge analysis to calculate the net charge transfer of adsorbed SO_x on pristine and defected graphene systems. Our calculations reveal much higher adsorption energy and higher net charge transfer by using NDG instead of pristine graphene. Furthermore, the density of state (DOS) graphs point to major orbital hybridization between the SO_x and NDG, while there is no evidence of hybridization by using pristine graphene. Based on our results, it is found that SO₂ and SO₃ molecules can be adsorbed on the surface of NDG physically and chemically with adsorption energies (E_ads) of ?27.5 and 65.2?kJ?mol^?1 (19.6 and 51.4?kJ?mol^?1 BSSE), respectively, while low adsorption energies were calculated in the case of using pristine graphene. So we introduced NDG as a sensitive adsorbent/sensor for detection of SO₂ and SO₃.