Effect of rare-earth doping on the electrical and photoelectrical properties of furazano [ 3,4-b] piperazine (FP) thin-film devices

Schottky diodes of rare-earth, praseodymium (Pr)-doped and samarium (Sm)-doped furazano [3,4-b] piperazine (FP), sandwiched between Al and indium-tin oxide (ITO) were made by a spin-coating technique. The diodes, in which doped FP behaves as a p-type organic semiconductor, exhibit rectification behaviour. The p-type semiconductivity and rectification properties of the devices improve with rare-earth doping. The electrical effects observed in these devices are explained in terms of the p-type semiconducting behaviour of the doped FP thin films and the formation of a blocking contact (Schottky barrier) with the Al electrode and ohmic contact with the ITO electrode. Various electrical parameters such as carrier mobility, position of Fermi level, free carrier concentration, trap density, trap level and conductivity of doped FP are calculated and discussed. It is found that the position of the Fermi level shifts toward the valence band on rare-earth doping; concentration of free carriers and carrier mobility increase on doping. From the capacitance-voltage (C-V measurements, various electrical parameters such as barrier height, density of ionized acceptor atoms and depletion layer width are calculated and discussed. From the action spectra and absorption spectra it is confirmed that the Al-doped FP interface forms a Schottky barrier and the ITO-doped FP interface shows ohmic contact. The photovoltaic measurement on the two devices reveals that the short circuit current, open circuit voltage, fill factor and power conversion efficiency increase on rare-earth doping.     

Measurements of Stress Intensity Factors of an Interface Crack Under Mixed Mode Loading

The optical method of caustics has been utilised to measure both the stress intensity factor for a crack lying along the interface of an aluminium/epoxy bimaterial specimen, and the mode mixity arising from the difference in the elastic properties across the interface. Measurements were carried out by using a novel modification to the method whereby caustics are produced and measured from both sides of the specimen, so compensating automatically for the distortion induced in the specimen due to misaligned loading fixtures. A flat reflective surface across the interface was obtained by adhering a reflective coating to the specimen. Verification that this coating does not affect measurement accuracy was obtained by comparing stress intensity factors measured from coated and uncoated monolithic aluminium specimens where good agreement was found to exist between both measurements.     

水包油型多彩涂料的生产及施工

介绍了水包油型多彩涂料的组成、各组份的作用、生产工艺路线和工艺参数的选择。对多彩涂料的施工机具和方法作了简单介绍。     

空气中烧成的镍导体及其应用

将空气中烧成的镍导体用于散热制冷片制作工艺中，可降低成本，提高合格率。通过实验得到的最佳值为：镍导体中４号玻璃（ＳｉＯ２＞３０，Ｂ２Ｏ３＞１０，ＰｂＯ＜５５，ＴｉＯ２少许）的含量４．５％，化学镀镍时间５０ｍｉｎ，方阻４７．５ｍΩ／□，附着力８．１Ｎ／ｍｍ２。     

油酸乙二醇单酯在基础油与水界面上形成吸附膜的研究

以油酸和乙二醇为原料，在酸性催化剂作用下，用硼酸间接酯化法合成了润滑油油性油酸乙二醇单酯，用界面张力仪测定了单酯含量的矿物油的界面张力。用量小二乘法求得油中油酸乙二醇单脂的浓度与油对水界面张力关系的回归方程。依据所求的回归方程和Ｇｉｂｂｓ公式计算出油酸乙二醇单脂在油与水界面上形成吸附膜时的最低浓度。     

热处理WO3电变色膜稳定性研究

采用电子束蒸发淀积ＷＯ３薄膜。根据已有的ＷＯ３薄膜脱水过程结论而选择适当温度对薄膜进行退火处理。在大量含水的和不含水的两类Ｌｉ＾＋电解质中进行比较性着色和消色循环实验，表明在２９０℃以下热退火处理能明显增加ＷＯ３薄膜在含水 电解质中的循环寿命。     

钛酸铅系薄膜的热释电性能及其应用

叙述了钛酸铅系薄膜的热释电原理，介绍了国际上近几年钛酸铅系薄膜材料、制备工艺及热释电性能，并与块状陶瓷材料进行了比较，分析表明钛酸铅系薄膜具有优良的热释电性能及可观的应用前景。     

电磁波在包含各向异性媒质多层介质中传播的分析

对电磁波在包含各向异性媒质多层介质中的传播进行分析，给出了闭合形式的解，该结构可用作法拉第旋转器，与其它准光元件组合构成的准光环行器或隔离器。也可用作辐射口径，通过改变磁化场方向和强度实现波束扫描或极化变化，给出了法拉第旋转角计算结果和实验结果。     

快干性瓦楞纸箱粘合剂的研制

本文叙述了快干性瓦楞纸箱粘合剂的配制及工艺过程。实验结果表明，该粘合剂具有快的干燥速度和良好的性能