Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.     

The growth and characterization of AlGaAs double heterostructures for the evaluation of reactor and source quality

AlGaAs double heterostructures are grown by low-pressure metalorganic chemical vapor deposition to evaluate the level of oxygen contamination in different trimethylaluminum sources. Effects of arsine purifiers, misoriented substrates, atmospheric exposure of the growth chamber, and possible phosphorus contamination are also studied. Extensive characterization is performed on these films by a variety of methods, including high-resolution x-ray diffraction, photoluminescence (PL), time-resolved photoluminescence, and secondary-ion mass spectrometry. The PL intensities for structures grown with the low-alkoxide grade are reproducibly much greater than those grown with the regular-grade TMA1. The use of AsH₃ purification improves the PL intensity.     

分子结构对增塑聚氯乙烯性能的影响

研究了聚合度、分子量分布和支化结构对增塑聚氯乙烯加工流变性能和物理力学性能的影响。结果表明，增塑ＰＶＣ的加工流变性能随聚合度的增加而恶化；拓宽分子量分布和引入支化结构均有利于加工流变性能的提高；增塑ＰＶＣ的拉伸强度随聚合度的增加而提高，而压缩永久变形却随之减小；分子量分布对物理力学性能的影响不大；支化ＰＶＣ的拉伸强度略有下降。     

An Object-Oriented Transaction Model

In object-oriented database systems(OOBSs),the traditional transaction models are no longer suitable because of the difference between the object-oriented data model(OODM)and the conventional data models(e.g.relational data model).In this paper,transction models for advanced database applications are reviewed and their shortcomings are analyzed.Exchangeability of operations is proposed instead of commuativity and recoverability for using more semantics in transaction management.As a result,an object-oriented transaction model(in short,OOTM)is presented.It is not modeled for some special application,but directly based on object-oriented paradigms.A transaction is regarded as an interpretation of a metho.Each transaction(even subtransactions)keeps relative ACID(Atomicity,Consistency,Isolation,Durability)properties,therefore the special problems appearing in OOBSs such as“long transactions”,“visibility of inconsistent database state”can be solved.     

紫草色素的研究

紫草色素原植物系紫草科Broaginaceae几种植物的根，又称紫根色素。该研究首次用人工栽培的硬紫草(Lithospermum erythrohizon Sieb.)的根，作了加工工艺和特性的研究。产品得率近1％，色价E 1^1Q5nm达150以，卫生指标符合有关规定，是种理想的脂溶性红色素。     

高强IF钢析出物的析出特征

高强ＩＦ钢是汽车用深冲钢板中深冲性能最好的高强度钢板。目前，国际上对该钢种的研究十分活跃。本文在实验条件下，通过对高强ＩＦ钢析出物的观察研究了高强ＩＦ钢析出物的析出特征，发现了新的析出相ＴｉＦｅＰ，并对磷对深冲性能影响的作用机制，进行了探讨。     

无间隙原子钢的微观结构特征和塑性应变比

采用Ｘ射线衍射的ＯＤＦ和ＬＰ分析技术，ＳＥＭ电子通道花样和蚀坑技术观测，研究了超深冲无间隙原子钢板的微观结构特征。结果表明：控制化学成分、保证基体纯净、优选工艺参数，促进强的γ－〈１１１〉∥Ｎ．Ｄ纤维织构的形成是获得优异成型性的关键。用ＣＭＴＰ方法，由ＯＤＦ织构数据从理论计算了塑性应变比（ｒ），表明ｒｍ值高达３．１８。文中讨论了再结晶织构形成机制。     

MIS型单晶硅液晶光阀

详细介绍了一种新颖、快速响应的金属－绝缘层－半导体构成的MIS型单晶硅液晶光阀的结构、工作机理、制作工艺和性能参数测试。液晶采用45°扭曲向列型混合场效应工作模式。所得到的光阀的极限分辨率为40lp／mm，口径40mm，最大对比度＞100：1，在930nm（△λ＝40nm）写入光灵敏度为20μW／cm2，响应时间为15ms。报道了该光阀在大屏幕投影显示中的应用。     

旋波媒质基本参数的一种测试方法

本文提出了直接利用旋波材料板的Ｓ参数获得其基本参数的方法。通过自由空间测量旋波材料板的反射场和透射场，可以反演得到媒质的复介电常数、复磁导率、旋波量以及透射场的轴比和旋转角，测试程序简单，结果精度高。     

Growth of high-quality GaSb by metalorganic vapor phase epitaxy

The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor. The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature hole mobility and hole concentration of 800 cm² V⁻¹ s⁻¹ and 3·10¹⁶ cm^-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence spectrum is dominated by strong excitonic lines.