波束形成和解码的联合迭代接收技术

SDMA技术是提高频谱利用率的有效技术，但在判决反馈最小均方波束形成中，在深衰落之后期望用户波束会指向干扰用户,严重影响了波束形成的性能。文中提出在波束形成和信道解码之后，经过编码、交织，重新生成波束形成的参考信号，再进行波束形成，有效克服了深衰落之后的波束指向错误。计算机仿真结果证明了该方法的有效性。     

回旋管的应用研究

文章论述了推广回旋管应用中所碰到的高功率传输,模式变换和辐射尖锐的波束等技术难点,对现有的准光系统提出了改进措施。     

磁偏转电子枪研制核靶

文章叙述了磁偏转电子枪的原理和结构以及用ＥＱＤ－３型电子枪研制各种核靶的工艺过程。     

梯度折射率棒中传播的高斯光束轨迹解析解及其存在条件的讨论

本文提出光束轨迹方程的一般解，导出解析解的存在条件，推广了文献［１］的光线传播理论，文中以一特定梯度折射率棒为例，讨论了高斯光束在棒中的传播特性。     

离子束增强沉积薄膜合成及其在材料表面优化中的应用

作者在多年实验工作的基础上，论述了离子束增强沉积薄膜合成及其在材料表面优化中的应用、所用设备、膜的合成、表面优化技术与机理，并展望了前景。     

微波电子回旋共振等离子体技术及其应用

微波电子回旋共振等离子体是淀积薄膜、微细加工和材料表面改性的一种重要手段。由于这种等离子体电离水平高,化学活性好,可以用来实现基片上薄膜的室温化学气相淀积和反应离子刻蚀,因此对于微电子学、光电子学和薄膜传感器件的发展,这种等离子体会具有重要的意义。此外,采用微波电子回旋共振等离子体原理,没有灯丝的离子源可以提高离子源的使用寿命,可以增加离子束的束流密度。可以确信,微波电子回旋共振等离子体的发展,将把离子源技术提高到一个新的水平。显然,这必将对材料表面改性工艺,包括离子注入掺杂等工艺的发展发挥作用。自从1985年以来,为了得到大容积等离子体而发展了微波电子回旋共振多磁极等离子体,这些技术在薄膜技术、微细加工以及材料表面改性中的应用前景是乐观的。我们将在本文中,介绍微波电子回旋共振等离子体的原理及其应用。     

基于DFT插值的宽带波束形成器设计

本文提出一种基于DFT插值的宽带波束形成器设计方法。首先推导了具有频率不变波束图的连续线阵的灵敏度函数与离散线列阵加权系数之间的关系；接着给出了基于DFT插值的宽带波束形成器设计的两个步骤：（1）使用窄带波束形成器的设计方法计算在参考频率下基阵的加权系数；（2）根据参考频率下基阵的权系数与其它子带权系数之间的关系，利用DFT插值的方法求出其它子带的加权系数。最后，给出了一个设计实例说明本文方法的有效性。     

Defects in molecular beam epitaxial GaAs grown at low temperatures

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.     

High uniformity of Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures grown by molecular beam epitaxy on 3″ GaAs substrates

Al_0.3Ga_0.7As/ln_0.15Ga_0.85As doped-channel structures were grown by molecular beam epitaxy on 3″ GaAs substrates. The uniformities of electrical and optical properties across a 3″ wafer were evaluated. A maximum 10% variation of sheet charge density and Hall mobility was achieved for this doped-channel structure. A1 μm long gate field-effect transistor (FET) built on this layer demonstrated a peak transconductance of 350 mS/mm with a current density of 470 mA/mm. Compared to the high electron mobility transistors, this doped-channel FET provides a higher current density and higher breakdown voltage, which is very suitable for high-power microwave device applications.     

Investigation of iodine as a donor in MBE grown Hg1−xCdxTe

N-type Hg_1−xCd_xTe layers with x values of 0.3 and 0.7 have been grown by molecular beam epitaxy using iodine in the form of CdI₂ as a dopant. Carrier concentrations up to 1.1 × 10¹⁸ cm⁻³ have been achieved for x = 0.7 and up to 7.6 × 10¹⁷ cm⁻³ for x=0.3. The best low temperature mobilities are 460 cm²/(Vs) and 1.2 × 10⁵ cm²/(Vs) for x=0.7 and x=0.3, respectively. Using CdI₂ as the dopant modulation doped HgTe quantum well structures have been grown. These structures display very pronounced Shubnikov-de Haas oscillations and quantum Hall plateaus. Electron densities in the 2D electron gas in the HgTe quantum well could be varied from 1.9 × 10¹¹ cm⁻² up to 1.4 × 10¹² cm⁻² by adjusting the thicknesses of the spacer and doped layer. Typical mobilities of the 2D electron gas are of the order of 5.0 × 10⁴ cm²/(Vs) with the highest value being 7.8 × 10⁴ cm²/(Vs).