ZK60镁合金表面滚压强化试验研究

试验研究了ZK60镁合金表面滚压加工中工艺参数对试件表面粗糙度、表面形貌、表面残余应力和表层显微硬度的影响,结果表明滚压力和重复滚压次数对试件的表面粗糙度、表面形貌以及表面残余应力和表层硬度影响程度较大,滚压速度影响较小。对精车ZK60镁合金试件进行滚压加工,试件表面粗糙度R a、R z最大减小了50.3%和48.1%;残余压应力最大可达-54.55 MPa;显微硬度从试件表层到内部基体材料逐渐降低,表层硬度值最大为92.83 HV 0.25,比基体材料硬度提高了15.32%。     

Corrosion behaviour of AA2024 aluminium alloy in different tempers in NaCl solution and with the CeCl3 corrosion inhibitor

The paper analyses the corrosion behaviour of naturally and artificially aged AA2024 alloy in NaCl solution and in the presence of an environment-friendly corrosion inhibitor, CeCl₃. On the basis of the values of polarisation resistance and corrosion current density, the corrosion resistance of the protective inhibitor film is established as well as the general corrosion resistance of this aluminium alloy. Resistance to pit formation is determined based on the difference in pitting and corrosion potentials while resistance to pit growth is determined based on the amount of charge consumed during pit growth. A scanning electron microscope is used to examine the morphology of the pits formed during the pitting corrosion testing, as well as to determine the cerium content on intermetallic particles and the matrix AA2024 alloy. The corrosion behaviour of AA2024 alloy is investigated after different test periods in NaCl solution and in the same solution with the CeCl₃ inhibitor. The corrosion resistance of both tempers of AA2024 alloy is more than one order of magnitude higher in the presence of CeCl₃. An explanation of the observed differences in the corrosion behaviour of the naturally and artificially aged AA2024 alloy is proposed. Different corrosion behaviour of the alloy after different test periods is also explained.     

雕刻技术的研制和应用

在对铝合金铸件进行X射线实时探伤时，由于采集回来的许多图像的目标物体的轮廓比较模糊，这样在评片时容易造成对铸件的误判和漏判。针对这种现象并结合这类图像噪声源多的特点，在研究常用卷积算法的基础上，采用特殊卷积（特殊的卷积核）操作，同时根据雕刻的艺术底色为灰色，最后给卷积结果加上灰度值128，实验结果表明图像中目标物体的轮廓变得更清楚，同时处理后的图像具有比较好的三维效果，这给工作人员在看图时带来了方便。     

Microstructures and Phase Transition Points of As-Cast Mg-Zn-Y System Alloys

As-east mierostruetures and their distribution of Mg-Zn-Y ternary alloy with high magnesium, low zinc and yttrium were examined using Nikon Epiphot optical microscopy （OM）, RigakuD/max-3C X- ray diffraetion （XRD）, and JEOL JSM-6700F scanning electron microscopy （SEM） equipped with an energydispersive X-ray spectroscopy （EDS）. In the as-east mierostructures, Yttrium and zinc tend to segregate at grain boundaries,     

低水分抗热震高铝可塑料在加热炉上的应用

用矾土作为主原料,选择适当结合剂和添加剂,引入微粉技术,采用真空炼泥等工艺手段,研制成低水分抗热震高铝可塑料。该制品用作热媒加热炉衬里,显示出良好的耐高温和耐热冲击性能。     

固体铝电解电容器用导电高分子制备工艺进展

依据近年的相关专利,综述了用于固体铝电解电容器的导电高分子的最新制备工艺,介绍了导电高分子固体铝电解电容器的结构,详细描述了制备导电高分子的两种主要方法——化学聚合和电化学聚合——及其进展历程。介绍了新颖掺杂剂的发现与使用,对各种工艺的特点进行了评述。     

Oxidation of Hastelloy-XR Alloy for Corrosion-Resistant Glass-Coating

The oxidation behavior of Hastelloy-XR alloy was investigated to obtain the optimum surface condition for corrosion-resistant glass-coatings. The surface morphology of oxide scales changed significantly with variation of temperatureand oxygen partial pressure (po2 ). The oxidation kinetics was mainly parabolic independent of oxidation conditions.The oxide scales were consisted of inner Cr2O3 and outer spinel layers. The phase component of spinel layers wereMn1.5Cr1.5O4 and (Mn,Ni)(Cr,Fe)2O4 for the oxygen partial pressures po2<10 kPa and po2>10 kPa, respectively.The optimum oxidation condition to obtain an oxide scale for well-adhered glass-coating to the substrate was 1248 Kand po2 =0.01 kPa for the oxidation time of 43 ks.     

噻吩在镍基非晶态合金上的吸附和脱附

应用静态吸附、动态吸附、程序升温脱附和程序升温还原等实验方法，考察了噻吩在Ni基非晶态合金上的吸附和脱附行为。常温下，噻吩分子首先吸附在清洁的Ni表面，并立刻被活化，发生氢解反应，C-S键断裂，释放出烃类部分，S留在Ni原子上。噻吩可以在Ni基非晶态合金表面发生强度不同的化学吸附。弱化学吸附的噻吩可以脱附；强化学吸附的噻吩不会脱附，而在高温下发生氢解反应。     

不锈钢管道坡口加工的新方法

对于不锈钢管及合金钢管坡口的加工,采用以往的加工方法切割出来的坡口一般参差不平、比较粗糙,难于打磨平整。使用LGK空气等离子切割机和磁力管道切割机的组合加上一定的辅助手段,改善了不锈钢管及合金钢管的坡口加工效果,使加工出来的坡口像碳钢管一样平整,更加容易打磨组焊。文章介绍了这一新方法所用的设备、材料、切割原理以及操作过程。     

Improving narrow bandgap a-SiGe:H alloys grown by hot-wire chemical vapor deposition

We have improved the electronic properties of narrow-bandgap (Tauc gap below 1.5 eV) amorphous-silicon germanium alloys (a-SiGe:H) grown by hot-wire chemical vapor deposition (HWCVD) by lowering the substrate temperature and deposition rate. Prior to this work, we were unable to grow a-SiGe:H alloys with bandgaps below 1.5 eV that had photo-to-dark conductivity ratios comparable with our plasma-enhanced CVD (PECVD) grown materials [B.P. Nelson et al., Mater. Res. Soc. Symp. 507 (1998) 447]. Decreasing the filament diameter from our standard configuration of 0.5 mm to 0.38 or 0.25 mm provides first big improvements in the photoresponse of these alloys. Lowering the substrate temperature from our previous optimal temperatures (T_sub starting at 435 °C) to at 250 °C provides additional photo-to-dark conductivity ratio increasing by two orders of magnitude for growth conditions containing 20–30% GeH₄ in the gas phase (relative to the total GeH₄+SiH₄ flow).