Development of Cu particles and Cu core-shell particles reinforced Al composite

Copper particles were incorporated and retained in elemental state in an aluminium matrix by friction stir processing thereby producing a non-equilibrium particulate composite. The processed Al–Cu_p composite exhibited improved strength with significantly high ductility. The composite was stable up to a temperature of more than 300°C. Thermal exposure at 350°C for more than 10 min led to diffusion of Cu atoms into the Al matrix forming a core-shell type structure in the Cu particles and thus producing an Al–Cu core-shell composite. The shell consists of multiple layers, the thickness of which was controllable.     

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

We have grown indium oxide thin films on silicon substrates at low temperature by metal organic chemical vapor deposition. Polycrystalline film growth could only be obtained at temperatures below 400 °C. Above 400 °C, metallic indium deposition dominated. We have investigated the effect of substrate temperature and reactor pressure on the film growth and structural properties in the range of 250-350 °C and 5 ^? 10³-4 ^? 10⁴ Pa. The film grown at 300 °C exhibited a resistivity of about 3.6 × 10^− 3 Ω cm and a maximal optical transmittance of more than 95% in the visible range. The film showed an optical band gap of about 3.6 eV.     

Challenges in Atomic-Scale Characterization of High-k Dielectrics and Metal Gate Electrodes for Advanced CMOS Gate Stacks

The decreasing feature sizes in complementary metal-oxide semiconductor (CMOS) transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant (high-k) because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability.In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology.Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties.It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling.In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices.Therefore, detailed atomicscale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks,are highly required.In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed.Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy (HRTEM) and the related techniques based on scanning transmission electron microscopy (STEM), including high-angle annular darkfield (HAADF) imaging (also known as Z-contrast imaging), electron energy-loss spectroscopy (EELS), and energy dispersive X-ray spectroscopy (EDS), due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices.In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics.In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed.The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4.Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.     

Surface-effect on detection ability of fluorescent Eu(btc) metal-organic frameworks to metal ions

Eu(btc)metal organic frameworks(MOFs)were prepared by co-precipitation method via 1,2,4-benzenetricarboxylic acids(H3btc)connecting with Eu³⁺ions,and the morphology was controlled from compact spherical to irregular honeycomb by adjusting the pH of reaction solutions.The luminescence properties of Eu(btc)MOFs are found to be related to the surface morphology of products,and the compact spherical one performs stronger emission intensity.The sensing ability of Eu(btc)MOFs to 11 kinds of metal ions was investigated and a prominent quenching effect occurrs in Fe³⁺,or Ni²⁺solutions.Based on UV—vis absorption analysis,an“ion-fence”model presents the competition to absorb exciting light between Eu(btc)MOFs and adsorbed metal ions.Based on Stern-Volmer equation,the Eu(btc)detection is found with higher Ksv value and a lower detection limit.Meanwhile,a higher sensing efficiency is confirmed in the Eu(btc)MOFs with loose honeycomb due to aggravating porous surface offering much more sites for metal ions.     

Comparison of modified injection molding and conventional machining in biodegradable behavior of perforated cannulated magnesium hip stents

In this study,perforated cannulated magnesium(Mg)hip stents were fabricated via modified Mg injection molding and conventional machining,respectively.Additionally,the stent canal was filled with paraffin to simulate injection of biomaterials.The microstructure,mechanical performance,corrosion behavior,and biocompatibility were comparably studied.Scanning electron microscopy(SEM)and energy dispersive spectroscopy(EDS)showed higher affinity of interstitial element such as oxygen and carbon as consequences of routine molding process.After immersion in SBF,machining stents showed reduced degradation rate and increased deposition of calcium phosphate compared to molding stents.Corrosion resistance was improved via paraffin-filling.Consistently,the hemolysis and in vitro osteoblast cell culture models showed favourable biocompatibility in machining stents compared to molding ones,which was improved by paraffin-filling treatment as well.These results implied that the feasibility of the prepared machining stents as the potential in vivo orthopaedic application where slower degradation is required,which could be enhanced by designing canal-filling injection of biomaterials as well.     

Correlation investigation between contact approach speed of handheld metal rod and discharge parameters from charged human body

Characteristic measurement of contact discharge currents are made through a hand-held metal rod from charged human body. Correlation coefficients are obtained, through Statistic Package for Social Science （SPSS）, for various charge voltages, which is based on the effect test of electrode contact approach speeds on discharge current parameters of current peaks, maximum rising slope and spark lengths. Discharge parameters at charge voltage 300V are independent on approach speed. For charge voltages equal to and higher than 500V, the contact approach speed has strong positive correlation with discharge parameters of the peak current and the maximum rising slope, whereas has strong negative correlation with the spark length.     

基于粗糙集和神经网络的信息融合方法

在运用粗糙集理论和神经网络理论进行信息融合的基础上,分析了其各自的优势和存在的问题,设计了将两者综合的信息融合方法.该方法主要思想是利用粗糙集理论对神经网络待处理的数据进行属性约简,借此来简化神经网络的结构.利用这种方法对煤矿中各种与瓦斯危险相关的信息进行融合,以此对其瓦斯安全性进行评价.结果表明,这种方法减少了训练次数而且收敛效果比传统神经网络效果好.     

贮氢合金组成对电极性能的影响

本文研究了混合稀土MmBx贮氢合金B组分的钴含量和Mm(Ni_(0.70)Co_(0.16)Mn_(0.08)Al_(0.06))_x的配比数x对P-C-T曲线平衡氢压、放电容量和电池的循环使用寿命的影响。     

某扫雷犁系统GA-BP神经网络建模

利用AMESim和MATLAB／Simulink联合仿真,建立某扫雷犁电液伺服系统的模型,在此基础上研究了GA—BP神经网络的辨识问题,对此非线性系统进行离线辨识实验,实验结果验证了该建模方法的有效性。     

新疆高温差地区750kV电抗器用金属波纹式储油柜选型及T/H曲线矫正计算

在介绍750kV金属波纹管内油式储油柜结构和原理的基础上,分析了新疆地区某750kV变电站高压并联电抗器所使用的金属波纹式储油柜在高温差环境下油位变化规律和加补充油工作存在的问题,论证了储油柜选型的正确性,矫正了储油柜油位温度曲线,并提出了运行维护建议。