固体润滑涂层的评价和使用

本文主要介绍了二硫化钼，石墨、聚四氟乙烯三种固体润滑涂层的特点以及润滑涂层摩擦磨损性能的评价手段和方法，以及台架试验和应用实例，提出了选用方法和步骤。     

Studies on spray pyrolyzed molybdenum trioxide thin films

Semiconducting molybdenum trioxide thin films have been prepared by employing simple and inexpensive spray pyrolysis technique. Films are found to be polycrystalline in nature with hexagonal phase. Optical band gap energy (direct) and room temperature electrical resistivity are of the order of 2·9 eV and 10⁸ ohm-cm, respectively. These films exhibit cathodic electrochromism.     

Very Long SiC‐Based Coaxial Nanocables with Tunable Chemical Composition

We present a simple process for the fabrication of very long SiC‐based coaxial nanocables (NCs). The versatility of this technique is confirmed by the ability to change the chemical composition of the NC outer layers from silica to carbon and boron nitride. The NCs consist of a SiC core approximately 30 nm in diameter with lengths up to several hundred of nanometers. The thickness of the coating is in the range 2–10 nm. The morphology and structural characterization of the NCs is investigated by scanning electron microscopy (SEM) and high‐resolution transmission electron microscopy (HRTEM), respectively, and their chemical composition is probed by electron energy loss spectroscopy (EELS). A vapor–solid growth mechanism is proposed to explain the growth of SiC‐based NCs of various chemical compositions, depending on the chemical nature of the vapor phase. Because of the large quantity of very long and interlaced NCs produced during the synthesis, the macroscopic aspect of the as‐grown material is like a self‐supported felt.     

Characterization of thick epitaxial silicon detectors from different producers after proton irradiation

Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of thick EPI silicon diodes irradiated with protons up to a fluence of has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV/IV characterizations. The aim of the work was to investigate the impact of radiation damage as well as the influence of the wafer processing on the material performance by comparing diodes from different manufacturers. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. While the generation of leakage current due to irradiation is similar in all investigated series of detectors, a difference in the effective doping concentration can be observed after irradiation. In the CCE measurements an anomalous drop in performance was found even for diodes exposed to very low fluences in all measured series. This result was confirmed for one series of diodes in TCT measurements with an infrared laser. TCT measurements with a red laser showed no type inversion up to fluences of for n-type devices whereas p-type diodes undergo type inversion from p- to n-type for fluences higher than .     

硅微板条谐振式传感器谐振频率分析及计算

对硅微机械谐振式传感器的谐振频率计算提出了新的物理模型—两端固支薄板条模型，该模型不同于常说的硅桥（梁）或硅弦模型。计算结果表明该模型更符合实际，优于有关文献结果。     

Chemical-mechanical polishing of SiO2 thin films studied by X-ray reflectivity

Specular X-ray reflectivity from SiO₂ thin films prepared on silicon substrates by plasma-enhanced chemical vapor deposition showed the films to have a characteristic width of the decay in density at the free surface of 17 Å, to be about three-quarters the density of -quartz, and to have an interfacial layer at the silicon interface that was of the order of 100 Å wide and less dense than the bulk of the film. After chemical-mechanical polishing the characteristic width of the decay in density at the free surface was reduced to 10 Å; furthermore, the near-surface region to a depth of 30 Å had a greater density than the as-deposited film. Off-specular reflectivity confirmed that the decrease in characteristic width at the free surface was due to reduced roughness upon polishing and also revealed that the lateral correlation length in the limit of long wavelengths was the same for both polished and unpolished samples. The compression of the near-surface region during polishing is believed to enhance the dissolution of SiO₂ into the slurry which is necessary to achieve smooth surfaces.     

多孔硅（PS）制备新方法

介绍了两种制备多孔硅的方法：电火花刻蚀法和激光辐射腐蚀法。讨论了这两种新方法制备的多孔硅样品的结构和发光特性，同时，与电化学法制备的多孔硅的结构和发光特性进行了比较。最后指出这两种新方法对于多孔硅形成机理和发光机制研究是有所帮助的。     

多孔硅发光的物理机制——纳米量子限制效应及表面态在发光中的作用

采用阳极氧化腐蚀的方法制备了多孔硅（ＰＳ），这种ＰＳ的微结构为纳米量级的，并具有光致发光特性，这无疑将对全硅光电子学的发展具有很大意义。根据大量实验与理论分析，提出了这种ＰＳ发光的物理机制：纳米量子限制效应和表面态及其物质在发光中的作用，从量子力学的薛定锷方程出发，用沟道势阱的近似模型，推导得到进入量子线的电子和空穴的能量势垒，ＰＳ的有效带宽Ｅ＝Ｅ＿０＋ΔＥ，对于Ｓｉ（Ｅ＿０＝１．１２ｅｖ）。完美地解释了目前在ＰＳ研究中的ＰＬ谱的篮移现象。     

LSI/VLSI中缺陷、杂质与器件性能的关系

结合器件工艺的失效分析,评述了硅中缺陷和氧、碳、金属杂质与器件性能、器件工艺之间的相互关系。指出:杂质和缺陷对器件的性能、成品率和可靠性有严重的影响,尤其经金属杂质缀饰的缺陷对器件的危害更大。对硅中某些杂质和缺陷的最新研究进展作了介绍。     

Si3N4陶瓷材料高温氧化层的分析

利用ＸＲＤ，ＥＰＭＡ，ＸＰＳ和ＳＥＭ的分析方法，研究了在１３００℃下氧化后Ｓｉ３Ｎ４陶瓷材料表面氧化层的组成的形貌，结果表明，Ｓｉ３Ｎ４陶瓷材料的表面氧化层是由方石英相和含有Ａｌ２Ｏ３，ＣａＯ等杂质的ＳｉＯ２质玻璃相所组成，其中ＳｉＯ２玻璃相听Ａｌ２Ｏ３，ＣａＯ等杂质的含量随氧化时间的增加而逐渐增加，同时在氧化层的内部都还存在部分Ｓｉ２Ｎ２Ｏ相。