掺硼非晶硅薄膜的微结构和电学性能研究

以硅烷(SiH4)和硼烷(B2H6)为气相反应先驱体，采用等离子体增强化学气相沉积法，(PECVD)制备出能应用于液晶光阀光导层的硼掺杂非晶氢硅薄膜。X射线衍射、原子力显微镜和光、暗电导测试表明，一定程度的硼掺杂提高了非晶氢硅薄膜的电导率、降低了非晶氢硅薄膜的光、暗电导比；硼掺杂促进薄膜晶态率的增加和硅晶粒尺寸的增大，薄膜的结晶状态将逐渐从非晶硅过渡到纳米硅，最后发展为多晶硅。红外吸收谱研究表明了大量的硼原子与硅、氢原子之间能形成某些形式的复合体，仅有少量硼元素对受主掺杂有贡献。     

The aligned Si nanowires growth using MW plasma enhanced CVD

New and simple modification of vapor-liquid-solid process for Si nanowires growth based on microwave plasma enhanced chemical vapor deposition that uses solid-state Si target as a source of Si atoms was developed. The method was temperature and pressure controlled evaporation of solid phase of Si source in hydrogen microwave plasma. Aligned growth of Si nanowires was performed in local electric field by applying of constant negative bias to substrate holder. Deposited Si nanowires were studied by scanning electron microscopy (SEM), Raman and photoluminescence spectroscopy. Correlation between photoluminescence spectra and Si nanowires properties were studied.     

减少氮、磷流失的多目标控制排水模型

运用多目标决策技术,减少农田排水氮、磷输出,保持适宜作物生长的土壤含水量,探讨地表控制排水的控制时间。通过田间试验和SPSS回归模拟,应用均值土壤一维垂直入渗Philip公式计算累计入渗量,研究田间尺度降雨排水中氮、磷浓度的变化规律,拟合控制排水氮、磷浓度对数函数模拟方程。建立减少氮、磷流失和排涝、除渍的多目标控制排水模型,提出求解模型的非劣解和均衡解的方法。     

Irradiation of large area Mylar membrane and characterization of nuclear track filter

Ion irradiation of Si⁸⁺ ion beam of 100 MeV was scattered by a gold foil on a Mylar membrane of 25 Μm thickness in the form of film roll (width, 12.5 cm and length, 400 cm) at the Nuclear Science Centre, New Delhi. The characterization of etched nuclear tracks was carried out by gas permeation measurements. The samples cut from the film roll of required size for permeability measurements were etched in a controlled manner in a constant temperature bath of 6N NaOH solution. The opening of the conical etched tracks was characterized by hydrogen gas permeation.     

纯镁对碳化硼颗粒的常压浸渗

本文研究了纯镁对不同致密度的碳化硼(B₄C)颗粒基片的常压浸渗性;讨论了镁液对B₄C颗粒聚集体常压浸渗的影响因素;提出了浸渗模型。研究表明,纯镁在氩气保护下,800～850℃温度范围保温30min即可浸渗B₄C颗粒聚集体。浸渗深度和宽度随加热温度升高和保温时间延长而增加;常压浸渗的B₄C_P/Mg复合材料具有很高的硬度,B₄C颗粒在基体中分布较均匀。     

A new bubble-point-pressure correlation for the binary LiBr/H2O solution

In accord with the increasing concern about the global environmental issues, the absorption refrigeration heat-pump systems are currently being considered very promising and attractive. For the purpose of supporting the advanced R&D technology in this area, we have developed a novel correlation to represent the bubble-point pressures of LiBr H₂O solutions. The developed correlation covers the most extensive range of validity ever proposed: 273–483 K for temperatures, 0.05 kPa to 1.0 MPa for pressures. and 29 76 wt% LiBr for concentrations.Paper presented at the Twelfth Symposium on Thermophysical Properties, June 19–24, 1994. Boulder, Colorado, U.S.A.     

The process window for diamond deposition from the vapor phase with sulfur in the C–H–O feed gas mixtures

Theoretical predictions using a modified radical species ternary diagram for C–H–O system indicate that addition of sulfur expands the C–H–O gas phase compositional window for diamond deposition. Sulfur addition to no-growth domain increases the carbon super-saturation by binding the oxygen and the addition of sulfur to the non-diamond domain reduces the heavy carbon super-saturation by decreasing C_nH_m species concentration in the gas phase. The overall effect of sulfur addition to gas phase mixtures is characterized as that of oxygen addition to the C–H system, i.e. expansion of the compositional window over which diamond can be deposited from the gas phase. In addition, the increasing sulfur concentration to diamond domain feed gases beyond 2000 ppm did not affect the steady state gas phase composition but the quality of diamond was reduced.     

PVT Measurements on tetrafluoroethane (R134a) along the vapor-liquid equilibrium boundary between 288 and 373 K and in the liquid state from the triple point to 265 K

For the investigations of the gas-liquid phase equilibria, a new apparatus has been developed capable of simultaneously determining the pressure and the liquid and vapor densities using Archimedes' principle. The relative measurement uncertainties of the liquid and vapor densities of R134a (purity, 99.999%) at 313 K are 2×10^–4 and 7×10^–4, respectively (95% confidence level). For the measurements in the liquid region along nine quasi-isochores at pressures up to 5 MPa, an isochoric apparatus was used. The relative measurement uncertainty ofpv/(RT) is less than 1×10^–3. In addition to the investigation of the (p, v, T) properties, the temperature and pressure at the triple point and the vapor pressure between the triple point and 265 K were measured. On the basis of these data, a vapor pressure correlation has been developed that reproduces the measured vapor pressures within the uncertainty of measurement. The results of our measurements are compared with a fundamental equation for R134a, which is based on the measurements of other research groups.Paper presented at the Twelfth Symposium on Thermophysical Properties, June 19–24, 1994, Boulder, Colorado, U.S.A.     

聚氨酯干法涂层的应用

介绍了涂层织物的特点及聚氨酯在涂层整理中的作用,并对干法直接涂层工艺进行了探讨.