Ideal-gas thermodynamic properties for natural-gas applications

Calculating caloric properties from a thermal equation of state requires information such as isobaric heat capacities in the ideal-gas state as a function of temperature. In this work, values for the parameters of thec _p ⁰ correlation proposed by Aly and Lee were newly determined for 21 pure gases which are compounds of natural gas mixtures. The values of the parameters were adjusted to selectedc _p ⁰ data calculated from spectroscopic data for temperatures ranging from 10 to 1000 K. The data sources used are discussed and compared with literature data deduced from theoretic models and caloric measurements. The parameters presented will be applied in a current GERG project for evaluating equations of state (e.g., the AGA 8 equation) for their suitability for calculating caloric properties.     

油气勘探开发投资绩效评价的指标选择探讨

从油气勘探、开发投资的特性出发,正确选择投资绩效评价指标,是保证评价科学性以及进行中外对比研究的前提条件。     

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本文根据四川天然气产能建设多年的实践,分析了产能建设的特点和存在问题,着重强调了当前搞好产能建设应注意的几个问题,供决策和工作参考。     

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本文针对天然气井提高钻井速度问题,总结分析了盆地中部井身结构,水力、机械参数,聚合物钻井液,正注反挤固井等工艺技术对该地区钻速的影响。指出提高天然气井钻井速度,必须搞好系统工程,形成配套技术。     

双相不锈钢焊接技术状况

双相不锈钢具有优异的综合性能，应用范围广，其焊接技术独具特点，受到特别关注。本文论述了双相不锈钢焊接的基本原则，焊丝、保护气体及焊接参数的选择等。     

关于供排水管网的水力计算和校核

以往对电站技术供排水系统大都未进行水力平差计算，致使一些实际电站的供排水系统达不到预期的效果，甚至影响机组的正常运行。据此，给出了供排水管网的平差计算方法，有利于正确评估电站管网，另外，提出了管网校核应注意的问题。     

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本文提供了计算凝析油当量气体体积的方法，并用于凝析气藏的凝析油含量，凝析油和干气地质储量的计算。     

储层识别模式的研究

用数学方法建立气测井油气储层识别模式,以解决录井中实时软件在判别依据少的条件下,及时识别油气显示假异常的难题。该判别式经实用,正到率达90％。     

黄土塬区天然气地震技术和综合解释

黄土塬区复杂的地表条件难以获得可供解释的物探资料,本文给出了勘探天然气的地震技术,在野外弯线地震数据采集中,冲沟区运用了弯线高分辨率技术;塬上区采用非纵测线和地震测深观测系统,大药量、深井和强化组合法的接收条件。初步解决了弯线地震资料处理中二维滤波、静校正、速度分析等技术难题。摸索出一套以地震为骨架,构造解释与岩性解释相结合,重力-电法-地震联合解释落实古生界天然气构造圈闭的综合物探解释技术,并以实例展示方法的有效性。     

Formation of uniform GaAs multi-atomic steps with 20–30 nm periodicity and related structures on vicinal (111)B planes by MBE

We studied morphology of GaAs surfaces and the transport properties of two-dimensional electron gas (2DEG) on vicinal (111)B planes. Multi-atomic steps (MASs) are found on the vicinal (111)B facet grown by molecular beam epitaxy, which will affect electron transport on the facet. We also studied how the morphology of GaAs epilayers on vicinal (111)B substrates depends on growth conditions, especially on the As₄ flux. The uniformity of MASs on the substrates have been improved and smooth surfaces were obtained when the GaAs was grown with high As₄ flux, providing step periodicity of 20 nm. The channel resistance of the 2DEG perpendicular to the MASs is reduced drastically with this smooth morphology. These findings are valuable not only for fabricating quantum devices on the (111)B facets but also those on the vicinal (111)B substrates.