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51.
Simultaneous polymerization and doping of pyrrole have been carried out in the presence of a halogenic electron acceptor, bromine (Br2) or iodine (I2), in aqueous dispersion or in a two-phase solvent system. The morphology of the polypyrrole (PPY) so produced is granular and porous. The electrical conductivity of the PPY-I2 charge transfer (CT) complex is of the order of 101 ohm−1 cm−1 while that of the PPY-Br2 complex is about one order of magnitude less. Both complexes are stable in the atmosphere. The physicochemical properties of the PPY-I2 and PPY-Br2 CT complexes prepared under various experimental conditions are examined in detail. 相似文献
52.
本文对氧化非晶硅磷掺杂的工艺条件进行了研究,得出掺磷氢化非晶硅的电导率随衬底温度、气体流量、气体压力、射频功率、淀积时间的变化关系,为非晶硅的有效掺杂和器件研究提供了依据。 相似文献
53.
K. Yasuda Y. Tomita Y. Masuda T. Ishiguro Y. Kawauchi H. Morishita Y. Agata 《Journal of Electronic Materials》2002,31(7):785-790
Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride
(DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped
layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher
electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth
temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×1016 cm−3 to 2.6×1018 cm−3. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms
for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors.
Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing
the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger
for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and
to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface
also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth
temperature. 相似文献
54.
F. Goschenhofer J. Gerschütz A. Pfeuffer-Jeschke R. Hellmig C. R. Becker G. Landwehr 《Journal of Electronic Materials》1998,27(6):532-535
N-type Hg1−xCdxTe layers with x values of 0.3 and 0.7 have been grown by molecular beam epitaxy using iodine in the form of CdI2 as a dopant. Carrier concentrations up to 1.1 × 1018 cm−3 have been achieved for x = 0.7 and up to 7.6 × 1017 cm−3 for x=0.3. The best low temperature mobilities are 460 cm2/(Vs) and 1.2 × 105 cm2/(Vs) for x=0.7 and x=0.3, respectively. Using CdI2 as the dopant modulation doped HgTe quantum well structures have been grown. These structures display very pronounced Shubnikov-de
Haas oscillations and quantum Hall plateaus. Electron densities in the 2D electron gas in the HgTe quantum well could be varied
from 1.9 × 1011 cm−2 up to 1.4 × 1012 cm−2 by adjusting the thicknesses of the spacer and doped layer. Typical mobilities of the 2D electron gas are of the order of
5.0 × 104 cm2/(Vs) with the highest value being 7.8 × 104 cm2/(Vs). 相似文献
55.
56.
Co^3+—modified Surface of LiMn2O4 Spinel for its Improvementof Electrochemical Properties 总被引:3,自引:0,他引:3
ZishanZHENG ZilongTANG ZhongtaiZHANG JunbiaoLU WanciSHEN 《材料科学技术学报》2003,19(4):359-362
Cobalt was used to modify the surface of spinel LiMn2O4 by a solution technique to produce Co^3 -modified surface material (COMSM). Cobalt was only doped into the surface of LiMn2O4 spinel. XPS(X-ray photoelectron spectroscopy) analysis confirms the valence state of Co^3 . COMSM has stable spinel structure and can prevent active materials from the corrosion of electrolyte. The ICP(inductively coupled plasma) determination of the spinel dissolution in electrolyte showed the content of Mn dissolved from COMSM was smaller than that from the pure spinel. AC impedance patterns show that the charge-transfer resistance (Rct) for COMSM is smaller than that for pure spinel. The particles of COMSM are bigger in size than those of pure spinel according to the micrographs of SEM(scanning electron microscopy). The determinations of the electrochemical characterization show that COMSM has both good cycling performance and high initial capacity of 124.1 mA/h at an average capacity loss of 0.19 mAh/g per cycle. 相似文献
57.
A.A Ramadan A Abd-El MongyI.S Ahmed Farag A.M El-ShabinyF.A Radwan H.I IsmailH.M Hashem 《Thin solid films》2003,423(2):146-152
CdTe films were prepared by physical vapour deposition on a substrate at room temperature (RT) as well as on a cold (LT) one using low deposition rate. The thickness-dependence of stoichiometry revealed an abrupt decrease in the Cd/Te ratio as the thickness increases. Change of thickness did not affect the type of observed (111) crystallographic texture, only the degree of preferred orientation is enhanced as the film grows. The internal strain was negligible while the crystallite size increased rapidly at small thickness (up to 400 nm), and less thickness dependence was observed with further film growth. However, thickness dependence of lattice parameters showed a minimum and a maximum at approximately 300 nm in the case of RT and LT, respectively. The observed change in conductivity from n- to p-type and its vital correlation with the stoichiometry and structural characteristics were presented. Based on thickness dependence of stoichiometry and lattice parameters as well as the conductivity type, formation and annihilation of lattice defects were considered. 相似文献
58.
Studies were made on the thermally stimulated discharge currents (TSDCs) in pure (undoped) and Fe-doped polystyrene films as a function of polarizing field, polarizing temperature and dopant concentration. While undoped films exhibited a single peak, doped films showed two peaks one at low temperatures and another at high temperatures. The low temperature peak, which exhibits a shift towards lower temperatures with increasing dopant concentration, is attributed to the relaxation of the main chain, while the high temperature peak, which shows a tendency to shift towards higher temperatures with dopant concentration, is due to space charge polarization. The TSDCs were higher for low dopant concentrations than their undoped counterparts, while for high concentrations of the dopant, the TSDCs decreased. Formation of charge transfer complexes at low dopant concentrations and molecular aggregates at higher dopant concentrations are suggested as the possible reasons for this behaviour. 相似文献
59.
Reply to Finley's (1987; see record 1988-00015-001) critique of rational-emotive philosophy, which claims that Ellis's (1981) response to Sharkey's (1981) criticisms of rational-emotive psychology reveals logical and philosophical confusion. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
60.
硅外延片中的杂质控制 总被引:2,自引:0,他引:2
有5类掺杂源影响硅的外延片中的杂质分布。主掺杂质控制外延层的杂质浓度,决定外延层的电阻率。固态外扩散、气相自掺杂和系统自掺杂影响衬底界面附近的外延层杂质浓度的深度分布。该文介绍了此3类掺杂源的掺杂过程和抑制方法。金属杂质在外延层中对器件有害,防止沾污和使用吸杂技术能降低金属杂质在外延层中的浓度。 相似文献