Sputtered Ir–Ru based catalysts for oxygen evolution reaction: Study of iridium effect on stability

Magnetron sputtered low-loading iridium-ruthenium thin films are investigated as catalysts for the Oxygen Evolution Reaction at the anode of the Proton Exchange Membrane Water Electrolyzer. Electrochemical performance of 50 nm thin catalysts (Ir pure, Ir–Ru 1:1, Ir–Ru 1:3, Ru pure) is tested in a Rotating Disk Electrode. Corresponding Tafel slopes are measured before and after the CV-based procedure to compare the activity and stability of prepared compounds. Calculated activities prior to the procedure confirm higher activity of ruthenium-containing catalysts (Ru pure > Ir–Ru 1:3 > Ir–Ru 1:1 > Ir pure). However, after the procedure a higher activity and less degradation of Ir–Ru 1:3 is observed, compared to Ir–Ru 1:1, i.e. the sample with a higher amount of unstable ruthenium performs better. This contradicts the expected behavior of the catalyst. The comprehensive chemical and structural analysis unravels that the stability of Ir–Ru 1:3 sample is connected to RuO₂ chemical state and hcp structure. Obtained results are confirmed by measuring current densities in a single cell.     

Morphological study of thin films: Simulation and experimental insights using horizontal visibility graph

We studied the morphological nature of various thin films such as silicon carbide (SiC), diamond (C), germanium (Ge), and gallium nitride (GaN) on silicon substrate Si(100) using the pulsed laser deposition (PLD) method and Monte Carlo simulation. We, for the first time, systematically employed the visibility algorithm graph to meticulously study the morphological features of various PLD grown thin films. These thin-film morphologies are investigated using random distribution, Gaussian distribution, patterned heights, etc. The nature of the interfacial height of individual surfaces is examined by a horizontal visibility graph (HVG). It demonstrates that the continuous interfacial height of the silicon carbide, diamond, germanium, and gallium nitride films are attributed to random distribution and Gaussian distribution in thin films. However, discrete peaks are obtained in the brush and step-like morphology of germanium thin films. Further, we have experimentally verified the morphological nature of simulated silicon carbide, diamond, germanium, and gallium nitride thin films were grown on Si(100) substrate by pulsed laser deposition (PLD) at elevated temperature. Various characterization techniques have been used to study the morphological, and electrical properties which confirmed the different nature of the deposited films on the Silicon substrate. Decent hysteresis behavior has been confirmed by current-voltage (IV) measurement in all the four deposited films. The highest current has been measured for GaN at ～60 nA and the lowest current in SiC at ～30 nA level which is quite low comparing with the expected signal level (μA). The HVG technique is suitable to understand surface features of thin films which are substantially advantageous for the energy devices, detectors, optoelectronic devices operating at high temperatures.     

Effects of the film thickness and poling electric field on photovoltaic performances of (Pb,La)(Zr,Ti)O3 ferroelectric thin film-based devices

The ferroelectric photovoltaic (FPV) effect obtained in inorganic perovskite ferroelectric materials has received much attention because of its large potential in preparing FPV devices with superior stability, high open-circuit voltage (V_oc) and large short-circuit current density (J_sc). In order to obtain suitable thickness for the ferroelectric thin film as light absorption layer, in which, the sunlight can be fully absorbed and the photo-generated electrons and holes are recombined as few as possible, we prepare Pb_0.93La_0.07(Zr_0.6Ti_0.4)_0.9825O₃ (PLZT) ferroelectric thin films with different layer numbers by the sol-gel method and based on these thin films, obtain FPV devices with FTO/PLZT/Au structure. By measuring photovoltaic properties, it is found that the device with 4 layer-PLZT thin film (~300 nm thickness) exhibits the largest V_oc and J_sc and the photovoltaic effect obviously depends on the value and direction of the poling electric field. When the device is applied a negative poling electric field, both the V_oc and J_sc are significantly higher than those of the device applied the positive poling electric field, due to the depolarization field resulting from the remnant polarization in the same direction with the built-in electric field induced by the Schottky barrier, and the higher the negative poling electric field, the larger the V_oc and J_sc. At a -333 kV/cm poling electric field, the FPV device exhibits the most superior photovoltaic properties with a V_oc of as high as 0.73 V and J_sc of as large as 2.11 μA/cm². This work opens a new way for developing ferroelectric photovoltaic devices with good properties.     

Multi-discharge EDM coring of single crystal SiC ingot by electrostatic induction feeding method

A new technique of EDM coring of single crystal silicon carbide (SiC) ingot was proposed in this paper. Currently single crystal SiC devices are still of high cost due to the high cost of bulk crystal SiC material and the difficulty in the fabrication process of SiC. In the manufacturing process of SiC ingot/wafer, localized cracks or defects occasionally occur due to thermal or mechanical causes resulted from fabrication processes which may waste the whole piece of material. To save the part of ingot without defects and maximize the material utilization, the authors proposed EDM coring method to cut out a no defect ingot from a larger diameter ingot which has localized defects. A special experimental setup was developed for EDM coring of SiC ingot in this study and its feasibility and machining performance were investigated. Meanwhile, in order to improve the machining rate, a novel multi-discharge EDM coring method by electrostatic induction feeding was established, which can realize multiple discharges in single pulse duration. Experimental results make it clear that EDM coring of SiC ingot can be carried out stably using the developed experimental setup. Taking advantage of the newly developed multi-discharge EDM method, both the machining speed and surface integrity can be improved.     

Blocked crystallization in capped ultrathin polymer films studied by molecular simulations

The crystallization of capped ultrathin polymer films is closely dependent on film thickness and interfacial interaction. Using dynamic Monte Carlo simulations, the crystallization behaviors of polymer films confined between two substrates were investigated. The crystallization rate of confined polymers is reduced with high interfacial interactions. Above a critical strength of interfacial interaction, polymer crystallization in the thin film is inhibited within the simulation time scales. An increase in film thickness leads to a rise in critical interfacial interaction. In thicker films, the chains have more space to change conformation to form crystal stems. In addition, there are fewer absorbed segments in confined chains for the thicker films, and thus the chains have stronger ability to adjust their conformation. Therefore an increase in film thickness can cause a reduction in the entropic barrier required for the formation of crystals and thus an increase in the critical interfacial interaction. © 2018 Society of Chemical Industry     

Deposition,opto-electronic and structural characterization of polymorphous silicon thin films to be applied in a solar cell structure

In this study we analyze the optoelectronic properties and structural characterization of hydrogenated polymorphous silicon thin films as a function of the deposition parameters. The films were grown by plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of argon (Ar), hydrogen (H₂) and dichlorosilane (SiH₂Cl₂). High-resolution transmission electron microscopy images and Raman measurements confirmed the existence of very different internal structures (crystalline fractions from 12% to 54%) depending on the growth parameters. Variations of as much as one order of magnitude were observed in both the photoconductivity and effective absorption coefficient between the samples deposited with different dichlorosilane/hydrogen flow rate ratios. The optical and transport properties of these films depend strongly on their structural characteristics, in particular the average size and densities of silicon nanocrystals embedded in the amorphous silicon matrix. From these results we propose an intrinsic polymorphous silicon bandgap grading thin film to be applied in a p–i–n junction solar cell structure. The different parts of the solar cell structure were proposed based on the experimental optoelectronic properties of the pm-Si:H thin films studied in this work.     

Structural and optical properties of CdTe-nanocrystals thin films grown by chemical synthesis

By mans of a chemical synthesis technique stoichiometric CdTe-nanocrystals thin films were prepared on glass substrates at 70 °C. First, Cd(OH)₂ films were deposited on glass substrates, then these films were immersed in a growing solution prepared by dissolution of Te in hydroxymethane sulfinic acid to obtain CdTe. The structural analysis indicates that CdTe thin films have a zinc-blende structure. The average nanocrystal size was 19.4 nm and the thickness of the films 170 nm. The Raman characterization shows the presence of the longitudinal optical mode and their second order mode, which indicates a good crystalline quality. The optical transmittance was less than 5% in the visible region (400–700 nm). The compositional characterization indicates that CdTe films grew with Te excess.     

Rectangular Section Control Technology for Silicon Steel Rolling

Rectangular section control technology(RSCT)was introduced to achieve high-precision profile control during silicon steel rolling.The RSCT principle and method were designed,and the whole RSCT control strategy was developed.Specifically,RSCT included roll contour design,rolling technology optimization,and control strategy development,aiming at both hot strip mills(HSMs)and cold strip mills(CSMs).Firstly,through the high-performance variable crown(HVC)work roll optimization design in the upper-stream stands and the limited shifting technology for schedule-free rolling in the downstream stands of HSMs,a hot strip with a stable crown and limited wedge,local spot,and single wave was obtained,which was suitable for cold rolling.Secondly,an approximately rectangular section was obtained by edge varying contact(EVC)work roll contour design,edge-drop setting control,and closed loop control in the upper-stream stands of CSMs.Moreover,complex-mode flatness control was realized by coordinating multiple shape-control methods in the downstream stands of CSMs.In addition,the RSCT approach was applied in several silicon-steel production plants,where an outstanding performance and remarkable economic benefits were observed.     

川西彭州地区雷口坡组潮坪相薄储层辨识机理研究

川西彭州地区三叠系雷口坡组雷四上亚段潮坪相薄储层识别难度极大。围绕如何从复合地震强反射中区分并识别上、下两套储层面临的地球物理难题,采用先“分”后“合”的研究思路,基于实际地层结构及不同储层叠加样式建立正演模型,利用全波场波动方程正演模拟技术,剖析了不同主频条件下薄储层的地震响应特征,通过波形差异化分析,从复合地震响应中“剥离”出了两套储层所引起的地震响应特征及变化规律,明确了两套储层在不同频带下的地震识别标志和识别方法,为该区强反射界面干扰下两套薄互层储层辨识机理分析及精准预测奠定了基础。基于不同频带下薄储层辨识机理的分析结果,定性预测了薄储层平面展布,提出了深层潮坪相薄储层识别和预测难题的解决方案,为该区地震资料品质评价、面向薄储层的地震采集技术设计、地震资料处理及薄储层预测提供了依据和指导。