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121.
122.
1μm宽硅深槽刻蚀技术   总被引:1,自引:1,他引:0  
王清平  郭林 《微电子学》1996,26(1):35-39
介绍了硅深槽刻蚀的基本原理和影响刻蚀效果的几个主要工艺因素。提出了一种实现1μm宽的硅深槽刻蚀工艺途径;并给出了1μm宽、8μm深、侧壁及底部光洁的硅深槽刻蚀工艺条件。  相似文献   
123.
Accelerated tests for oxidative rancidity of blanched peanuts, blanched dry-roasted peanuts, blanched oil-roasted peanuts and shelled Persian walnuts were performed at high and low oxygen content at controlled intermediate and low relative humidities. The results confirmed and quantified the importance of oxygen content, relative humidity and roasting process in the oxidative rancidity of peanuts and walnuts. There is a potential to extend shelf-life of roasted peanuts and walnuts by edible coatings with low oxygen permeability or nitrogen-flushing with oxygen barrier packaging. Static headspace chromatography was useful to monitor oxidative rancidity in walnuts and roasted peanuts.  相似文献   
124.
It is well known that dissolved oxygen fulfils critical roles in brewing yeast physiology and overall fermentative performance. The major and minor roles that have been identified are briefly discussed and another role, that of providing for minimal mitochondrial development and functionality, is suggested. The long accepted theory that mitochondria are irrelevant to fermentative performance is reviewed as to its basis and the evidence in support of it. However, minimal mitochondrial development is required to provide the cell with critical metabolic intermediates and components. These are identified and reviewed and finally, evidence is presented that mitochondria are critical to brewing yeast fermentative performance. The review concludes that when assessing the role of mitochondria, concern should be broader than simply for the energetic function of these organelles.  相似文献   
125.
C/O测井中采用同步测量技术来分析非弹性γ与俘获γ,但在一些MSI C/O测井中发现非弹性γ的一小部分或一大部分超前于非弹性门而进入俘获门,我们把这一问题叫做“错位”。“错位”使得C/O的CI值不正常,测井曲线不合格。这样的仪器不能用来测井。吉林油田测井公司碳氧比维修班成功地解决了C/O仪器“错位”等技术难题,在该油田所使用的CZF90-94-09发生器已测井88口,累计打靶时间230h,并且至今  相似文献   
126.
韩光武  马受武 《核技术》1995,18(12):759-764
用Monte Carlo法模拟计算了30keV和200keV的N^+与110keV的Fe^+在模拟细胞中的射程分布和径迹结构,并将110keVFe^+模拟计算的结果与RSB测量的结果相比较,发现计算与测量的结果吻合较好,离子的作用范围小于1μm。计算和实验的结果都说明能量相当低的重离子不大可能直接作用引起麦胚深层生物效应。  相似文献   
127.
A series of vanadium-tin mixed oxide catalysts have been prepared by the solid-state reaction of V2O5 and SnO2 at 1250°C. The fresh and the used catalysts have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). High temperature oxygen chemisorption (HTOC) has been employed to titrate the coordinatively unsaturated vanadia sites. Ammoxidation of mesitylene has been carried out on these catalysts and an optimum composition of vanadium is arrived at. Better yields of tricyanobenzene (TCB) compared to literature values are obtained. A good correlation between the oxygen uptake and the TCB yield extends the applicability of HTOC to the fused oxide system.IICT Communication No. 3507.  相似文献   
128.
The relative reactivities as well as the stoichiometric coefficients for a number of flavonoids, catechols, and—for comparison—standard phenolic antioxidants were determined by analyzing the kinetics of oxygen consumption in organic and micellar systems, with peroxidation initiated by lipid- and water-soluble azo initiators. The results demonstrated that the flavonoids did not behave as classic phenolic antioxidants such as α-tocopherol, but showed only moderate chain-breaking activities. The results were in line with other structure-activity relationship studies on the importance of the B-ring catechol structure, the 2,3-double bond, and the 3,5-hydroxy groups. The data are discussed in view of possible explanations of the deviations flavonoids reveal in their behavior compared with regular phenolic antioxidants.  相似文献   
129.
采用Ge/Pd/GaAs结构和快速热退火在n-GaAs上形成了低阻欧姆接触。利用H次离子质谱(SIMS)技术揭示和讨论了低欧姆接触形成的机理。比较了采用X 和CsX 信号检测的Ge,Pd,Ga和As的深度分布。结果表明采用CSX 可以提供更准确的结果和成分信息。  相似文献   
130.
The defect engineering in metalorganic vapor phase epitaxy InxGa1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGa1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of InxGa1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In0.53Ga0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.  相似文献   
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