非接触式叶片振测系统的叶尖定时传感器的研究

介绍了一种新型的叶尖定时传感器 ,传感器采用Y型耦合光纤与自聚焦透镜相结合 ,实现聚光照明及叶尖散射光的高效收集 ,大大提高了检测灵敏度。光源采用 4 5mW的半导体激光器 ,光电接收元件采用雪崩式光电二极管。传感器具有体积小、结构简单、成本低、安装和调节方便、测量精度高等优点。实验表明 ,该传感器对信号有良好的接收能力 ,满足涡轮机叶片高速、实时检测的要求 ,能为后续处理电路提供稳定而可靠的信号     

The flame retardant mechanism of polyolefins modified with chalk and silicone elastomer

This paper presents the current understanding of the flame retardant mechanism of Casico?. The study includes the flame retardant effect of each individual component: ethylene–acrylate copolymer, chalk and silicone elastomer, as well as the formation of an intumescent structure during heating. The flame retardant properties were investigated by cone calorimetry and oxygen index tests. To obtain insight into the flame retardant mechanism, heat treatment under different conditions has also been performed. The results indicate that the flame retardant mechanism of Casico is complex and is related to a number of reactions, e.g. ester pyrolysis of acrylate groups, formation of carbon dioxide by reaction between carboxylic acid and chalk, ionomer formation and formation of an intumescent structure stabilized by a protecting char. Special emphasis is given to the formation of the intumescent structure and its molecular structure as evaluated from ¹³C MAS‐NMR and ²⁹Si MAS‐NMR, ESCA and XRD analysis. After treatment at 500°C the intumescent structure consists mainly of silicon oxides and calcium carbonate and after treatment at 1000°C the intumescent structure consists of calcium silicate, calcium oxide and calcium hydroxide. Copyright © 2003 John Wiley & Sons, Ltd.     

移动式数据挖掘平台模型

本文提出了一种移动式网络海量数据挖掘平台，给出了数据挖掘任务的形式化描述，详细讨论了平台的体系结构、工作原理与流程。该平台克服了传统网络计算模式的缺陷，支持对异质、分散数据源和知识源的挖掘和检索，具有开放性、可伸缩性、灵活性、可扩展性、健壮性。     

掺硼非晶硅薄膜的微结构和电学性能研究

以硅烷(SiH4)和硼烷(B2H6)为气相反应先驱体，采用等离子体增强化学气相沉积法，(PECVD)制备出能应用于液晶光阀光导层的硼掺杂非晶氢硅薄膜。X射线衍射、原子力显微镜和光、暗电导测试表明，一定程度的硼掺杂提高了非晶氢硅薄膜的电导率、降低了非晶氢硅薄膜的光、暗电导比；硼掺杂促进薄膜晶态率的增加和硅晶粒尺寸的增大，薄膜的结晶状态将逐渐从非晶硅过渡到纳米硅，最后发展为多晶硅。红外吸收谱研究表明了大量的硼原子与硅、氢原子之间能形成某些形式的复合体，仅有少量硼元素对受主掺杂有贡献。     

基于多代理技术的传感器管理系统

针对分布式对空监视网中混合式传感器管理结构存在的问题，提出了基于多代理技术的混合式传感器管理结构。该结构较好地克服了混合式管理结构中在融合中心存在的瓶颈问题，通过多个传感器代理、融合中心代理之间的相互协商来实现传感器任务的分配。传感器代理与传感器相结合使传感器的工作模式实现高度的自动化和模块化，便于传感器的灵活组网。     

2.6～2.8GHz 100W硅微波脉冲功率晶体管

研究并制造了2.6～2.8GHz输出功率100W、脉宽1μs、占空比25%、增益7dB、效率35%的硅微波脉冲功率晶体管。本文介绍了该器件的设计考虑和采用的工艺技术,给出了研制结果。     

液化气铜片腐蚀原因及解决措施

本文就引起液化石油气（LPG）铜片腐蚀不合格的原因进行了分析，对JX－1A精脱硫剂工业应用效果进行了探讨，结果表明JX－1A精脱硫剂在解决了LPG铜片腐蚀不合格方面有很好的效果。     

Stress Heterogeneity Effect on the Strength of Silicon Nitride

The experiments reported in this paper demonstrate the causes of the failure of monolithic ceramics. The specimens are made of silicon nitride and tested at room temperature. The stress field within the specimen is different for each of four series of tests that have been conducted. Fractographic observations have also been made to identify the causes of the failures. A size effect analysis is performed.     

Evaluation of Slow Crack Growth Resistance in Ceramics for High-Temperature Applications

The slow (subcritical) crack growth (SCG) resistance of Si₃N₄ and SiC ceramics has been evaluated by a stepwise loading test on bending bars precracked by Vickers indentation. Three highly refractory materials were selected for the evaluation: i.e., (1) high-purity Si₃N₄ sintered by hot isostatic pressing (HIP) without additives and (2,3) α - and β - SiC pressureless sintered with B and C addition. Under the hypothesis of linear elastic behavior at high temperature, which was found satisfied in the present materials, the SCG resistance was expressed in terms of initial stress intensity factor critical for SCG failure within a predetermined lifetime. The present method was found useful in shortening the testing time and consistent with other traditional fatigue tests (e.g., static-fatigue test): It is recommended as a screening test for materials under research and development. Among the materials tested in the present study, the highest SCG resistance up to 1440°C was found in the high-purity Si₃N₄ without additives.     

Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs

The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D’s standard user interface.