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41.
Kiyotaka Wasa 《Bulletin of Materials Science》1993,16(6):643-663
Sputter deposition is currently being widely used in the microelectronics industry for the production of silicon integrated
circuits. Recently interest has been focused on sputter deposition as a new materials processing technique. The highly energetic
sputtered atoms enhance crystal growth and/or sintering during film growth. This results in lowering of the growth temperature
of high temperature materials including cubic diamonds. Single crystals of complex ceramics materials could be prepared by
sputter deposition through epitaxial growth process. Atomically controlled deposition using multi-target sputter enables to
make man-made superlattice including high-T
C superconductors of layered perovskite. At present sputter deposition is one of key materials technologies for the coming
century. 相似文献
42.
Thin CdTe films were deposited by hot-wall epitaxy (HWE) on (111) HgCdTe and CdZnTe substrates at temperatures from about 140 to 335°C. X-ray rocking curves were used to show that crystal quality of the CdTe (111)B films improved as substrate temperature increased from 140 to about 250°C. Rocking curve values for full width at half maximum (FWHM) decreased from 2–4 degrees at 140–150°C to less than 100 arc-s at 250°C, and a FWHM of 59 arc-s was the lowest value observed near 250°C. The FWHM of the HWE CdTe was found to be insensitive to growth rate below about 400Å/min, but increased to four degrees at 1250Å/min. X-ray diffraction confirmed that films grown on the B-face at higher temperatures were epitaxial, but contained a significant volume fraction, 35% to 50%, of rotational in-plane twins. Electron microscopy confirmed a coarse twin density, and photoluminescence spectra showed an absence of excitonic emission in the HWE films. Simultaneous growth on two (111) HgCdTe substrates with different surface polarities between 230°C and 335°C showed that deposition rate on the A-face decreased relative to that on the B-face as temperature increased. Films grown on the B-face exhibited better surface morphologies than those grown on the A-face. 相似文献
43.
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45.
钛酸铅系薄膜的热释电性能及其应用 总被引:10,自引:1,他引:9
叙述了钛酸铅系薄膜的热释电原理,介绍了国际上近几年钛酸铅系薄膜材料、制备工艺及热释电性能,并与块状陶瓷材料进行了比较,分析表明钛酸铅系薄膜具有优良的热释电性能及可观的应用前景。 相似文献
46.
47.
This paper highlights the possibility of inverse gas chromatography for the surface characterization of common fillers (CaCO3, talc, SiO2,) for paints and coatings. Divided solids are described, on the one hand, by the dispersive component of their surface energy and, on the other, by a specific parameter indicating their acid-base interaction potential. The role of the surface morphology at a molecular level is also examined. It is demonstrated that steric effects play an important role in the adsorption of probes on lamellar solids like talc. The consequences of surface treatments as well as examples of practical applications are also reported. 相似文献
48.
本法采用同一色谱条件反相高效液相色谱法测定棉铃宝中甲基对硫磷和辛硫磷的含量,方法简单易行,具有较高的精密度和准确度,其回收率分析为甲基对硫磷99.59%,辛硫磷101.0%。 相似文献
49.
Wu Ting M. Badaye T. Morishita N. Koshizuka S. Tanaka 《Journal of Superconductivity》1996,9(6):637-645
Recently, superconducting Nd1Ba2Cu3Oy (Ndl23) thin films with high superconducting transition temperature (T
c) have been successfully fabricated at our institute employing the standard laser ablation method. In this paper, we report the results of surface characterization of the Nd123 thin films using an ultrahigh vacuum scanning tunneling microscope/spectroscopy (UHV-STM/STS) and an atomic force microscope (AFM) system operated in air. Clear spiral pattern is observed on the surfaces of Nd123 thin films by STM and AFM, suggesting that films are formed by two-dimensional island growth mode. Contour plots of the spirals show that the step heights of the spirals are not always the integer or half-integer number of thec-axis parameter of the structure. This implies that the surface natural termination layer of the films may not be unique. This result is supported byI-V STS measurements. The surface morphology of the Nd123 thin films is compared with that of thec-axis-oriented Y1Ba2Cu3Sy thin films. Surface atomic images of the as-prepared Nd123 thin films are obtained employing both STM and AFM. STS measurements show that most of the surfaces are semiconductive. The results of STS measurements together with the fact that we are able to see the surface atomic images using scanning probe microscopes suggest that exposure to air does not cause serious degradation to the as-prepared surfaces of Nd123 thin films. 相似文献
50.
It is essential to automate the scanning path generation process to effectively implement the micro-stereolithography. However, a scanning path that is generated based only on a 3D CAD model introduces dimensional inaccuracies. In micro-stereolithography, the photopolymer solidification is affected by fabrication conditions, such as the optical properties (laser power, laser scanning speed, laser scanning pitch focusing condition, etc.) and material properties of the photopolymer. Thus, the photopolymer solidification phenomena must be considered when generating a laser scanning path. In this paper, a scanning path generation algorithm that uses 3D CAD data and considers the photopolymer solidification phenomena is proposed to improve the dimensional accuracy in micro-stereolithography. Multi-line photopolymer solidification experiments were performed for various laser scanning conditions to examine the photopolymer solidification phenomena. From these experiments, linear relations between the solidification length (width) and scanning length (width) were acquired and stored in a database. Subsequently, these data were utilized to compensate the scanning path of the laser beam. In addition, experiments for determining the layer thickness in the z-direction were performed and these results were also used in the scanning path generation algorithm.This research was supported by the Highly Advanced National Project (http://www.most.go.kr), which performs some of the National R&D Program, and sponsored by the Korean Ministry of Science and Technology under the contract project code M10214000116-02B1500-02010. 相似文献