Strain evolution of SiGe-on-insulator fabricated by germanium condensation method with over-oxidation

Strain evolutions of SiGe film during Ge condensation processes of SiGe on silicon-on-insulator were studied in detail with assistance of X-ray diffraction. At the beginning of Ge condensation, SiGe on silicon-on-insulator with low Ge fraction was oxidized at higher temperature of 1150 °C, the strong plastic deformation of buried SiO₂ and Si-Ge intermixing relieved most of the strain in SiGe with increasing Ge fraction. When temperature was reduced to 900 °C for oxidation of SiGe layer with higher Ge fraction, Ge accumulation overmatched Si-Ge inter-diffusion, resulting in non-uniform profile of Ge in SiGe layer. During this period, plastic deformation of buried SiO₂ can be neglected and dislocation gliding plays a significant role in relieving strain in SiGe, which enlarges the surface roughness. The strain in SiGe increases gradually with condensation time for the thickness of SiGe layer reduces close to its critical thickness, even with higher Ge fraction. Intensive over-oxidation of germanium-on-insulator materials was suggested to be effective to fully relax the compressive strain but should be precisely controlled to avoid surface deterioration.     

Surface activation using oxygen and nitrogen radical for Ge-Si Avalanche photodiode integration

In this work, an alternative method for producing the single crystalline Ge-Si Avalanche photodiodes (APD) with low thermal budget was investigated. Structural and electrical investigations show that low temperature Ge to Si wafer bonding can be used to achieve successful APD integration. Based on the surface chemistry of the Ge layer, the buried interfaces were investigated using high resolution transmission electron microscopy as a function of surface activation after low temperature annealing at 200 and 300 °C. The hetero-interface was characterized by measuring forward and reverse currents.     

The effect of Se and Se/Al passivation on the oxidation of Ge

The molecular and atomic oxidation of molecular beam deposited Se passivating layers on Ge substrates was in situ investigated by X-ray photoelectron spectroscopy. It turns out that while Se is efficient in suppressing Ge oxidation upon molecular oxygen exposure, an extra thin Al layer is needed to protect the Ge surface from highly reactive atomic oxygen radicals. Electrical measurements performed on the Al-covered surfaces reveal that Se is beneficial in reducing the interface state density.     

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

The change of strain in Si_0.7Ge_0.3 films was investigated with medium energy ion scattering (MEIS). Si was removed in the films by selective oxidation at 800 °C, resulting in the formation of a Ge pile-up layer on the surface. The relaxation and the thickness of the pile-up layer were closely related to the oxidation time. MEIS data demonstrated that relaxation of the Ge layer in the depth direction occurred partially, and that the rates of relaxation decreased with depth. In addition, the rate of relaxation increased with the oxidation time. Lastly, the relaxation of the Ge layer affected the strain of the remaining Si_0.7Ge_0.3 substrate.     

《抱朴子内篇》的仙论体系

在魏晋南北朝时期,道教神学理论进入了繁忙建设阶段。葛洪作为道教神学理论的奠基人,《抱朴子内篇》是其经典作品。在通过对神仙的有无,成仙的途径手段两个方面作出了创造性的阐述,从而在确立了神仙必有、长生可致的完整体系。     

Ge(Li)γ谱本底的直接扣除法

本文介绍了一种直接扣除峰下本底的技术,这个技术已在《SPAN Ge(Li)γ谱分析程序》中得到成功的应用。这个方法是积分峰本底技术的完善和发展,它对于十分复杂的包含有多重峰的Ge(Li)γ谱也能得出合理的本底线,并且能从γ谱中直接扣除。     

Catalytic hydrogenation for improvement of GaAs/Ge solar cell efficiency

Hydrogen passivation on MOCVD grown p-GaAs epilayers on Ge substrate have been studied by plasma and catalytic hydrogenation and the results were compared. The conversion efficiency of the GaAs/Ge solar cells was found to increase by 10% after catalytic hydrogenation at AM1.5. This increase in efficiency is probably due to passivation of surface dangling bonds.     

超薄体MOSFET的结构优化

对UTB器件的各结构参数进行了优化,给出了UTB器件设计的指导方向.在UTB器件的设计中,有三个重要参数,即器件的源漏提升高度、锗硅栅(GexSi1-x)中Ge含量的摩尔百分比和硅膜的厚度,并对这三个结构参数对器件性能的影响进行了模拟分析,给出了器件各结构参数的优化方向,找出了可行Ge含量的摩尔百分比和可行硅膜厚度之间的设计容区.通过模拟分析发现,只要合理选择器件的结构参数,就能得到性能优良的UTB器件.     

Ce–Ti–Ge system at 1170 K

Phase equilibria in the Ce–Ti–Ge system were investigated by X-ray powder diffraction, electron probe X-ray analysis and the isothermal section at 1170 K was obtained. We confirmed the CeFeSi-type CeTiGe compound (a=0.4135 (1) nm, c=0.7921 (1) nm, space group P4/nmm, No. 129). A new compound, Ce₂₀Ti₂₀Ge₆₀, was found (a=0.3967(6) nm, c=6.054 (2) nm, space group P4). It is obvious that the ThSi₂-type Ce₃₃Ti₇Ge₅₄ compound (a=0.4217 (1) nm, c=1.4184 (3) nm, space group I4₁/amd, No. 141) belongs to the extended solid solution region of the ThSi₂-type CeGe₂ compound.     

微型反应堆辐照座内中子温度和超热指标的测定

一、引言对于高浓铀燃料、金属铍反射层,主要作为中子活化分析用的微型反应堆而言,对有关辐照座内的能谱和谱参数必须有所了解,中子温度是重要的谱参数,它基本上反映了反应堆热谱的特征。