GaAs/Ge solar cell AC parameters under illumination

The ac parameters of GaAs/Ge solar cell were measured under illumination at different cell temperatures using impedance spectroscopy technique. They are compared with the dark measurements. It is found that the cell capacitance is higher and cell resistance is lower under illumination than in dark for all cell terminal voltages. The cell capacitances at the corresponding maximum power point voltage (terminal) do not vary with temperature where as the cell resistance decreases. The cell capacitance under illumination is estimated from the dark cell capacitance and it is in good agreement with the measured illumination data.     

论晚清“科学小说”的定名及其影响

"科学小说"这个名称在20世纪初由日本传入中国,这一名称在中国的流行不仅很大程度上传播了"科学"这个全新的翻译词汇,而且"科学"二字体现的知识权威性充分昭示出文人对于此种小说的看重。在"科学"出现以前,是"格致"这个词基本上指代科学技术的意思,不过却只有"科学小说",很少看到"格致小说"。通过考察晚清"科学小说"这一名称的由来,我们不仅可以了解当时人们对于科学小说的看法与期待,还有助于我们还原多面而真切的历史场域,从而对中国科幻小说诞生初期的状况有更为丰满具体的认识。     

Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power

Static and dynamic properties of both complementary n-Ge/p-Si and p-Ge/n-Si hetero-junction Double-Drift IMPATT diodes have been investigated by an advanced and realistic computer simulation technique, developed by the authors, for operation in the Ka-, V- and W-band frequencies. The results are further compared with corresponding Si and Ge homo-junction devices. The study shows high values of device efficiency, such as 23%, 22% and 21.5%, for n-Ge/p-Si IMPATTs at the Ka, V and W bands, respectively. The peak device negative conductances for n-Si/p-Ge and n-Ge/p-Si hetero-junction devices found to be 50.7 ? 10⁶ S/m² and 71.3 ? 10⁶ S/m², which are ～3-4 times better than their Si and Ge counterparts at the V-band. The computed values of RF power-density for n-Ge/p-Si hetero-junction IMPATTs are 1.0 ? 10⁹, 1.1 ? 10⁹ and 1.4 ? 10⁹ W/m², respectively, for Ka-, V- and W-band operation, which can be observed to be the highest when compared with Si, Ge and n-Si/p-Ge devices. Both of the hetero-junctions, especially the n-Ge/p-Si hetero-junction diode, can thus become a superior RF-power generator over a wide range of frequencies. The present study will help the device engineers to choose a suitable material pair for the development of high-power MM-wave IMPATT for applications in the civil and defense-related arena.     

Growth of Ge-Si nanowire heterostructures via chemical vapor deposition

The growth of Ge-Si and Ge-Si nanowire (NW) heterostructures was demonstrated via chemical vapor deposition. Due to the influence of interface energy, differing topographies of the heterostructures were observed. On initially grown Ge NWs, numerous Si NW branches were grown near the tip due to Au migration. However, on initially grown Si NWs, high-density Ge nanodots were observed.     

Ellipsometric study of thermally induced redistribution and crystallization of Ge in Ge:SiO2 mixture layers

Mixture layers of Ge:SiO₂ of 40:60 mol% respectively, have been prepared by co-sputtering. The thermally induced change of optical properties of the layers was studied by variable angle spectroscopic ellipsometry. The mixture was modelled as an unknown material with optical constants described by multiple oscillators. The optical parameters determined from ellipsometric measurements can be well correlated with structural changes in the mixture. The results indicate that Ge in the mixture deposited or annealed up to 600 °C is in an amorphous state and it redistributes with increase of temperature, changing refractive index through the layer. The crystallization starts between 600 and 650 °C, at first next to the substrate. Crystallites size grows with temperature. Results were compared with findings of grazing incidence wide angle X-ray scattering measurements and a good agreement was found. Ellipsometry has been shown to be an appropriate non-invasive technique for characterization of this kind of layers.     

微型反应堆照射座内热中子通量谱的测定

一、基本原理用一组展开函数?_i(E)来表示所测的真实谱φ(E),典型的展开函数是一组N—1项的多项式,N是探测箔种类数。     

Flux confinement by artificial arrays and clusters in superconducting films

We have studied the superconducting properties of antidot arrays and mesoscopic antidot clusters near the superconducting-normal phase boundary. Characteristic minima and maxima have been observed in the magnetore-sistance, critical current and phase boundary caused by the formation of stable vortex configurations at the antidots. A comparison with a simple theoretical model has shown that the effects in the arrays as well as in the clusters originate from quantization of the fluxoid at the antidots. This model has enabled an identification of all vortex configurations.     

掺锗CZSi原生晶体中氧的微沉淀

利用锗硅单晶(锗浓度约为1019cm-3)切制成的籽晶和一般无位错硅单晶生长的缩细颈工艺以及从晶体头部至尾部平稳降低拉速的工艺,生长了直径为60、50和40mm,掺锗量为0.1%和0.5%(锗硅重量比)的锗硅单晶.利用化学腐蚀-金相显微镜法、扫描电子显微镜(SEM)能谱分析和X射线双晶衍射等方法观测了掺锗硅的原生晶体中缺陷及氧的沉淀的状况.发现用CZ法生长的锗硅原生晶体与常规工艺生长的CZSi晶体不同,体内存在着较高密度的氧微沉淀.在晶体尾部,由于锗的分凝使熔体中锗高度富集,出现了"组分过冷"现象,在晶粒间界应力较大处有锗的析出并出现了枝状结晶生长.晶体中高密度氧的微沉淀经过1250℃热处理1h后会溶解消失.     

Computer-aided band gap engineering and experimental verification of amorphous silicon–germanium solar cells

A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. By computer simulations we show how bending the grading of the band gap in the i-layer contributes to the enhancement of the carrier collection, improving the fill factor and efficiency. The differences observed between experiments and simulations are studied using Rutherford Backscattering Spectrometry (RBS). The results highlight weak points during the deposition process, whose control enables us to bring together experimental and computational results.