Nature of heterophase inclusions in high-purity optical fiber materials as studied with 3D laser ultramicroscopy

3D laser ultramicroscopy (3D LUM) is intended specially for determining the concentration and size distribution of submicron inclusions in the bulk samples of high-purity materials for visible and IR fiber optics. In this work the 3D LUM technique is shown to be able to identify the nature of individual inclusions detected. The measurement of the light scattered by an inclusion at a varied probe beam wavelength and polarization and at a varied scattered light collection angle makes it possible to determine the inclusion refractive index. The 3D LUM possibilities are illustrated by the example of studying the inclusion nature in the As₂S₃ glass samples prepared by the direct synthesis from elements in a quartz container at elevated temperatures.     

无源光网络标准发展及关键技术研究

无源光网络(Passive Optical Network,PON)作为当今接入网的主要技术解决方案,具有带宽使用效率高、传输距离远、抗干扰能力强等特点.通过研究PON技术的发展动态,本文首先归纳了各种PON技术的产生背景和应用特点,整理出各技术间的连接关系及主要标准;其次介绍了PON技术的帧结构,并对带宽、波长、传输模式等PON技术的主要参数进行了汇总;然后将国内外研究热点进行划分,围绕媒体访问控制协议、帧结构、动态带宽分配算法、节能机制等关键技术,阐述了其研究现状及在PON中的重要作用;最后对PON技术的发展趋势进行了展望.     

Structural,electrical, optical and dielectric properties of yttrium substituted cadmium ferrites prepared by Co-Precipitation method

The yttrium substituted cadmium ferrites having composition Cd_1-xY_xFe₂O₄ (X = 0.00, 0.125, 0.250, 0.375, 0.500) were synthesized by the co-precipitation method and sintered at 1100 °C for 6 h. Structural, morphological, electrical, optical and dielectric characteristics were explored by XRD, SEM, EDS, FTIR, I–V two probes, UV–Vis and LCR techniques.XRD results confirmed the cubic structure of spinel ferrites. A decrease in lattice constants of the prepared samples was observed with the substitution of Y ions and was attributed to the difference in ionic radii of Y³⁺ (0.95 Å) and Cd²⁺ (0.97 Å) ions. Cationic distributions, ionic radii of both tetrahedral and octahedral sites, tolerance factor, oxygen positional parameters, bond lengths, interatomic distances, positional parameters and bond length angles were calculated from XRD data. The morphology of the prepared ferrites was studied using SEM and results ratified the XRD results. EDS confirmed the presence of all inserted elements in Cd_1-xY_xFe₂O₄ composition. DC resistivity and drift mobility of soft-ferrites were found to be increased from 1.047 × 10⁸–4.822 × 10¹⁰ Ω-cm and 5.87 × 10⁻¹² – 1.045 × 10⁻¹⁴ cm²V⁻¹s⁻¹, respectively, at 523 K with yttrium content confirming the behavior of semiconductor materials. The optical band gap energy calculated from the UV–Vis pattern of the Cd_1-xY_xFe₂O₄ system was decreased from 3.6011 to 2.8153 eV. DC resistivity and optical band gaps exposed inverse relation. FTIR results revealed lower and upper-frequency absorption bands in the ranges of 419.31–417.01 cm⁻¹ and 540.95–565.70 cm⁻¹, respectively. Dielectric constant and dielectric losses were in decreasing order, while ac conductivity revealed rising behavior with increasing frequency. Results showed the potential of yttrium doped Cd nanoferrites for applications in high-frequency microwave absorbing devices.     

Influence of deposition parameters on surface morphology and application of CuInS2 thin films in solar cell and photocatalysis

Copper indium disulfide (CuInS₂) thin films as an absorption layer for solar cell and photocatalytic degradation of organic pollutants, were successfully electrodeposited on the FTO coated glass substrate using the simple and inexpensive electrodeposition method and a sulfurization process. The effects of the Cu/In molar ratio, annealing temperature and kind of Cu²⁺ precursor (Cu(salen) and Cu(acac)₂ as novel Cu²⁺ precursors) on the structural and morphological properties of samples were examined. The XRD diffraction patterns and energy dispersive spectroscopy measurements exhibit that high-quality film with superior crystalline structure was formed in the presence of Cu(salen) as Cu²⁺ precursor. Also, we found that a suitable heat treatment temperature could suppress the CuS phases and form well-crystallized CIS. As we know, this is the first reported efficiency for any CuInS₂ superstrate solar cell to date that fabricated using Cu(salen) as Cu²⁺ precursor. In addition, the photocatalytic degradation of organic dye in the presence of as-synthesized CuInS₂ thin films was studied. The as-prepared semiconductor photocatalysts have a good reusability; it can be successfully reused for 5 times recycling photoactivity tests.     

Smart optical measurement probe for autonomously detecting nano-defects on bare semiconductor wafer surface: Verification of proposed concept

We propose a new method of inspecting a surface for fine defects that combines the optical inspection method with observation of the physical behavior of a liquid. A liquid thin film on a substrate behaves as a near-field physical probe that autonomously captures nano-particulate defects. Optical observation of the interfacial behavior of the liquid thin film is used to detect minute defects. This method combines the characteristics of optical detection (i.e., detection from a remote field and simultaneous detectability on a plane) and the high sensitivity of a physical near-field probe. We examined the basic principles of the proposed method through numerical calculation and applied it in experiments to detect fine particulate defects on a silicon substrate for semiconductor manufacturing to demonstrate the validity of the basic concept of the proposed method.     

Improved optical and structural properties of cadmium sulfide nanostructures for optoelectronic applications

In this study, the effect of ZnO seed layer on the growth of uniform CdS nanostructures was investigated using chemical bath deposition technique. Besides, the influence of molar concentration of reagents on the surface morphology, structural and optoelectrical properties of the deposited CdS thin films were examined. The CdS nanostructures were grown on bare glass and ZnO/glass substrates with different reagent molar concentrations. The results indicated an improvement in the homogeneity and uniformity of the grown CdS nanostructures on ZnO seed layer which can be due to the low lattice mismatch between ZnO and CdS structures. The CdS/ZnO samples were optimized by changing the molar concentration of reagents. A three–dimensional intersecting vertical nanosheet morphology with hexagonal structure was obtained when modified chemical concentration of 0.5 M was applied. The XRD pattern of CdS nanosheets indicated the hexagonal phase of CdS which were strongly orientated along (002) plane. The elevated intensity of dominant peak related to this sample confirmed the improved crystal quality of this CdS nanostructure comparing to the other samples. The UV–Vis spectrum demonstrated a high absorption coefficient for CdS intersecting nanosheets which might be due to the high specific surface area and light trapping behavior of this sample. The photoluminescence study also showed an improvement in optical properties of optimized CdS nanostructures. In order to study the optoelectrical properties of CdS nanostructures, metal–semiconductor–metal photodetectors were fabricated with different CdS samples and their current–voltage characteristics were analyzed. The results indicated an enhancement in photosensitivity, responsivity, and speed of photodetectors based on optimized CdS nanostructures.     

连续波腔衰荡技术原理推导及实验研究

基于无源腔的Q值定义,根据能量守恒原理,对连续波腔衰荡技术测量原理进行了推导,并基于多光束干涉理论,就入射光关断时间对腔出射光强信号衰荡线形及测量结果的影响进行了数值模拟和分析,分析表明：入射光的关断时间很大程度上决定着腔出射光功率信号的衰减线形,如果要消除入射光关断时间对测量结果的影响,入射光关断必须小于腔衰荡时间的1%。根据理论分析要求建立了一套测量系统,并对腔损耗约为50ppm的低损无源腔进行了实际测量,实验结果的分析显示,该测量系统测量误差约为0．15ppm。     

On Burst Length Distribution and Preemption Probabilities in OBS Networks with Burst Segmentation

Recently, preemption techniques have attracted considerable attention as a means to provide differentiated quality of service in optical burst switching (OBS) networks. This paper is focused on the analysis of preemption probabilities for bursts within the same priority class. As proposed by Vokkarane and Jue ((2003)* IEEE J Select Areas Commun 21(7): 1198–1209) an incoming burst will preempt the burst in service, within the same priority class, if the residual length of the burst in service is smaller than the incoming burst length. For a general case with wavelength conversion, the preemption probability of contending bursts with a generic service distribution, not necessarily exponential, is analyzed. First, we show that the size distribution for the preempting bursts is shifted to larger values, in comparison to the original burst size distribution. Second, we obtain an upper and lower bound for the preemption probability. Finally, the asymptotic behavior of the OBS switch is analyzed showing that preemption will always occur for a very large number of wavelengths.     

Improving narrow bandgap a-SiGe:H alloys grown by hot-wire chemical vapor deposition

We have improved the electronic properties of narrow-bandgap (Tauc gap below 1.5 eV) amorphous-silicon germanium alloys (a-SiGe:H) grown by hot-wire chemical vapor deposition (HWCVD) by lowering the substrate temperature and deposition rate. Prior to this work, we were unable to grow a-SiGe:H alloys with bandgaps below 1.5 eV that had photo-to-dark conductivity ratios comparable with our plasma-enhanced CVD (PECVD) grown materials [B.P. Nelson et al., Mater. Res. Soc. Symp. 507 (1998) 447]. Decreasing the filament diameter from our standard configuration of 0.5 mm to 0.38 or 0.25 mm provides first big improvements in the photoresponse of these alloys. Lowering the substrate temperature from our previous optimal temperatures (T_sub starting at 435 °C) to at 250 °C provides additional photo-to-dark conductivity ratio increasing by two orders of magnitude for growth conditions containing 20–30% GeH₄ in the gas phase (relative to the total GeH₄+SiH₄ flow).     

Gamma-irradiation-induced Ag/SiO2 composite films and their optical absorption properties

Small Ag particles or clusters dispersed mesoporous SiO₂ composite films were prepared by a new method: First the matrix SiO₂ films were prepared by sol-gel process combined with the dip-coating technique, then they were soaked in AgNO₃ solutions followed by irradiation of γ-ray at room temperature and in ambient pressure. The structures of these films were examined by X-ray diffraction (XRD), high-resolution transmission electron microscope (HRTEM), and optical absorption spectroscopy. It has been shown that the Ag particles grown within the porous SiO₂ films are very small, and they are isolated and dispersed from each other with very narrow size distributions. With increasing the soaking concentration and an additional annealing, an opposite peakshift effect of the surface plasmon resonance (SPR) was observed in the optical absorption measurements.