Optoelectronic devices towards monolithic integration

Starting from the present state-of-the-art of discrete devices up to the realization of monolithic semiconductor integrated prototypes, an overview of optoelectronic devices for telecommunications is given. Among discrete devices single frequency lasers, tunable and multi-sectionDFB lasers andPIN andAPD photodiode detectors are analysed, including the use of new technologies in progress for a second generation of devices. On the future perspective ofIBCN distribution networks, some economics of the hybrid and monolithic form of integration are attempted. Finally a short outline of the most recent achievements in monolithic integration is presented, taking into particular consideration the activities in this field byEEC ESPRIT andRACE programmes.     

Accurate depth profiling through energy-dependent pulse height deficit compensation in gas ionization detectors

The impact of the pulse height deficit effect in gas ionization detectors on the accurate extraction of depth information from heavy ion elastic recoil detection spectra has been investigated. Thin GaN films and Ge_xSi_1−x/Si heterostructures have been analyzed with a 200 MeV ¹⁹⁷Au beam. Employing an empirical parameterisation of the pulse height deficit, a global energy calibration of the detector can be achieved. Energy spectra have been compared, calibrated with either a constant or a full energy-dependent compensation for the deficit. A constant compensation results in significant distortion of the extracted depth profile for heavier ions, whereas an energy-dependent compensation yields true concentration–depth profiles.     

薄膜波导光隔离器和光电子单片集成技术

叙述了Ｂｉ，Ａｌ：ＹＩＧ薄膜的液相外延生长，研究了这种薄膜材料的光吸收系数、法拉第旋转角、磁光优值及生长感生磁各向异性与Ｂｉ含量的关系。在此基础上，连续外延生长了作单模磁光波导的双层Ｂｉ，Ａｌ：ＹＩＣ薄膜。光纤偏振器的使用使薄膜波导光隔离器向实用化迈进了一步，恒磁薄膜作偏磁场为器件集成化作出了贡献。采用ＭＯＣＶＤ技术，在ＧＧＧ（钆镓石榴石）基片上同时外延生长Ⅲ－Ⅴ族半导体薄膜和钇铁石榴石（ＹＩＧ）薄膜，把光隔离器和磁光光源直接集成在一起，是一种非常有前景的光电子集成组件。     

同轴型光电器件的研究开发

本文简要地介绍了武汉电信器件公司正在研究开发的同轴型光电器件，新的器件的工艺与结构特点以及主要技术指标、使用前景。     

利用线阵CCD实现宽波段、大视场短脉冲激光波长的远场测量

介绍了一种利用线阵ＣＣＤ实现宽波段、大视场脉冲激光波长及方向远场测量的原理和实验装置；对强烈背景下激光信号的提取与处理方法进行了理论分析和实验研究，给出了系统信噪比与探测器件工作频率的理论公式；最后简要介绍了远场实验和测试结果     

Investigation of Ni/4H-SiC diodes as radiation detectors with low doped n-type 4H-SiC epilayers

The development of SiC minimum ionising particle (MIP) detectors imposes severe constrains in the electronic quality and the thickness of the material due to the relatively high value of the energy required to produce an electron–hole pair in this material by MIP against the value for Si. In this work, particle detectors were made using semiconductor epitaxial undoped n-type 4H-SiC as the detection medium. The thickness of the epilayer is on the order of 40 μm and the detectors are realised by the formation of a nickel silicide on the silicon surface of the epitaxial layer (Schottky contact) and of the ohmic contact on the back side of 4H-SiC substrate. The low doping concentration (6×10¹³ cm⁻³) of the epilayer allows the detector to be totally depleted at relatively low reverse voltages (100 V). We present experimental data on the charge collection properties by using 5.486 MeV -particles impinging on the Schottky contact. A 100% charge collection efficiency (CCE) is demonstrated for reverse voltages higher than the one needed to have a depletion region equal to the -particle extrapolated range in SiC. The diffusion contribution of the minority change carriers to CCE is pointed out. By comparing measured CCE values to the outcomes of drift–diffusion simulation, values are inferred for the hole lifetime within the neutral region of the charge carrier generation layer.     

Advances in ALCHEMI analysis

The ALCHEMI method for locating the sites of foreign atoms within crystals is known to be sensitive to the delocalized emission of X-rays. This can result in large errors in some cases through differences in delocalization for different excitations or by error amplification in the ratio method of analysis. An alternative approach to the analysis of ALCHEMI data, using multivariate statistical analysis, is extended to the case of multiple impurities. Initial results from zone-axis channelling experiments for a Yb-doped zirconolite (CaZrTi₂O₇) are shown to confirm the improved accuracy of this method, especially for axial orientations. Data were collected using a 400-keV analytical electron microscope fitted with an intrinsic Ge X-ray detector. The potential advantages for ALCHEMI analysis of Ge detectors are considered.     

Thermal and nonequilibrium responses of superconductors for radiation detectors

This work summarizes the progress in the study of the superconductor response to optical radiation and in the development of infrared detectors. The recent advances in the design of high-T _c superconducting radiation detectors using silicon microfabrication technology are emphasized. Thermal and optical properties important for the detector performance are discussed. The mechanism of the nonequilibrium optical response and its potential use to build fast and sensitive radiation detectors are described. Future challenges and opportunities in the development of high-T _c superconducting radiation detectors are highlighted.     

Status and application of HgCdTe device modeling

In this article, device modeling refers to numerical simulation of semiconductor device physics to predict electrical behavior. The silicon integrated circuit industry provides the example for the use of technology computer-aided design to simulate wafer fabrication processes, and the electrical performance of devices and circuits. This paper first reviews semiconductor device modeling in general, then as applied in work supporting the development and analysis of HgCdTe infrared detectors. Example applications of one- and two-dimensional device modeling are simulation of a bias-selectable, integrated two-color detector, and two-dimensional effects on the spectral response of a HgCdTe detector with composition grading.