RCE光电探测器顶部DBR的优化

对研制的 VCSEL 结构外延片制成的谐振腔增强型 (简称 RCE)光电探测器进行了物理分析和实验研究 ,由于 VCSEL 与 RCE光电探测器对谐振腔反射镜的反射率要求不同 ,通过腐蚀 VCSEL 器件顶部 DBR,改变顶镜反射率 ,能够得到量子效率峰值和半宽优化兼容的 RCE光电探测器 ,实现 VCSEL 与 RCE探测器的单片集成 .     

采用三级密钥体系实现校园卡密钥管理子系统

在校园卡系统中,数据要求在多个子系统间进行传递和处理。这些数据多是安全级别需求比较高的金融数据。对这些数据的保护是校园卡系统中非常重要的工作。但目前的高校校园卡系统中并没有针对密钥系统的设计,甚至有些子系统间的数据传递并没有加密的设计。为确保校园卡系统中金融数据在网络传递过程中的绝对安全,本文介绍一种采用三级密钥体系的数据加密方式。希望该方式能对高校校园卡系统建设中的数据安全保障工作提供参考。     

Small‐Sized High‐Power PIN Diode Switch with Defected Ground Structure for Wireless Broadband Internet

This letter presents a small‐sized, high‐power single‐pole double‐throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow‐wave characteristic, the DGS is used for the quarter‐wave (°/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt‐connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt‐type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns.     

一种渐变掺杂型pin光探测器的高速响应性能研究

高速光探测器是高速光纤通信系统和网络中的关键器件,它要求光探测器具有宽的频率响应带宽和高量子效率。垂直入光型pin光探测器的高速性能和量子效率均受到吸收层厚度的限制。为了改善其高速性能,采用InGaAsP材料作为吸收层以及限制层渐变掺杂的方法,对垂直入光型pin光探测器的高速响应性能进行了理论研究和仿真,结果表明,高速响应达到了40GHz。与不采用渐变掺杂浓度的同种结构光探测器相比,高速响应性能显著提高。     

11—THE EFFECT OF BACKDRAFT APPLIED AT THE FIRST GILLING OPERATION AFTER WORSTED CARDING

The application of backdraft at the first gilling operation after carding results in significant reduction in percentage noil and an increase in the mean fibre length of the top. These effects depend on the backdraft and direction of feed. Percentage noil is also dependent on backratch but is independent of the faller-bar pinning density. Measurements are also given to show how back-roller force is affected by backdraft, backratch, and the total free space between the pins and the fallers.     

光电探测器非线性响应的一种简易修正

本文给出了一种采用中性滤光片对光电探测器的非线性响应作修正的方法。     

Nitride-Based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer

The GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with a low-temperature (LT)-GaN layer have been demonstrated. It was found that we could achieve a two orders of magnitude smaller, photodetector-dark current by introducing a LT-GaN layer, which could be attributed to the larger Schottky-barrier height between the Ni/Au metal contact and the LT-GaN layer. It was also found that photodetectors with the LT-GaN layer could provide a larger photocurrent to dark-current contrast ratio and a larger UV-to-visible rejection ratio. The maximum responsivity was found to be 3.3 A/W and 0.13 A/W when the photodetector with a LT-GaN layer was biased at 5 V and 1 V, respectively.     

i基区渐变掺杂SiGe/Si异质结开关功率二极管的特性模拟

提出了在SiGe／Si异质结开关功率二极管的本征i区中采用掺杂浓度三层渐变式结构。由Medici模拟所得的特性曲线表明，该结构在正向I—V特性基本不发生改变的前提下，与i区固定掺杂结构相比具有更好的反向恢复电流与反向恢复电压特性，尤其软恢复特性更加明显，反向恢复过程加快。还对渐变掺杂所得到的优越性能进行了分析，从理论上给出了较好的解释。     

ZnCdS films for solar cell and photodetector applications deposited by In Situ chemical doping of CdS with Zn

ZnCdS films were formed by in situ chemical doping of CdS with Zn in a chemical bath. The X-ray diffraction (XRD) patterns of CdS films after Zn doping showed a more disordered nature, consisting of reflections from Zn_0.049Cd_0.951S (JCPDS 40-834) as well as CdS greenockite (hexagonal, JCPDS 41-1049) and hawleyite (cubic, JCPDS 10-0454) phases. A comparison of the optical transmittance spectra for undoped and Zn-doped films showed that the cut-off wavelength was modified after Zn doping, indicating the presence of impurity states in the band gap. Zn-doped films showed an increase in dark conductivity after annealing at about 200°C. These films exhibit promising characteristics for application in solar cell and photodetector structures.