一种多波束面阵天线的分析与设计

介绍了二维多波束天线的特点和实现二维多波束的几种方法，针对空馈的Rotman透镜推导出了由它馈电的平面天线阵的相位计算公式及设计方法，在此基础上成功地实现了空馈透镜的平面天线阵样机，并给出了相应的测试结果。     

A One‐Kilobit PQR‐CMOS Smart Pixel Array

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and √T‐dependent thermal red shifts. We observed uniform bottom emissions from a 1‐kb smart pixel chip of a 32×32 InGaAs PQR laser array flip‐chip bonded to a 0.35 µm CMOS‐based PQR laser driver. The PQR‐CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.     

矩形微带串馈线阵的设计和仿真

介绍了矩形微带贴片天线的特点、原理和设计方法,设计了3×1矩形贴片组成的串馈驻波线阵,运用以有限元法为原理的专业软件AnsoftHFSS对该天线进行仿真,并与测量结果进行比较,仿真结果与测量结果吻合。     

基于嵌入式计算机和Ethernet的分布式波控系统

介绍一种基于嵌入式计算机和以太网(Ethernet)的相控阵雷达分布式波控系统。整个波控系统以数个嵌入式计算机为核心，通过以太网与雷达的控制计算机通讯。     

准最佳二进阵列偶

本文在最佳二进阵列、准最佳二进阵列和最佳二进阵列偶的基础上,定义了一种新的最佳信号,即准最佳二进阵列偶.讨论了准最佳二进阵列偶的体积、变换性质,并对其进行了Fourier频谱分析,得到了部分有益的结果.还用计算机穷举搜索出了体积从2~24的准最佳二进阵列偶.     

自成像列阵共振腔的分析——Ⅰ.Talbot共振腔

利用自成像效应进行半导体列阵激光器锁相是一种重要的外腔锁相技术,所构成的共振腔可分为Talbot腔和带相位补偿板的Lau腔。我们用Fox-Li方法计算了共振模式。本文给出了Talbot腔的计算结果和分析,表明同相和反相模的损耗随腔长变化存在临界点。     

面阵列封装器件的贴装技术

面阵列封装器件在电子产品中的使用率逐年上升，如何实现其高速贴装是影响生产线效率的重要因素。从不同的角度论述了面阵列封装器件实现高速贴装的手段与技术。     

PERIODIC DYADIC GREEN''S FUNCTION FOR FIELD ANALYSIS IN EMC CHAMBER

Herein a novel Dyadic Green's Function (DGF) is presented to calculate the field in ElectroMagnetic Compatibility (EMC) chamber. Due to the difficulty of simulating the whole chamber environment, the analysis combines the DGF formulation and the FEM method, with the latter deals with the reflection from absorbers. With DGF formulation for infinite periodic array structures, this paper investigates electromagnetic field in chamber with truncated arrays. The reflection from the absorber serves as the virtual source contributing to the total field. Hence the whole chamber field calculation can be separated from the work of absorber model set-up. Practically the field homogeneity test and Normal Site Attenuation (NSA) test are carried out to evaluate the chamber performance. Based on the method in this paper, the simulation results agree well with the test, and predict successfully the victim frequency points of the chamber.     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.     

高分辨方位估计方法的稳健性研究

基于特征分解理论的子空间类高分辨方位估计方法是目前阵列信号处理领域的研究重点。与波束形成法相比，子空间类法的特点为估计精度高和分辨能力强。但是这类高分辨方法对阵列模型失配十分敏感，存在阵列误差时其估计性能明显下降。文章通过仿真和实验深入研究了MUSIC、Johnson和Mini-Norm等子空间类高分辨方位估计方法的稳健性问题，分析了一定信噪比条件下阵列误差对上述三种方法估计结果的影响程度。研究结果表明，MUSIC法和Johnson法的估计性能相当，而Mini—Norm法的稳健性明显高于MUSIC法和Johnson法，分辨能力和估计精度较好，具有良好的工程应用前景。