A UWB CMOS low-noise amplifier with noise reduction and linearity improvement techniques

In this paper, a highly linear CMOS low noise amplifier (LNA) for ultra-wideband applications is presented. The proposed LNA improves both input second- and third-order intercept points (IIP2 and IIP3) by canceling the common-mode part of all intermodulation components from the output current. The proposed LNA structure creates equal common-mode currents with the opposite sign by cascading two differential pairs with a cross-connected output. These currents eliminate each other at the output and improve the linearity. Also, the proposed LNA improves the noise performance by canceling the thermal noise of the input and auxiliary transistors at the output. Detailed analysis is provided to show the effectiveness of the proposed LNA structure. Post-layout circuit level simulation results using a 90 nm RF CMOS process with Spectre-RF reveal 9.5 dB power gain, -3 dB bandwidth (BW_−3dB) of 8 GHz from 2.4 GHz to 10.4 GHz, and mean IIP3 and IIP2 of +13.1 dBm and +42.8 dBm, respectively. The simulated S₁₁ is less than −11 dB in whole frequency range while the LNA consumes 14.8 mW from a single 1.2 V power supply.     

一种新型的超宽带微带转共面带状线巴伦

设计了一种新型的微带转共面带状线（coplanarStripLine以下简称CPS）的巴伦结构。它可以应用于多种常用的介质板上,具有结构紧凑、超宽带、低损耗的特点。制作了一个两端为500微带线的背靠背电路,测试得插入损耗（S21）〉-1dB、回波损耗（S11）〈-15dB的带宽为2．7GHz～7．3GHz,S21〉-4dB、S11〈-10dB的带宽为1．4GHz～15．6GHz。     

Low-power highly linear UWB CMOS mixer with simultaneous second- and third-order distortion cancellation

A 3.1-4.8 GHz mode-1 UWB CMOS mixer that utilizes simultaneous second- and third-order distortion cancellation is presented. The scheme is based on a new derivative superposition, employing PMOS as an auxiliary FET to cancel the second- and the third-order nonlinear currents of common-source transconductance in the mixer and gives rise to low-distortion operation for a broad range of gate-source voltage. Full Volterra series analysis of the proposed transconductance is reported to examine the effectiveness of the new technique. Simulations in a 0.13 μm CMOS technology demonstrate that IIP3 and IIP2 of the proposed mixer have 18 and 10 dB improvements, respectively, compared with conventional Gilbert-type mixer with the same power consumption. The robustness of the technique has been verified by Monte Carlo analysis. The mixer has a gain of 12 dB and noise figure of 13 dB, while drawing only 2.5 mA from 1.2 V supply voltage.     

一种小型平面超宽带天线的设计与研究

提出了一种新颖的小型平面超宽带(UWB)天线.该天线由微带槽天线的基本结构变形而来,为获得超宽带频率特性,设计时馈电微带线采用了渐变结构的叉形调谐支节,金属底板的开槽设计成对称多边形.首先通过数值计算来获得最佳的天线几何尺寸,并制作了实际的样品.对天线的反射特性、方向图以及增益都进行了测试,然后利用时域有限差分(FDTD)方法计算了天线收发脉冲信号的保真度.研究结果显示该天线具有良好的超宽带特性.     

Design of 3.1–10.6 GHz ultra-wideband CMOS low noise amplifier with current reuse technique

A new low complexity ultra-wideband 3.1–10.6 GHz low noise amplifier (LNA), designed in a chartered 0.18 μm RFCMOS technology, is presented in this paper. The ultra-wideband LNA only consists of two simple amplifiers with an inter-stage inductor connected. The first stage utilizing a resistive current reuse and dual inductive degeneration techniques is used to attain a wideband input matching and low noise figure. A common source amplifier with inductive peaking technique as the second stage achieves high flat gain and wide the −3 dB bandwidth of the overall amplifier simultaneously. The implemented ultra-wideband LNA presents a maximum power gain of 15.6 dB, a high reverse isolation of −45 dB and a good input/output return losses are better than −10 dB in the frequency range of 3.1–10.6 GHz. An excellent noise figure (NF) of 2.8–4.7 dB was obtained in the required band with a power dissipation of 14.1 mW under a supply voltage of 1.5 V. An input-referred third-order intercept point (IIP3) is −7.1 dBm at 6 GHz. The chip area including testing pads is only 0.8 mm × 0.9 mm.     

超宽带低噪声放大器线性化技术综述

介绍了四种主要的超宽带低噪声放大器结构,分析了超宽带低噪声放大器主要的非线性来源,阐述了放大器线性化技术原理及研究现状,展望了线性化技术的研究方向。     

A facile method to prepare ultra-wideband anti-reflective borosilicate glass with subwavelength structure surface

Anti-reflective (AR) films have been widely investigated due to their various applications in optoelectronic devices. Among all the investigation, the manufacturing method is the most popular research field which directly determines the performance of anti-reflective films. Herein, Na₂HPO₄ and AlCl₃ mixed neutral solution were used to etch the surface of K9 glass matrix to obtain the AR structure. The morphology of SEM images indicated that subwavelength structure (SWS) was formed on the glass surface via precisely controlling the solution concentration, treatment time and temperature. Owing to the porous structure, the refractive index mutation of the interface between air and glassss can be effectively weakened. Therefore, the integral transmittance, covering the whole visible light (VIS) to near-infrared (NIR) wavelength (300–2500 nm), of glass matrix was increased remarkably to 95.77%, much higher than 87.72% of blank glass, achieving the effect of ultra-wideband anti-reflection. Particularly, the transmittance at 520 nm and 1990 nm can even reach to 99.14% and 97.86%, respectively. According to the composite analysis and reaction process, Al³⁺ ions act as both the regulator of the solution pH and part of the new-formed glass skeleton, resulting in the more uniform and regular SWS on the glass surface. Moreover, in virtue of -OH in silanol (Si-OH) on the expanded glass surface attracting more H₂O molecules or additional silylation modification on glass surface repulsing H₂O molecules, the surface characteristics of AR glass with SWS films can be easily turned between hydrophilic and hydrophobic in order to meet the requirements of various application environments. These ultra-wideband AR glasses with controllable hydrophilic and hydrophobic properties are expected to be applied in many optoelectronic fields.     

超宽带50W电子战超小型行波管设计

本文对超宽带50 W电子战超小型行波管设计进行了介绍,其主要技术难点为超宽带设计及超小型设计。通过设计行波管高效率慢波互作用系统来进行超宽带设计,使得行波管工作频带覆盖4~18 GHz,全频带(除低端边频4~5 GHz外)输出功率典型值为50 W,其中4~5 GHz频带内输出功率达到35 W,整管效率高于33%。在保障电性能的同时,通过降低工作电压实现整管各部件微型化设计,实现整管结构尺寸的大幅度压缩,实现了功率密度的大幅度提升,突破了小型化电子战整机系统安装空间的限制,适应了更高标准的电子战应用要求。     

Design of a Compact Monopole Antenna for UWB Applications

In this paper, a low cost, highly efficient and low profile monopole antenna for ultra-wideband (UWB) applications is presented. A new inverted triangular-shape structure possessing meander lines is designed to achieve a wideband response and high efficiency. To design the proposed structure, three steps are utilized to achieve an UWB response. The bandwidth of the proposed antenna is improved with changing meander lines parameters, miniaturization of the ground width and optimization of the feeding line. The measured and simulated frequency band ranges from 3.2 to 12 GHz, while the radiation patterns are measured at 4, 5.3, 6 and 8 GHz frequency bands. The overall volume of the proposed antenna is 26 × 25 × 1.6 mm3 ; whereas the FR4 material is used as a substrate with a relative permittivity and loss tangent of 4.3 and 0.025, correspondingly. The peak gain of 4 dB is achieved with a radiation efficiency of 80 to 98% for the entire wideband. Design modelling of proposed antenna is performed in ANSYS HFSS 13 software. A decent consistency between the simulated and measured results is accomplished which shows that the proposed antenna is a potential candidate for the UWB applications.     

An ultra-wideband 6–14 GHz frequency modulated continuous wave primary radar with 3 cm range resolution

This paper describes the design and verification of an ultra-wideband 6–14 GHz frequency modulated continuous wave (FMCW) primary radar system with very high range resolution. The design and measurement results of the utilized signal generator and receiver are presented. The signal generator features a 86% relative continuous tuning range and average phase noise of −106 dBc/Hz at 1 MHz offset to the carrier. The radar system utilizes a hybrid structure where the voltage controlled oscillator was fabricated using 130 nm SiGe BiCMOS technology and the lower frequency components are off-the-shelf. Free field measurements of the radar showcase an unprecedented combination of 3 cm range resolution, low phase noise and low operating frequency of 6–14 GHz for inherently higher range.