1 Volt organic transistors with mixed self-assembled monolayer/Al2O3 gate dielectrics

Control of the threshold voltage and the subthreshold swing is critical for low voltage transistor operation. In this contribution, organic field-effect transistors (OFETs) operating at 1 V using ultra-thin (∼4 nm), self-assembled monolayer (SAM) modified aluminium oxide layers as the gate dielectric are demonstrated. A solution-processed donor–acceptor semiconducting polymer poly(3,6-di(2-thien-5-yl)-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione)thieno[3,2-b]thiophene) (PDPP2TTT) is used as the active layer. It is shown that the threshold voltage of the fabricated transistors can be simply tuned by carefully controlling the composition of the applied SAM. The optimised OFETs display threshold voltages around 0 V, low subthreshold slopes (150 ± 5 mV/dec), operate with negligible hysteresis and show average saturated field-effect mobilities in excess of 0.1 cm²/V s at 1 V.     

液相自组装制备钛酸铋功能陶瓷薄膜的工艺研究

以硝酸铋和氟钛酸铵为原料,以三氯十八烷基硅烷(OTS)为模板,利用自组装单层膜(SAM)技术,在玻璃基片上制备钛酸铋薄膜.改性基板的亲水性测定与原子力显微镜(AFM)测试表明,紫外光照射使基板由疏水转变为亲水,能够对OTS-SAM起到修饰作用.借助XRD,SEM测试手段分析了前驱液的pH值、沉积条件和煅烧温度对Bi4 ...     

Mn-Co-Zn-O体系制备低阻高B型单层片式NTCR

研究了Mn-Co-O体系通过掺入适量ZnO,采用最佳的烧结温度,可制备低阻高B型NTCR(负温度系数热敏电阻),并通过XRD、SEM研究了样品Mn1.14Co1.83Zn0.03O4在不同烧结温度下的微观结构和电学特性。结果表明:Mn-Co-Zn-O体系在T=1100~1200℃很宽的温度范围可只存在尖晶石结构,同时具有高的激活能。样品Mn1.14Co1.83Zn0.03O4在烧结温度T=1100℃时存在最小电阻率,而B仍保持在4046K左右。因此,由其制成的单层片式NTCR可替代某些具有内电极的叠层器件。     

High-quality single-walled carbon nanotubes synthesis by hot filament CVD on Ru nanoparticle catalyst

We investigated the single-walled carbon nanotubes (SWCNTs) growth on Ru nanoparticle catalyst via hot filament assisted chemical vapor deposition (HFCVD) with two independent W filaments for the carbon precursor (methane) and the hydrogen dissociation respectively. The Ru nanoparticles were obtained following a two-step strategy. At first the growth substrate is functionalized by silanisation, then a self assembly of a ruthenium porphyrin complex monolayer on pyridine-functionalized metal oxide substrates. We have studied the impact of the filaments power and we optimized the SWCNTs growth temperature. The as grown SWCNTs were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. It was found that the quality, density and the diameter of SWCNTs depends on the filament and growth temperature. Results of this study can be used to improve the understanding of the growth of SWCNTs by HFCVD.     

Studies on the effect of solvents on self-assembly of thioctic acid and Mercaptohexanol on gold

In this article we investigated the effect of solvents (CCl₄, CH₃CN, DMF, ethanol, ethanol-H₂O and H₂O) on self-assembly of Thioctic acid (TA) and Mercaptohexanol (MCH) on gold by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). Electrochemical characteristics of TA and MCH self-assembled monolayers (SAMs) formed in different solvents were evaluated by inspecting the ions permeability (interfacial capacitance C and phase angle Ф_1 Hz) and electron transfer capability (current density difference Δi and charge transfer resistance R_ct). Experimental results indicated that the ability of solvents availing the ordering of SAMs was: for TA, CCl₄ > ethanol > CH₃CN > ethanol-H₂O > DMF; for MCH, H₂O > ethanol-H₂O ≈ CCl₄ > ethanol ≈ CH₃CN > DMF. Through relating the C, Ф_1 Hz, Δi and R_ct of SAMs (TA and MCH) with parameters of solvent (polarity E_T^N, solubility parameter δ and octanol/water partition coefficients logP_ow), it was found that solvents with bigger logP_ow (smaller E_T^N and δ) availed the ordering of TA-SAMs but the effect of solvents on MCH self-assembly was complex and MCH-SAMs formed in H₂O (the biggest E_T^N, δ and the smallest logP_ow) and CCl₄ (the smallest E_T^N, δ and the biggest logP_ow) were more ordered than in other solvents.     

Low operational voltage and high performance organic field effect memory transistor with solution processed graphene oxide charge storage media

Low voltage organic field effect memory transistors are demonstrated by adapting a hybrid gate dielectric and a solution processed graphene oxide charge trap layer. The hybrid gate dielectric is composed of aluminum oxide (AlO_x) and [8-(11-phenoxy-undecyloxy)-octyl]phosphonic acid (PhO-19-PA) plays an important role of both preventing leakage current from gate electrode and providing an appropriate surface energy to allow for uniform spin-casting of graphene oxide (GO). The hybrid gate dielectric has a breakdown voltage greater than 6 V and capacitance of 0.47 μF/cm². Graphene oxide charge trap layer is spin-cast on top of the hybrid dielectric and has a resulting thickness of approximately 9 nm. The final device structure is Au/Pentacene/PMMA/GO/PhO-19-PA/AlO_x/Al. The memory transistors clearly showed a large hysteresis with a memory window of around 2 V under an applied gate bias from 4 V to −5 V. The stored charge within the graphene oxide charge trap layer was measured to be 2.9 × 10¹² cm⁻². The low voltage memory transistor operated well under constant applied gate voltage and time with varying programming times (pulse duration) and voltage pulses (pulse amplitude). In addition, the drain current (I_ds) after programming and erasing remained in their pristine state after 10⁴ s and are expected to be retained for more than one year.     

Interface dipole engineering at buried organic–organic semiconductor heterojunctions

A general technique for modifying energy level alignment at organic–organic heterojunctions is introduced, and is demonstrated here for phenyl-C₆₁-butyric acid methyl ester (PCBM) and N,N′-Di-[(1-naphthyl)-N,N′-diphenyl]-1,1′-biphenyl)-4,4′-diamine (α-NPD). An ultra-thin layer (∼1 nm) of TiO₂ is used as an adhesion template to attach a self-assembled monolayer of dipolar phosphonate (PA) molecules to the lower interface of a two-stack ensemble. This modification induces shifts in the vacuum level and work function over ∼1.0 eV depending on the molecular dipole moment of the PA, which in turn modifies the electronic level alignment across the organic heterojunction interface by up to 0.5 eV.     

Interface dipole: Effects on threshold voltage and mobility for both amorphous and poly-crystalline organic field effect transistors

We report a detailed comparison on the role of a self-assembled monolayer (SAM) of dipolar molecules on the threshold voltage and charge carrier mobility of organic field-effect transistor (OFET) made of both amorphous and polycrystalline organic semiconductors. We show that the same relationship between the threshold voltage and the dipole-induced charges in the SAM holds when both types of devices are fabricated on strictly identical base substrates. Charge carrier mobilities, almost constant for amorphous OFET, are not affected by the dipole in the SAMs, while for polycrystalline OFET (pentacene) the large variation of charge carrier mobilities is related to change in the organic film structure (mostly grain size).     

Investigations on the monolayer structure of thiol SAMs and the influence of conjugated π-bonds on the electronic molecular conductivity

Thiols have been in the focus of recent research because of their capability to form self assembled monolayers (SAM) on noble and semi-noble metals opening a new field of fundamental research and its application in various branches, as e.g. in nano technology. In this paper, the investigation of SAMs of six specially tailored thiols with an aromatic head group on a preferentially (1 1 1) orientated Au-surface are described with special interest in their structure and the electronic conductivity in dependence on the number of conjugated π-bonds in the chain group. Potentiodynamic polarization curves in 0.5 M KOH with and without [Fe(CN)₆]^3−/4− were used to obtain information on the quality and conductivity of the SAMs while scanning tunneling microscopy (STM) and XPS were used for investigations on the monolayer structure. Additionally molecular dynamic calculations were performed to check the possibility and reliability of these calculations to predict the arrangement of the thiol molecules within the SAMs. The electron conductivity of these SAMs rises significantly with the amount of conjugated π-bonds. A naphthalene head group causes the formation of SAMs with a typical herringbone structure whereas anthraquinone leads to a mixture of parallel and herringbone arrangements.     

单层双通道圆环链刮板输送机

介绍了单层双通道刮板输送机的工作原理、结构、主要技术参数,并通过主要部件的特征视图,详细说明了主要部件的特点,供研究参考。