全文获取类型
收费全文 | 516篇 |
免费 | 51篇 |
国内免费 | 34篇 |
专业分类
电工技术 | 8篇 |
综合类 | 10篇 |
化学工业 | 13篇 |
金属工艺 | 4篇 |
机械仪表 | 11篇 |
建筑科学 | 2篇 |
矿业工程 | 1篇 |
能源动力 | 7篇 |
轻工业 | 2篇 |
石油天然气 | 1篇 |
武器工业 | 1篇 |
无线电 | 292篇 |
一般工业技术 | 48篇 |
冶金工业 | 4篇 |
原子能技术 | 4篇 |
自动化技术 | 193篇 |
出版年
2024年 | 1篇 |
2023年 | 2篇 |
2021年 | 7篇 |
2020年 | 5篇 |
2019年 | 11篇 |
2018年 | 8篇 |
2017年 | 17篇 |
2016年 | 17篇 |
2015年 | 21篇 |
2014年 | 30篇 |
2013年 | 27篇 |
2012年 | 38篇 |
2011年 | 45篇 |
2010年 | 42篇 |
2009年 | 42篇 |
2008年 | 52篇 |
2007年 | 36篇 |
2006年 | 41篇 |
2005年 | 22篇 |
2004年 | 24篇 |
2003年 | 13篇 |
2002年 | 16篇 |
2001年 | 24篇 |
2000年 | 13篇 |
1999年 | 10篇 |
1998年 | 7篇 |
1997年 | 9篇 |
1996年 | 4篇 |
1995年 | 6篇 |
1994年 | 3篇 |
1993年 | 5篇 |
1992年 | 2篇 |
1991年 | 1篇 |
排序方式: 共有601条查询结果,搜索用时 15 毫秒
11.
Shunpei Yamazaki Takuya Hirohashi Masahiro Takahashi Shunsuke Adachi Masashi Tsubuku Junichi Koezuka Kenichi Okazaki Yohsuke Kanzaki Hiroshi Matsukizono Seiji Kaneko Shigeyasu Mori Takuya Matsuo 《Journal of the Society for Information Display》2014,22(1):55-67
Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c‐axis alignment, its a‐axis and b‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs. 相似文献
12.
Based on Al induced crystallization (AIC) method, influences of different material structures on formation and characteristics of ploy-silicon thin films were studied and optimized. Al-Si films on glass with different structures (Si/Al/Glass, Al/Si/Glass, Si/Al/…/Si/Al/Glass) were deposited on glass substrates by sputtering method. All samples were annealed for MIC with varied time processes under 500℃ N2 environment. X-ray diffraction test and scanning electron microscope were adopted to characterize cryst... 相似文献
13.
Development of flexible displays using back‐channel‐etched In–Sn–Zn–O thin‐film transistors and air‐stable inverted organic light‐emitting diodes 下载免费PDF全文
Mitsuru Nakata Genichi Motomura Yoshiki Nakajima Tatsuya Takei Hiroshi Tsuji Hirohiko Fukagawa Takahisa Shimizu Toshimitsu Tsuzuki Yoshihide Fujisaki Toshihiro Yamamoto 《Journal of the Society for Information Display》2016,24(1):3-11
We developed flexible displays using back‐channel‐etched In–Sn–Zn–O (ITZO) thin‐film transistors (TFTs) and air‐stable inverted organic light‐emitting diodes (iOLEDs). The TFTs fabricated on a polyimide film exhibited high mobility (32.9 cm2/Vs) and stability by utilization of a solution‐processed organic passivation layer. ITZO was also used as an electron injection layer (EIL) in the iOLEDs instead of conventional air‐sensitive materials. The iOLED with ITZO as an EIL exhibited higher efficiency and a lower driving voltage than that of conventional iOLEDs. Our approach of the simultaneous formation of ITZO film as both of a channel layer in TFTs and of an EIL in iOLEDs offers simple fabrication process. 相似文献
14.
Suehye Park Edward Namkyu Cho Ilgu Yun 《Journal of the Society for Information Display》2013,21(8):333-338
Amorphous In–Ga–Zn–O thin‐film transistors (TFTs) have attracted increasing attention due to their electrical performance and their potential for use in transparent and flexible devices. Because TFTs are exposed to illumination through red, green, and blue color filters, wavelength‐varied light illumination tests are required to ensure stable TFT characteristics. In this paper, the effects of different light wavelengths under both positive and negative VGS stresses on amorphous In–Ga–Zn–O TFTs are investigated. The TFT instability that is dependent on optical and electrical stresses can be explained by the charge trapping mechanism and interface modification. 相似文献
15.
Youn‐Gyoung Chang Seong‐Hee Nam Nam‐Kook Kim Yun‐Ho Kook Jinook Kim Soon‐Sung Yoo Chang‐Dong Kim In‐Byeong Kang In‐Jae Chung 《Journal of the Society for Information Display》2009,17(4):301-307
Abstract— Recently, potential breakthrough technologies for low‐cost processing of TFT‐LCDs and new process developments for flexible‐display fabrication have been widely studied. A roll‐printing process using etch‐resist material as a replacement for photolithographic patterning was investigated. The characterization of the properties of patterns formed in roll printing, a method to fabricate cliché plates for fine patterns, and the design of a new formulation for resist printing ink is reported. The pattern position accuracy, which is one of the most important issues for the successful application of printing processes in display manufacturing was studied and how it can be improved by optimizing the blanket roll structure is explained. New design rules for the layout of the thin‐film‐transistor array was derived to improve the compatibility of roll printing. As a result, a prototype 15‐in.‐XGA TFT‐LCD panel was fabricated by using printing processes to replace all the photolithographic patterning steps conventionally used. 相似文献
16.
Hyun‐Sang Park Seon‐Beom Ji Min‐Koo Han Jae‐Sic Lee Chi‐Woo Kim Kwang‐Soo Choi 《Journal of the Society for Information Display》2009,17(8):681-686
Abstract— A new digital ambient‐light sensor system is presented which employs two linear light sensors with different sensitivities and automatically adjusts the sensitivity based on the illumination condition. The adaptation mechanism allows a very wide range of light intensity to be detected, and the input dynamic range of the system is substantially improved from 22.5 to 45.1 dB. The proposed method does not require any additional precision bits for output data. Due to the small number of the output bits and the simple conversion process, the system can be easily integrated on the display panel. 相似文献
17.
Bong Hyun You Byoung Jun Lee Sang Youn Han Seiki Takahashi Brian H. Berkeley Nam Deog Kim Sang Soo Kim 《Journal of the Society for Information Display》2009,17(2):87-94
Abstract— A touch‐screen‐panel (TSP) embedded 12.1‐in. LCD employing a standard existing a‐Si:H TFT‐LCD process has been successfully developed. Compared with conventional external touch‐screen panels, which use additional components to detect touch events, the new internal TSP exhibits a clearer image and improved touch feeling, as well as increased sensing speed using discrete sensing lines to enable higher‐speed sensing functions including handwriting. The new internal digital switching TSP can be fabricated with low cost because it does not require any additional process steps compared to a standard a‐Si:H TFT‐LCD. 相似文献
18.
Jae Kyeong Jeong Jong Han Jeong Hui Won Yang Tae Kyung Ahn Minkyu Kim Kwang Suk Kim Bon Seog Gu Hyun‐Joong Chung Jin‐Seong Park Yeon‐Gon Mo Hye Dong Kim Ho Kyoon Chung 《Journal of the Society for Information Display》2009,17(2):95-100
Abstract— A full‐color 12.1‐in.WXGA active‐matrix organic‐light‐emitting‐diode (AMOLED) display was, for the first time, demonstrated using indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) as an active‐matrix backplane. It was found that the fabricated AMOLED display did not suffer from the well‐known pixel non‐uniformity in luminance, even though the simple structure consisting of two transistors and one capacitor was adopted as the unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductors. The n‐channel a‐IGZO TFTs exhibited a field‐effect mobility of 17 cm2/V‐sec, threshold voltage of 1.1 V, on/off ratio >109, and subthreshold gate swing of 0.28 V/dec. The AMOLED display with a‐IGZO TFT array is promising for large‐sized applications such as notebook PCs and HDTVs because the a‐IGZO semiconductor can be deposited on large glass substrates (larger than Gen 7) using the conventional sputtering system. 相似文献
19.
Yoshiki Nakajima Tatsuya Takei Toshimitsu Tsuzuki Mitsunori Suzuki Hirohiko Fukagawa Toshihiro Yamamoto Shizuo Tokito 《Journal of the Society for Information Display》2009,17(8):629-634
Abstract— A 5.8‐in. wide‐QQVGA flexible color active‐matrix organic light‐emitting‐diode (AMOLED) display consisting of organic thin‐film transistors (OTFTs) and phosphorescent OLEDs was fabricated on a plastic film. To reduce the operating voltage of the OTFTs, Ta2O5 with a high dielectric constant was employed as a gate insulator. Pentacene was used for the semiconductor layer of the OTFTs. This layer was patterned by photolithography and dry‐etched using a dual protection layer of poly p‐xylylene and SiO2 film. Uniform transistor performance was achieved in the OTFT backplane with QQVGA pixels. The RGB emission layers of the pixels were formed by vacuum deposition of phosphorescent small molecules. The resulting display could clearly show color moving images even when it was bent and operated at a low driving voltage (below 15 V). 相似文献
20.
Chang‐Wook Han Yoon‐Heung Tak In Byeong Kang Byung‐Chul Ahn In Jae Chung 《Journal of the Society for Information Display》2009,17(2):101-106
Abstract— An improved AMOLED with an a‐Si TFT backplane based on a unique structure is reported. The new structure is refered to as a dual‐plate OLED display (DOD). While a top‐emission OLED array is directly fabricated on a TFT backplane, the DOD consists of an upper OLED substrate and a lower TFT substrate, which are independently fabricated. Because the OLED substrate, which is fabricated through the process flow of bottom emission, is attached to the TFT substrate, the light is emitted in the opposite direction to the TFT backplane. The DOD enables the design of large‐sized TFTs and a complicated pixel circuit. It can also not only achieve higher uniformity in luminance in large‐sized displays due to the low electrical resistance of the common electrode, but also wider viewing angles. 相似文献