氢等离子体辅助固相晶化多晶硅薄膜的初步研究

提出一种氢等离子辅助固相晶化(hydrogen plasma assisted solid phase crystallization,H-SPC)多晶硅的新颖技术。这一晶化技术能够明显缩短晶化时间,同时有效钝化多晶硅薄膜的缺陷态。首先对氢等离子辅助SPC技术与传统SPC技术进行比较分析,进而研究了晶化过程中各种工艺条件对多晶硅晶化质量的影响并进行了物理机制的初步分析。     

棒状纳米ZnO薄膜晶体管效应的测定

分别采用水热法和微乳法制得了两种直径为10～40nm和60～70nm的棒状纳米ZnO材料;然后将制得的纳米材料乙醇溶液旋涂到石英基片上,将其中一部分旋涂膜进行煅烧,最后将经过煅烧和未经过煅烧的旋涂膜基片采用top-contact的方法镀上电极制成薄膜晶体管进行场效应的测定;实验表明:对于直径不同和同种样品旋涂膜经不同处理的场效应参数存在明显的差异,特别是电子迁移率,直径较大的未经煅烧的纳米ZnO旋涂膜的电子迁移率可以达到μ=156cm2V-1s-1。     

AFFS技术在大尺寸LCD-TV的进展（英文）

最近我们发展了AFFS技术,做出了32″LED背光源的LCD-TV,色域达到了105%,对比度1200：1,在140°所有视角的对比度达到了100以上,我们采用双轴补偿膜大大提高了颜色漂移的特性。这些光学特性结果的取得是与工艺制作、光学材料的优化、新AFFS像素的设计分不开的。     

Highly reliable oxide‐semiconductor TFT for AMOLED displays

Abstract— The stability and reliability of oxide‐semiconductor TFTs were investigated. The contact material to the oxide semiconductor affected the thermal stability of the TFT, and a molybdenum‐contact source/drain showed good stability. And the passivating film and TFT structure affected the stability against bias stress and humidity stress, and dc‐sputtered Al²O³ passivation and fully covered channel structure with an etching stopper or source/drain showed good reliability. Moreover, high photo‐stability was confirmed by the bias‐enhanced photo‐irradiation stress test. An 11.7‐in.‐diagonal qHD AMOLED display was demonstrated to provide an applicable solution for a large‐sized OLED and an ultra‐high‐definition LCD‐TV mass production.     

Microcrystalline‐silicon thin films by physical vapor deposition for wide‐area low‐temperature polysilicon production

A sputtered microcrystalline‐silicon thin film deposited on unannealed Corning Code 1737 glass has been shown to transform to polycrystalline material after excimer‐laser annealing at low energy densities, and below the full‐melt threshold. The homogeneous large‐grain polysilicon films obtained show promise for high‐yield manufacturing of large‐area LTPS displays. The material properties of the films will be presented and the properties of devices fabricated in the films will be discussed.     

Multi-material gate poly-crystalline thin film transistors: Modeling and simulation for an improved gate transport efficiency

In this work, a two-dimensional potential distribution formulation is presented for multi-material gate poly-crystalline silicon thin film transistors. The developed formulation incorporates the effects due to traps and grain-boundaries. In short-channel devices, short-channel effects and drain-induced barrier lowering (DIBL) effect exists, and are accounted for in the analysis. The work aims at the reduction of DIBL effect and grain-boundary effects i.e. to reduce the potential barriers generated in the channel by employing gate-engineered structures. A study of work-functions and electrode lengths of multi-material gate electrode is done to suppress the potential barriers, hot electron effect and to improve the carrier transport efficiency. Green's function approach is adopted for the two-dimensional potential solution. The results obtained show a good agreement with simulated results, thus, demonstrating the validity of our model.     

三端子有源矩阵液晶显示器

主要介绍了ＴＦＴ特别是ａ－ＳｉＴＦＴ矩阵寻址的液晶显示器的结构、制作工艺、工作原理、动态和驱动特性，并着重对其器件参数的选择进行了分析，为今后器件的设计提供了理论依据。同时也介绍了其它三端子方式ＡＭＬＣＤ的特点及所存在的问题。     

平面显示面板生产有机工业废水的回用水处理技术

该文采用混凝沉淀、MBR和反渗透组合工艺装置针对平面显示面板生产有机废水进行深度处理。结果表明通过混凝沉淀,有机废水中的 COD能降低约10％,并减轻后续 MBR膜的有机物污堵。MBR装置出水能保持良好水质（TOC ＜10 mg/L、SDI15＜3）,很适合采用反渗透进行进一步处理。通过反渗透装置进行深度处理后,出水能达到TOC＜1 mg/L、电导率＜85μs/cm,可作为原水直接回用到超纯水制备系统。     

Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing

We report the fabrication and electrical characteristics of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a polymer gate dielectric prepared by spin coating on a glass substrate at different oxygen partial pressure values. The transmittance of the deposited polymer film was greater than 90% at 600 nm a-IGZO thin films were deposited on glass substrates using RF magnetron sputtering at different oxygen partial pressure values. The a-IGZO TFTs were prepared by rapid thermal annealing at 350 °C for 10 min at a 0.2% oxygen partial pressure. It was observed that a-IGZO TFTs with an active channel layer exhibited enhanced mode operation, a threshold voltage of 1 V, an on-off current ratio of 10³, and a field-effect mobility of 18 cm²/Vs.     

Effects of neutral particle beam on nano-crystalline silicon thin films, with application to thin film transistor backplane for flexible active matrix organic light emitting diodes

A novel deposition process for nano-crystalline silicon (nc-Si) thin films was developed using neutral beam assisted chemical vapor deposition (NBaCVD) technology for the application of the thin film transistor (TFT) backplane of flexible active matrix organic light emitting diode (AMOLED). During the formation of a nc-Si thin film, the energetic particles enhance nano-sized crystalline rather microcrystalline Si in thin films. Neutral Particle Beam (NPB) affects the crystallinity in two ways: (1) NPB energy enhances nano-crystallinity through kinetic energy transfer & chemical annealing, and (2) heavier NPB (such as Ar) induces damage & amorphization through energetic particle impinging. Nc-Si thin film properties effectively can be changed by the reflector bias. As increase of NPB energy limits growing the crystalline, the performance of TFT supports this NPB behavior. The results of nc-Si TFT by NBaCVD demonstrate the technical potentials of neutral beam based processes for achieving high stability and reduced leakage in TFT backplanes for AMOLEDs.