脉冲偏压电弧离子镀CrAlN薄膜研究

在高速钢和不锈钢基体上用脉冲偏压电弧离子镀技术制备了CrAlN薄膜,研究了脉冲偏压对薄膜成分、结构和性能的影响,并进行了900℃下的高温抗氧化性能检测。结果表明,薄膜中Al的相对含量随着脉冲偏压的增加而降低;薄膜的相结构由立方CrN和Al相组成;薄膜的硬度随脉冲偏压的增加而增大,在偏压幅值为-500 V时,硬度可达21.5 GPa;薄膜具有高达70 N的膜基结合力;此外,薄膜在900℃的大气中保温10 h,没有出现明显的氧化现象;在合成的三种薄膜中,在脉冲偏压为-500 V×40 kHz×40%时的薄膜具有最好的综合性能。     

利用瞬态抑制二极管实现高性能稳压电源

在稳压电源设计中 ,如何实现高严酷等级的高速脉冲群抑制能力是一个长期以来难以克服的实际问题 .本文根据实际设计经验 ,介绍一种简单实用的设计方案 .该方案利用瞬态抑制二极管的快速泄放特性 ,大大地提供了高速脉冲群抑制能力 .实际测试和应用表明 ,该设计方案具有良好的工作性能     

我国第一座脉冲堆脉冲与方波运行试验研究

本文介绍了我国第一座脉冲反应堆的脉冲和方波运行试验的设备和试验结果,其中重点介绍了引入不同瞬发反应性的脉冲试验研究以及不同初始功率和不同发射速度下的脉冲试验研究。对方波运行试验也进行了初步的探讨。     

Behaviour of the spin-spin relaxation time for natural rubber vulcanizates under large deformation

The spin-spin relaxation time, T₂, for DCP-cured natural rubber with various crosslink densities, v_e, has been measured under various deformation. T₂ is separated into two components: one is the long T₂ component, T_2L, for the mobility of amorphous network chains, the other is the short one, T_2S, for that of the strain-induced crystalline chains. T_2L decreased exponentially with increasing extension ratio,α, and the decreasing rate was more remarkable with increasing v_e. The α and v_e dependence of T_2L has been quantitatively explained by the equation experimentally derived by Nishi et al.T_2L under various extension increased and became almost constant with increasing temperature, while the corrected fraction of T_2S, T_2S (%), gradually decreased. The apparent melting point, T_m, at which the corrected T_2S (%) was zero under various deformation was determined. The α dependence of T_m, has been discussed by using Flory's equation.     

Reduction of droplet of tantalum oxide using double slit in pulsed laser deposition

We developed a double slit method in order to reduce droplets that were a problem in pulsed laser deposition (PLD) of tantalum oxide. The tantalum oxide films were deposited using KrF excimer laser ablation of a Ta target in 5 mass% O₃ at a pressure of 10 Pa. Stoichiometric and dense films with few droplets were obtained at a pressure of 10 Pa. Without double slit, as the laser pulses increased, the number of droplets containing rich metal on the film gets increased and its size became larger, and the surface morphology of the target also became more and more rugged. It was found that the number of droplet could be controlled by changing the initial roughness of the target. The number of droplets with a diameter size of under 1 μm was decreased to 1/10 of their sizes. Droplets larger than 3 μm, which mostly affect the corrosion resistance and hardly increase even beyond the laser pulses of 100 000. It is evident from this study that the double slit is a very effective method for reducing the droplets, which are otherwise a problem often seen in film production by PLD.     

Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

Aluminum nitride (AlN) films were deposited using pulsed laser deposition (PLD) onto sapphire (0001) substrates with varying processing conditions (temperature, pressure, and laser fluence). We have studied the dependence of optical properties, structural properties and their correlations for these AlN films. The optical transmission spectra of the produced films were measured, and a numerical procedure was applied to accurately determine the optical constants for films of non-uniform thickness. The microstructure and texture of the films were studied using various X-ray diffraction techniques. The real part of the refractive index was found to not vary significantly with processing parameters, but absorption was found to be strongly dependent on the deposition temperature and the nitrogen pressure in the deposition chamber. We report that low optical absorption, textured polycrystalline AlN films can be produced by PLD on sapphire substrates at both low and high laser fluence using a background nitrogen pressure of 6.0 × 10^− 2 Pa (4.5 × 10^− 4 Torr) of 99.9% purity.     

Effects of periodicity and oxygen partial pressure on the crystallinity and dielectric property of artificial SrTiO3/BaTiO3 superlattices integrated on Si substrates by pulsed laser deposition method

Epitaxial SrTiO₃(STO)/BaTiO₃(BTO) artificial superlattices have been grown on TiN buffered Si (001) substrates by pulsed laser deposition method and the effects of stacking periodicity and processing oxygen partial pressure on their crystallinity and dielectric properties were studied. The crystal orientation, epitaxy nature, and microstructure of STO/BTO superlattices were investigated using X-ray diffraction and transmission electron microscopy. The TiN buffer layer and superlattice thin films were grown with cube-on-cube epitaxial orientation relationship of [110](001)_films∣∣[110](001)_TiN∣∣[110](001)_Si. The c-axis lattice parameter of the STO/BTO superlattice decreased from 0.412 nm to 0.406 nm with increasing oxygen partial pressure and the dielectric constants, measured at the frequency of 100 kHz at room temperature, of the superlattices with 2 nm/2 nm periodicity increased from 312 at 1 × 10^− 5 Torr to 596 at 1 × 10^− 3 Torr. The dielectric constants of superlattices grown at oxygen partial pressure of 1 × 10^− 3 Torr increased from 264 to 678 with decreasing periodicity of the superlattices from 10 nm/10 nm to 1 nm/1 nm.     

Electrical conduction mechanisms of metal nanoclusters embedded in an amorphous Al2O3 matrix

We present the synthesis and electrical characterization of amorphous nanocomposite layers made of metallic nanoclusters embedded in an alumina matrix (nc-Co:Al₂O₃). The nanostructured materials were fabricated using a pulsed laser deposition (PLD)-derived method based on a nano-cluster generator coupled with a conventional PLD system for host medium co-deposition. The films were subjected to a detailed structural study carried out using high-resolution transmission electron microscopy and atomic force microscopy. The clusters inserted in the alumina matrix are metallic, well crystallized and possess an fcc structure with an average diameter centered at ∼ 2 nm. Dielectric constant and electrical conduction mechanisms of nc-Co:Al₂O₃ layers integrated in metal-insulator-metal capacitive structures were studied for different doping levels and for a broad temperature range (303-473 K). It was concluded that the dielectric constant in the films depends on the doping levels while the major electrical conduction mechanisms are best described by the space charge limited currents formalism, in which the current density J on an applied voltage V follow a power-law dependence (J ∼ Vⁿ) at applied voltages higher than ∼ 2 V. Such composite may find immediate applications as dielectric layers with controlled discharging conduction paths in Radio Frequency-Micro-Electro-Mechanical Systems capacitive structures.     

目标反射特性与激光测距回波强度关系的研究

激光测距方程的表达形式与目标反射模型的选取有关.不同文献中的测距方程不尽相同,通过对不同反射模型测距方程的推导,指出不同文献中测距方程的联系及测距方程差异产生的原因.用数值模拟的方法,直观给出不同目标模型回波信号的差别及其强度随探测距离、仰角的变化关系.在设计脉冲激光测距仪时,模拟结果可以帮助选取合适的参数.