论携号转网行为的私法规制

以电信用户入网协议为切入点,电信用户的携号转网行为应受到《合同法》《消费者权益保护法》等私法规范的保护与限制。该行为引起的格式条款解释、合同终止、违约责任、损失赔偿等问题,不能仅靠《电信条例》等公法规范来调整。应当积极引导广大消费者用户以私法领域相关规定为依据,转变争议解决思维,拓宽纠纷处理途径,合理选择维权手段,以保护自身合法民事权益,与行业监管部门共同推动电信行业有序发展。     

基于设备改造的选煤厂介质消耗控制研究

同忻选煤厂采用重介质选煤技术,磁性介质的消耗较大,为此,相关技术人员针对介质回收系统设备进行了改造设计。改造后,设备运行稳定,介质消耗降低,提高了原煤的分选效率,创造了较好的安全经济效益。     

注塑机料筒温度调控和计算机仿真研究

利用模糊控制和比例积分微分(PID)控制相结合的手段对注塑机料筒温度进行了控制,同时以Matlab 6.0软件为仿真平台,对料筒温度控制进行了模拟仿真研究。实验发现,在注塑机料筒升温过程中利用CHR整定的PID控制手段和模糊控制手段,恒温过程中利用人工整定的PID控制手段,可保证快速的料筒升温响应速率和稳定的保温过程。通过实际注塑实验对该仿真结果进行了验证,在十组实验中,料筒温度误差不超过2%,产品翘曲变形量不超过0.059 mm。     

Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000℃

The effect of the high-temperature helium irradiation on microstructural evolution of 3C-SiC was investigated by the combination of Raman spectroscopy, conventional transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). 3C-SiC wafers were irradiated with 130 keV He⁺ ions at fluences of 2 × 10¹⁶ He⁺/cm², 4 × 10¹⁶ He⁺/cm² and 2 × 10¹⁷ He⁺/cm² at 1000℃. Helium bubbles, dislocation loops, and their interaction with the stacking faults were focused on and characterized by TEM. Helium bubbles preferentially nucleate and grow on stacking faults. Bubble links on the (100) plane in 3C-SiC are formed. In addition, stacking faults can effectively trap irradiation-induced lattice defects to enhance their recovery. The type of irradiation-induced lattice defects and elemental distribution are also investigated. The research results are valuable for the 3C-SiC used in the advanced nuclear energy systems.     

High-resolution FIB-TEM-STEM structural characterization of grain boundaries in the high dielectric constant perovskite CaCu3Ti4O12

In this work, the grain boundaries composition of the polycrystalline CaCu₃Ti₄O₁₂ (CCTO) was investigated. A Focused Ion Beam (FIB)/lift-out technique was used to prepare site-specific thin samples of the grain boundaries interface of CCTO ceramics. Scanning transmission electron microscopy (STEM) coupled with energy dispersive X-ray spectrometry (EDXS) and Electron Energy Loss Spectroscopy (EELS) systems were used to characterize the composition and nanostructure of the grain and grain boundaries region. It is known that during conventional sintering, discontinuous grain growth occurs and a Cu-rich phase appears at grain boundaries. This Cu-rich phase may affect the final dielectric properties of CCTO but its structure and chemical composition remained unknown. For the first time, this high-resolution FIB-TEM-STEM study of CCTO interfacial region highlights the composition of the phases segregated at grain boundaries namely CuO, Cu₂O and the metastable phase Cu₃TiO_4.     

剂油比对煤焦油沥青质加氢过程的影响

以中低温煤焦油沥青质为原料,采用NiMoW/γ-Al_2O_3商业催化剂,在反应温度380℃、反应压力8 MPa和反应时间1.5 h条件下,分别在不同剂油质量比(1∶25、1∶20、1∶15、1∶10)条件下进行加氢实验,通过采用元素分析、FT-IR、XRD、~1H-NMR和XPS等分析表征手段,考察不同剂油质量比对中低温煤焦油沥青质加氢转化过程的影响。结果表明,随着剂油质量比的增加,沥青质转化率提高,加氢产物分布也发生大幅变化,沥青质和芳香分轻质化转化为饱和分。但随着剂油质量比的进一步提高,同时也发生了更多的裂化反应和缩合反应,剂油质量比在合适范围能够很好地起到加氢轻质化且抑制结焦的效果。     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.