How to accelerate green technology diffusion? Directed technological change in the presence of coevolving absorptive capacity

The time window for effective climate change mitigation is closing. Technological change needs to be accelerated to limit global warming to a manageable level. Path dependence of technological change is one explanation for sluggish diffusion of green technologies. Firms acquire capital that differs by technology type and build up type-specific technological know-how needed to use capital efficiently. Path dependence emerges from cumulative knowledge stocks manifested in the productivity of supplied capital and firms’ capabilities. Increasing returns arise from induced innovation feedbacks and learning by doing. Relatively lower endowments with technological knowledge are a barrier to diffusion for new technologies. This paper shows how the evolution of relative stocks of technological knowledge explains different shapes of diffusion curves. Using an eco-technology extension of the macroeconomic agent-based model Eurace@unibi, it is shown how the effectiveness of different climate policies depends on the type and strength of diffusion barriers. Environmental taxes can outweigh lower productivity and subsidies perform better if lacking capabilities hinder firms to adopt a sufficiently mature technology.     

Single-Crystalline TiO2(B) Nanobelts with Unusual Large Exposed {100} Facets and Enhanced Li-Storage Capacity

The {100} facet of single-crystalline TiO₂(B) is an ideal platform for inserting Li ions, but it is hard to be obtained due to its high surface energy. Here, the single-crystalline TiO₂(B) nanobelts from H₂Ti₃O₇ with nearly 70% {100} facets exposed are synthesized, which significantly enhances Li-storage capacity. The first-principle calculations demonstrate an ab in-plane 2D diffusion through the exposed {100} facets. As a consequence, the nanobelts can significantly accommodate Li ions in LiTiO₂ formula with specific capacity up to 335 mAh g⁻¹, which is in good agreement with the electrochemical characterizations. Coating with conductive and protective poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate), the cut-off discharge voltage is as low as 0.5 V, leading to a capacity of 160.7 mAh g⁻¹ after 1500 cycles with a retention rate of 66% at 1C. This work provides a practical strategy to increase the Li-ion capacity and cycle stability by tailoring the crystal orientation and nanostructures.     

基于MFSK的多载波水声通信系统及实验研究

本文在深入研究水声通信信道特性及多载波关键技术的基础上,设计并研制了基于M FSK的高速自适应多载波水声通信系统,并进行了湖上实验。理论分析、仿真及湖上试验结果表明:基于M FSK的多载波水声通信系统,多径抑制有效,对同步的精确度要求不高,性能稳健,更适合于恶劣水声通信环境下、中距离(10~30km)较高数据率多载波通信系统,易于工程实现,具有良好的应用前景。     

铝钛共渗钢的研制与工业应用

介绍了开发的铝钛共渗工艺及其特点,该工艺可根据需要调整渗剂配方,实现渗钛或铝钛共渗.研究了一种封闭剂,重点解决了渗剂高温氧化烧结问题,使渗层质量优良、性能稳定.描述了铝钛共渗层的特征和焊接性能及耐腐蚀效果.在中国石化扬子石油化工股份有限公司炼油厂的应用表明,铝钛共渗钢具有良好的抗低温H2S腐蚀的能力,并具有优良的耐冲刷、耐磨蚀性能.     

弯曲性分叉河道中污染物扩散性的初步研究

弯曲性分叉河道中水流特征复杂,对污染物扩散有很大影响。为了定量分析其水流特征对污染物扩散的影响,采用有限元方法求解弯曲性分叉河道中的污染物扩散数学模型,研究其中污染物扩散的状况。主要针对河道回流、绕流对污染物扩散的影响进行了详细数值模拟计算,并分别给出了可视化结果及平均的扩散距离。计算结果表明:边界层稍微减弱污染物的扩散,弯道分离使污染物扩散呈现多向扩散,而回流和绕流尾迹区使污染物很难扩散,从而有利于泄漏污染物的收集和集中治理。     

基于单片机加压控制的PCD复合片真空扩散焊接

文章针对普通钎焊的聚晶金刚石钻头剪切强度不高，提出了采用单片机加压控制的PCD复合片真空扩散焊接的设计思想，在对原真空扩散焊机液压改造的基础上给出如何由单片机控制加压的电路和程序流程设计。实际应用表明，该技术经济实用，有较好的经济效益。     

用AFM导电探针在n-Si(111)表面进行纳米加工的机理研究

本文介绍了在AFM针尖与氢钝化硅表面之间施加电场作用对硅表面进行修饰的纳米加工方法，重点讨论了加工机理。实验考虑了样品的表面状态，周围大气状况，所加电压的极性、大小和加压方式等影响纳米加工的因素。对机理的研究表明，针尖和样品之间发生的是场致电子发射而非热电子发射，电流热效应增强粒子的扩散能力，提高了电化学反应速度。最后给出了电场诱导阳极氧化扩散增强的加工机理。     

求解二维结构-声耦合问题的一种直接方法

本文基于传递矩阵法(TMM)和虚拟边界元法(VBEM)，提出了一种求解在谐激励作用下二维结构-声耦合问题的直接法。文中对任意形状的二维弹性环建立了一阶非齐次运动微分方程组，便于用齐次扩容精细积分法求解，对于含有任意形状孔穴的无穷域流体介质的Helmholtz外问题，采用复数形式的Burton-Miller型组合层势法建立了虚拟边界元方程，保证了声压在全波数域内存在唯一解。根据叠加原理并结合最小二乘法，提出了一种耦合方程的直接解法，由于该方法不存在迭代过程，因而具有较高的计算精度和效率。文中给出了二个典型弹性环在集中谐激励力作用下声辐射算例，计算结果表明本文方法较通常采用的混合FE／BE法更为有效。     

复合材料手动扫描超声特征成像检测

研究了复合材料手动扫描超声特征成像检测，通过对超声检测信号的全波列采集与处理，实现了A，B，C扫描成像；相位特征成像；当量特征成像；超声层析技术和超声频谱分析技术。该系统已经在复合材料的检测上得到了良好的应用。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.