Deep‐UV Photochemistry and Patterning of (Aminoethylaminomethyl)phenethylsiloxane Self‐Assembled Monolayers

The 193 nm photochemistry of (aminoethylaminomethyl)phenethylsiloxane (PEDA) self‐assembled monolayers (SAMs) under ambient conditions is described. The primary photodegradation pathways at low exposure doses (< 100 mJ cm^–2) are benzylic C–N bond cleavage (ca. 68 %), with oxidation of the benzyl C to the aldehyde, and Si–C bond cleavage (ca. 32 %). Amine‐containing photoproducts released from the SAM during exposure remain physisorbed on the surface, where they undergo secondary photolysis leading to their complete degradation and removal after ca. 1200 mJ cm^–2. NaCl(aq) post‐exposure rinsing removes the physisorbed materials, showing that degradation of the original PEDA species (leaving Si–OH) is substantially complete after ca. 450 mJ cm^–2. Consequently, patterned, rinsed PEDA SAMs function as efficient templates for fabrication of high‐resolution, negative‐tone, electroless metal and DNA features with good selectivity at low dose (i.e., ca. 400 mJ cm^–2) via materials grafting to the intact amines remaining in the unirradiated PEDA SAM regions.     

Powder Deposition in Three Parallel-Oriented Dies of Different Shapes

Uniformity of bulk density distribution during the die filling process is required to minimize quality problems, such as distortion and cracking, for powder compacts. Understanding the die filling process is necessary in ensuring a uniform powder deposition. The second-generation pressure deposition tester (PDT-II) was used to investigate the deposition process and final pressure distribution of powder filling in toroidal, cylindrical, and E-shaped dies. All tests were conducted using a spray-dried free-flowing granular powder. The results indicated that for toroidal dies: (1) the area around 0° orientation (the leeward end) had the highest pressure values (1186.7 to 2498.0 Pa), with the average pressure values of the remaining area 353.7-648.0 Pa; (2) the pressure distribution was symmetrical about the centerline parallel to the feed shoe movement direction; (3) the highest feed shoe speed (500 mm/s) led to the most nonuniform pressure distribution among the three speeds; (4) higher feed shoe speed did not always result in higher final pressure values; and (5) the right die tended to have higher final pressure values (215.0 to 2498.0 Pa) than the center die (95.4 to 2052.5 Pa). For E-shaped dies: (1) the final pressure values of the middle leg (308.9 to 760.7 Pa) were higher than those of the left and the right legs (148.9 to 530.3 Pa); (2) the area along the backside had the highest final pressure value (1054.6 to 1303.8 Pa); (3) the pressure distribution was symmetrical about the centerline parallel to the feed shoe movement direction; and (4) neither the center die nor the right die always had higher pressure values than the other one at all locations. Comparison between cylindrical and toroidal dies indicated that: (1) neither of the two die shapes (cylinder and toroid) led to consistently higher or lower final pressure values at all locations and (2) for all three feed shoe speeds, the toroidal die had higher average final pressure values in the 0° orientation.     

The process window for diamond deposition from the vapor phase with sulfur in the C–H–O feed gas mixtures

Theoretical predictions using a modified radical species ternary diagram for C–H–O system indicate that addition of sulfur expands the C–H–O gas phase compositional window for diamond deposition. Sulfur addition to no-growth domain increases the carbon super-saturation by binding the oxygen and the addition of sulfur to the non-diamond domain reduces the heavy carbon super-saturation by decreasing C_nH_m species concentration in the gas phase. The overall effect of sulfur addition to gas phase mixtures is characterized as that of oxygen addition to the C–H system, i.e. expansion of the compositional window over which diamond can be deposited from the gas phase. In addition, the increasing sulfur concentration to diamond domain feed gases beyond 2000 ppm did not affect the steady state gas phase composition but the quality of diamond was reduced.     

In-situ monitoring and control for MOCVD growth of AlGaAs and InGaAs

We have used spectroscopic ellipsometry to perform real-time monitoring during metalorganic chemical vapor deposition growth of AlGaAs (on GaAs) and InGaAs (on GaAs and InP). Optical constants for these materials were obtained up to growth temperatures of 600 to 700°C. This information permits real-time extraction of composition and layer thickness from the raw ellipsometric data at sample rates on the order of 0.5 Hz. We describe closed-loop control of composition and total layer thickness on AlGaAs-based structures, including Bragg reflectors. In-situ data obtained on double-heterostructure quantum-well laser structures demonstrate that spectroscopic ellipsometry is an extremely powerful monitoring and quality-control tool, giving important real-time information on complex structures that would be difficult and time-consuming to obtain after growth.     

The growth and characterization of AlGaAs double heterostructures for the evaluation of reactor and source quality

AlGaAs double heterostructures are grown by low-pressure metalorganic chemical vapor deposition to evaluate the level of oxygen contamination in different trimethylaluminum sources. Effects of arsine purifiers, misoriented substrates, atmospheric exposure of the growth chamber, and possible phosphorus contamination are also studied. Extensive characterization is performed on these films by a variety of methods, including high-resolution x-ray diffraction, photoluminescence (PL), time-resolved photoluminescence, and secondary-ion mass spectrometry. The PL intensities for structures grown with the low-alkoxide grade are reproducibly much greater than those grown with the regular-grade TMA1. The use of AsH₃ purification improves the PL intensity.     

金刚石薄膜中晶粒尺寸的研究

扫描电子显微研究表明，化学汽相沉积的金刚石薄膜中晶粒大小比较均匀。但随着沉积时间和薄膜厚度的增加，晶粒逐渐变大，且每一层内，存在少量的大金刚石颗粒，讨论了晶粒尺寸变化和大晶粒形成的原因和机制。     

Hydrogen incorporation in Ni–P films prepared by electroless deposition

Electroless NiP films, with 12 to 16 wt % P, were deposited from a moderately acid solution. Thermogravimetric analysis indicates the presence of occluded hydrogen in the layers, which desorbs upon heating. The amount of incorporated hydrogen decreases when the pH of the solution or the nickel sulfate concentration is increased; by contrast it increases with hypophosphite concentration. Cyclic voltammetry, using an electrochemical quartz crystal microbalance, confirms the existence of parasitic reactions, namely the reduction of protons of the solvent during the cathodic process and oxidation of hydrogen during the dissolution of the layers. This behaviour is in qualitative agreement with the proposed reaction scheme.     

Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl3

GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl₃ consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al₂O₃ were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature.     

Silver Electrodeposition from Photographic Processing Solutions

This paper describes the parameters that are important in the industrial practice of silver removal from photographic fixers. The experiments were performed under potentiostatic control using synthetic solutions. The current efficiency was analysed as a function of the cathodic potential taking into account the deposit quality. A cathodic potential of ?0.5 V against a saturated calomel electrode is recommended. The conditions to prevent the darkening of the electrodeposit were investigated. The determination of silver concentration in the solution was made by direct potentiometry. The results obtained with synthetic fixers were corroborated by making the silver deposition from commercial fixers in an electrochemical reactor with rotating cylinder electrode intercalated in an electrolytic flow circuit in order to simulate practical conditions.