用于PET薄膜回收的螺杆设计

根据PET薄膜的特点和高分子熔融态流动理论，分析了挤出回收用螺杆的各段结构，及螺杆参数选择，设计出大长径比、深槽、双排气、高效专用螺杆。     

快速色谱分析技术在油气勘探中的应用

文章通过对五口井的现场应用介绍，阐述了快速色谱分析技术在油气层识别和解释方面的准确性，探讨了该技术在薄油气层的发现和评价、快速钻进条件下油气层的发现、对油气层全烃组份变化的统一、水平井的地质导向以及排除钻井液添加荆对油气显示的影响五个方面的优势，从而论证了快速色谱分析技术在油气勘探中的应用价值。     

Breakdown of oil films and formation of residual films

The breakdown processes of oil films under quasi-static loading have been investigated by using a newly developed steel-oil-mercury system. The relationship between the thickness and breakdown ratio of a hexadecane film is represented by a single master curve independently of the indentation speed, indentation load, and temperature. The master curve shows that the breakdown process of hexadecane includes two stages; one is the decrement of the thickness without breakdown and the other is the decrement of the thickness with a drastic progress of breakdown. By solving a small amount of fatty acid in hexadecane, the thickness increases and the breakdown ratio decreases noticeably; a multilayer residual film supporting normal load is formed between two metal surfaces. Experiments at different temperatures reveal a negative relationship between the temperature and thickness of residual film, which indicates that the residual film is organized by physical interaction rather than chemical interaction. At least under a lower concentration, the residual film appears to consist of not only fatty acid molecules but also hexadecane molecules.     

薄膜润滑研究的回顾与展望

薄膜润滑是20世纪90年代以来广泛研究的新型润滑状态。它是界于弹流润滑和边界润滑之间的一种过渡润滑状态，有着自己独特的润滑规律。文章回顾了薄膜润滑的研究历史，包括薄膜润滑概念的提出、测试技术的发展、薄膜润滑的膜厚特性、润滑机理探索以及计算理论等方面的研究成果与主要进展。     

离子束辅助沉积制备高功率激光薄膜的研究

综述了离子束辅助沉积技术在高功率激光薄膜制备中的应用研究进展.指出该技术在制备高激光损伤阈值的薄膜中存在的问题,即出现过高的堆积密度,会给薄膜带来杂质缺陷、化学计量比缺陷、损伤缺陷、晶界缺陷,制备薄膜的残余应力存在着压应力增加的趋势,会改变薄膜的晶体结构等.并指出了该研究领域的研究方向.     

基于光敏自组装多层膜的液晶光控取向膜

采用layer-by-layer(LBL)的方法，将基板依次在具有光敏双键的季铵盐水溶液和聚乙烯基苯磺酸钠水溶液中浸泡，石英基板表面形成了自组装多层沉积膜。经线性偏振紫外光辐照后，LBL多层膜表现出明显的紫外吸收各向异性。将两片带有各向异性薄膜的基板做成平行液晶器件。在正交的偏光显微镜下观察，发现取得均一、稳定的取向效果。该种光控取向膜有望用作LCoS微显示的取向层。     

A study of semiconducting properties of hydrogen containing passive films

Mott–Schottky and photoelectrochemical measurements were used to explore the effects of hydrogen and chloride ions on the electronic properties of the passive film on X70 micro-alloyed steel in a solution of 0.5 M NaHCO₃. Mott–Schottky analyses have shown that hydrogen increases the capacitance and donor density, and decreases the flat band potential and the space charge layer thickness of the passive film. The photocurrent of the film is remarkably increased by hydrogen. The effects of hydrogen become more pronounced with an increase in the hydrogen charging current densities. Hydrogen has no noticeable effect on the band gap energy E_g and the process by which hole-electron pairs are photo-generated in the film. The presence of chloride ions in the solution produces some similar effects on the electronic properties of the passive film to those observed with hydrogen, but reduces the photocurrent and increases the band gap energy of the film. No significant synergistic effects on the electronic properties of the passive film were observed in the presence of hydrogen and Cl⁻. These results provide very useful information for elucidating the mechanism by which hydrogen changes the properties of passive film and then promotes localized corrosion.     

Electrical characterization of homoepitaxial diamond p–n junction

Electrical properties of homoepitaxial diamond p–n⁺ junction of boron (B)-doped p-type layer and phosphorus-doped n-type layer on Ib (111) diamond single crystal have been characterized. Current–voltage characteristics show a clear rectifying property with rectification ratio of over 10⁵ at ± 10 V. From capacitance–voltage characteristics, it is found that a spatial distribution of space-charge density N_i of the p–n⁺ junction is not uniform and N_i at a middle region of the space-charge layer formed at zero bias voltage is higher than that of other region of the space-charge layer. This peculiar characteristic can be explained by superposition of two effects; one is the deep dopant effect due to B atoms in the p-type layer, which makes to reduce N_i at around the edge of the space-charge layer formed at zero bias voltage. The other is the compensation of B acceptors by impurity atoms diffusing during the p–n⁺ interface and incorporating during the growth of p-type layer, which makes to reduce N_i at the vicinity of the p–n⁺ interface.     

硬质合金长条薄片弯曲变形的控制

从毛坯厚度差、装舟方式、冷却速度、舟皿涂料等方面分析了YG8和J12硬质合金长条薄片的弯曲变形原因,提出了几种抑制弯曲变形的措施。     

化学气相沉积铜薄膜研究进展

本文综术了集成电路工艺的Cu布线中Cu薄膜化学气相沉积(CVD)的研究背景,详细介绍了CVD生长Cu金属薄膜的国内外研究进展及CVD对前趋物的要求,并对前趋物的一些物理、化学性质进行了总结,最后,对薄膜沉积的计算机摸拟作了简要介绍。