高富锗蛹拟青霉菌株的筛选

为了获得高富锗能力的蛹拟青霉菌株,对蛹虫草无性型蛹拟青霉不同菌株进行了富锗培养,并对富锗能力、生物量、有机锗转化率等指标进行了测定.结果表明：富锗能力最强的菌株为28号和14号,在锗浓度为500μg/mL时,生物量分别为15.09 mg/mL和13.84 mg/mL,有机锗转化率分别达到2.3%和1.9%.蛹拟青霉不同菌株具有不同的富锗能力.     

氧化物对(111)锗片表面少子寿命的影响研究

为了提高(111)锗片表面少子寿命,分别采用体积分数30％过氧化氢和硝酸作为氧化剂,对试样表面进行湿化学氧化,得到表面的氧化层.利用微波光电导衰减仪测量试样在氧化反应前后的少子寿命变化情况,采用X射线光电子能谱测试样的Ge3d谱图,并进行机理分析.结果发现:经过过氧化氢处理的试样少子寿命得到很大提高,分析是由于GeO2钝化了锗表面悬挂键而达到了钝化效果.     

自加热非晶锗热电阻MEMS流速传感器的制造与测试

为扩大流速传感器的测量范围并降低功耗,制造并测试了一种基于自加热非晶锗薄膜热电阻的MEMS流速传感器,它是由嵌入氮化硅薄膜的四个非晶锗热敏电阻和一对环境测温补偿电阻组成。四个非晶锗热电阻同时作为自加热热源和测温元件,相互连接以形成惠斯通电桥。给出了MEMS工艺流程,微加工制造了尺寸为8.9 mm×5.6 mm×0.4 mm的流速传感器芯片。搭建了低流速和高流速气流通道实验装置,对传感器的惠斯通电桥施加50μA的恒定电流(CCA),实现了0～50 m/s范围内的流速测量。结果表明,传感器在低流速(0～2 m/s)时的灵敏度约为81.6 mV/(m/s),在高流速(2～50 m/s)时的灵敏度约为51.9 mV/(m/s),最大功耗仅约为1.03 mW。     

Mesoporous Germanium Anode Materials for Lithium‐Ion Battery with Exceptional Cycling Stability in Wide Temperature Range

Porous structured materials have unique architectures and are promising for lithium‐ion batteries to enhance performances. In particular, mesoporous materials have many advantages including a high surface area and large void spaces which can increase reactivity and accessibility of lithium ions. This study reports a synthesis of newly developed mesoporous germanium (Ge) particles prepared by a zincothermic reduction at a mild temperature for high performance lithium‐ion batteries which can operate in a wide temperature range. The optimized Ge battery anodes with the mesoporous structure exhibit outstanding electrochemical properties in a wide temperature ranging from ?20 to 60 °C. Ge anodes exhibit a stable cycling retention at various temperatures (capacity retention of 99% after 100 cycles at 25 °C, 84% after 300 cycles at 60 °C, and 50% after 50 cycles at ?20 °C). Furthermore, full cells consisting of the mesoporous Ge anode and an LiFePO₄ cathode show an excellent cyclability at ?20 and 25 °C. Mesoporous Ge materials synthesized by the zincothermic reduction can be potentially applied as high performance anode materials for practical lithium‐ion batteries.     

Inducing imperfections in germanium nanowires

Nanowires with inhomogeneous heterostructures such as polytypes and periodic twin boundaries are interesting due to their potential use as components for optical,electrical,and thermophysical applications.Additionally,the incorporation of metal impurities in semiconductor nanowires could substantially alter their electronic and optical properties.In this highlight article,we review our recent progress and understanding in the deliberate induction of imperfections,in terms of both twin boundaries and additional impurities in germanium nanowires for new/enhanced functionalities.The role of catalysts and catalyst-nanowire interfaces for the growth of engineered nanowires via a three-phase paradigm is explored.Three-phase bottom-up growth is a feasible way to incorporate and engineer imperfections such as crystal defects and impurities in semiconductor nanowires via catalyst and/or interfacial manipulation."Epitaxial defect transfer"process and catalyst-nanowire interfacial engineering are employed to induce twin defects parallel and perpendicular to the nanowire growth axis.By inducing and manipulating twin boundaries in the metal catalysts,twin formation and density are controlled in Ge nanowires.The formation of Ge polytypes is also observed in nanowires for the growth of highly dense lateral twin boundaries.Additionally,metal impurity in the form of Sn is injected and engineered via third-party metal catalysts resulting in above-equilibrium incorporation of Sn adatoms in Ge nanowires.Sn impurities are precipitated into Ge bi-layers during Ge nanowire growth,where the impurity Sn atoms become trapped with the deposition of successive layers,thus giving an extraordinary Sn content (＞6 at.％) in Ge nanowires.A larger amount of Sn impingement (＞9 at.％) is further encouraged by utilizing the eutectic solubility of Sn in Ge along with impurity trapping.     

快速热处理下镍对锗单晶电学性能的影响

采用磁控溅射法在n-Ge表面镀镍薄膜,通过改变快速热处理时间研究镍对锗单晶的导电型号、电阻率和少子寿命的影响,以及镍在锗中的扩散行为。结果表明：镍在锗中具有向内扩散和向外扩散两种行为,并以受主状态存在,改变了锗内部的载流子的分布;775℃热处理后,镍受主完全补偿原有的施主,使锗由n型转变为P型,随着热处理时间的增加,电阻率下降,镍受主浓度增加。即使微量的镍就可以使锗的少子寿命直线下降至零点几微秒,这表明镍在锗中会引入深能级。     

聚乙烯吡咯烷酮对酸诱导液相沉积体系中GeO_2颗粒形貌的影响

在室温下,通过酸诱导液相沉积的方法,制备出了二氧化锗(GeO2)颗粒。制得的GeO2颗粒通过扫描电子显微镜(SEM),透射电子显微镜(TEM)和X射线衍射(XRD)进行表征。实验结果表明,向前驱液中加入酸,可以诱导锗酸根离子转化成立方体型的GeO2颗粒析出。而向反应液中再加入少量的聚乙烯吡咯烷酮(PVP)后,会析出纺锤体型的GeO2晶体颗粒。     

SiGe HBT双端口网络参数模型和模拟

针对等效电路模型中应用频率范围窄、精度低以及在高频器件分析过程中与网络分析法的兼容性差等问题,由交流I-V方程出发,推导得到使用散射参数描述的锗硅异质结双极晶体管(SiGe HBT)的双端口网络参数模型．着重分析了Si／SiGe异质结和基区结构对器件交流性能的作用,并尽量避免省略物理量和对频率上限的限制．与等效电路模型相比,模型的频域精度由半定量提高至优于5％,并将适用频率由特定范围扩展至只计入本征参数时的特征频率fT,涵盖全部SiGe HBT的小信号工作频段,为器件的设计、优化和应用提供了一种宽频带和高精度的定量模拟方法．     

高锗锌原料湿法冶炼的实践

分析了锗在湿法炼锌浸出—净化过程中的行为,并通过实践确定了高锗锌原料湿法处理的工艺条件,介绍了存在的问题和解决措施。     

Fast,Scalable Synthesis of Micronized Ge3N4@C with a High Tap Density for Excellent Lithium Storage

Nanostructuring has significantly contributed to alleviating the huge volume expansion problem of the Ge anodes. However, the practical use of nanostructured Ge anodes has been hindered due to several problems including a low tap density, poor scalability, and severe side reactions. Therefore, micrometer-sized Ge is desirable for practical use of Ge-based anode materials. Here, micronized Ge₃N₄ with a high tap density of 1.1 mg cm⁻² has been successfully developed via a scalable wet oxidation and a subsequent nitridation process of commercially available micrometer-sized Ge as the starting material. The micronized Ge₃N₄ shows much-suppressed volume expansion compared to micrometer-sized Ge. After the carbon coating process, a thin carbon layer (≈3 nm) is uniformly coated on the micronized Ge₃N₄, which significantly improves electrical conductivity. As a result, micronized Ge₃N₄@C shows high reversible capacity of 924 mAh g⁻¹ (2.1 mAh cm⁻²) with high mass loading of 3.5 mg cm⁻² and retains 91% of initial capacity after 300 cycles at a rate of 0.5 C. Additionally, the effectiveness of Ge₃N₄@C as practical anodes is comprehensively demonstrated for the full cell, showing stable cycle retention and especially excellent rate capability, retaining 47% of its initial capacity at 0.2 C for 12 min discharge/charge condition.