用复合烷基锂引发丁二烯聚合

对以环己烷为溶剂、四氢呋喃为微观结构调节剂、复合烷基锂为引发剂的丁二烯聚合反应过程进行了研究，考察了不同引发温度、不同配比的复合烷基锂对聚合反应的影响，并与以正丁基锂为引发剂的丁二烯聚合反应过程进行了比较。     

Influence of two-step process and of different stoichiometric ratios on morphologies generated in castor oil epoxy resins

Phase separation during polymerization was studied in a model system consisting of a diepoxide based on diglycidyl ether of bisphenol A (DGEBA), variable amounts of ethylenediamine (EDA) and the mass of castor oil (CO) necessary to obtain a mass fraction equal to 0-15 in a final system where the stoichiometric ratio of amine to epoxy equivalents, r, was equal to 1. A two-step polymerization process was performed by curing first a system with r = 0-5, during variable times before phase separation, and then carrying the system to r = 1. Thermodynamic analysis of samples with different r values led to a linear relationship between the Flory-Huggins interaction parameter and r. The concentration (P) and average size (D?) of dispersed-phase particles followed opposite trends, i.e. P increased while D? decreased, when either r was increased or the time of curing in the first step of a two-step process was decreased. This was explained by assuming that the competition between nucleation and growth was determined by the viscosity at the cloud point, η_cp. Low values of η_cp favoured growth over nucleation and led to fewer but larger particles.     

分子结构对增塑聚氯乙烯性能的影响

研究了聚合度、分子量分布和支化结构对增塑聚氯乙烯加工流变性能和物理力学性能的影响。结果表明，增塑ＰＶＣ的加工流变性能随聚合度的增加而恶化；拓宽分子量分布和引入支化结构均有利于加工流变性能的提高；增塑ＰＶＣ的拉伸强度随聚合度的增加而提高，而压缩永久变形却随之减小；分子量分布对物理力学性能的影响不大；支化ＰＶＣ的拉伸强度略有下降。     

Selective area epitaxy of CdTe

We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique. This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential in order to achieve good pattern definition.     

Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

乙烯基三甲基硅烷等离子体聚合反应历程

应用色谱—质谱(GC-MS)及裂解色谱-质谱(PGC-MS)测定了乙烯基三甲基硅烷等离子体聚合反应中的气体冷凝物及聚合物,研究推导了等离子体聚合反应历程。单体在气相中被电子撞击,然后扩散到基底,在基底发生链增长和链终止反应。     

HPVC／PP共混改性研究：Ⅲ低分子量反应性化合物作相容剂

采用低分子量反应性化合物作相容剂，即化学交联体系来改善ＨＰＶＣ／ＰＰ共混物的相容性。考察了在不同共混比下，不同化学交联体系对共混物力学性能的影响，并观察了共混物的微观形态。结果表明，采用低分子量反应性化合物作相容剂，共混物的拉伸强度提高，但冲击强度无改善。分散相尺寸减小，相间粘接得到改善。并比较了３种增容方法的效果，发现ＣＰＥ是ＨＰＶＣ／ＰＰ共混物的最佳相容剂。     

Control of the quality of polymer products in continuous reactors: comparison of performance of state estimators with and without updating of parameters

In the paper the control of the product quality in polymerization reactors is analysed in the presence of persistent perturbations (unmodeled disturbances, modeling errors), as met in industrial reactors. The free radical polymerization of methyl-methacrylate in a continuous stirred tank reactor is studied. It is shown that state estimators (Extended Kalman Filters) with constant parameters cannot give offset free performance. Criteria for the selection of a set of parameters to be updated as additional states in the filter and to evaluate their effectiveness in opposing the action of realistic perturbations are given by an analysis of the linearized model of the system. Performance of different types of estimators, including one and two-time scale filters, with and without updating of parameters, is analysed by simulation on the full order process and the predictions made by previous analysis are confirmed. In the most common case of presence of perturbations affecting the energy balance and the concentration of initiator in the reactor, offset free control of the molecular weight of the product can be achieved by means of a filter which is based only on measurements of temperature and conversion and makes an update of two parameters. In the case that also the kinetic model of the polymerization reaction is affected by errors, a two-time scale filter, which makes use also of Molecular Weight values and updates three parameters, becomes necessary to obtain offset free performance.     

Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x

In-situ doped polycrystalline Si_xGe_1-x (x = 0.7) alloys were deposited by rapid thermal chemical vapor deposition (RTCVD) using the reactive gases SiH₂Cl₂, GeH₄ and B₂H₆ in a H₂ carrier gas. The depositions were performed at a total pressure of 4.0 Torr and at temperatures 600° C, 650° C and 700° C and different B₂H₆ flow rates. The conditions were chosen to achieve high doping levels in the deposited films. Our results indicate negligible effect of B₂H₆ flow on the deposition rate. The depositions follow an Arrhenius type behavior with an activation energy of 25 kcal/mole. Boron incorporation in the films was found to follow a simple kinetic model with higher boron levels at lower deposition rates and higher B₂H₆ flow rates. As-deposited resistivities as low as 2 mΩ-cm were obtained. Rapid thermal annealing (RTA) in the temperature range 800-1000° C was found to reduce the resistivity only marginally due to the high levels of boron activation achieved during the deposition process. The results indicate that polycrystalline Si_xGe_1-x films can be deposited by RTCVD with resistivities comparable to those reported for in-situ doped polysilicon.     

Ziegler-Natta烯烃聚合催化剂进展

综述了Ziegler-Natta催化剂在乙烯聚合和丙烯聚合方面的研究开发现状，重点介绍了采用新型二醚化合物作为内给电子体的丙烯聚合催化剂的进展。随着合成树脂向功能化方向发展，开发综合性能优越的新型催化剂及给电子体将是今后的研究方向。