The coalescence of two growing bubbles presents unique characteristics compared to static bubble coalescence. The gas injection flowrate significantly affects the different stages of bubble evolution, which is poorly understood. In this study, we investigate the flowrate effects on the lateral coalescence of two growing bubbles experimentally. The synchronous bubbling from adjacent needles is achieved using water to push air. During the bubble growth process, we find that the initial nonlinear evolution of bubble volume is because the bubble emerges as a small spherical cap with a large curvature radius and apparent contact angle. As the neck expands after bubble coalescence, the injection flowrate accelerates the neck evolution compared to the case without air injection. We find the neck expansion time decreases linearly with increasing flowrate, while the expansion speed increases with flowrate, but only in the early stage. Moreover, we propose a new theoretical expression that predicts the neck radius well at all the flowrates. At the post-coalescence oscillation stage, the average projection area of the coalesced bubble increases linearly with time, except for periodic oscillations. Besides, we find that the injected air primarily influences the coalesced bubble's height, which in turn affects the projection area. 相似文献
In order to optimize and improve the design of power devices with improved surge current safe operating area it is necessary to obtain a good correlation between measured and simulated space and time resolved temperature distributions. Therefore, an IR microscope capable of measuring the space and time resolved surface temperature distributions in Si power diodes operating under self-heating conditions has been developed. The minimum detectable spot size is 15 μm, while the signal rise time is detector limited to about 1 μs. The lower temperature detectivity limit is about 10°C over room temperature.
Using this instrument dynamic thermal phenomena in fast recovery 3.3 kV Si power diodes having radiation-induced recombination centers [Proceedings of the 7th EPE, Trondheim, 1997] subjected to 1.2 ms 400–2000 A/cm2 and 0.3–2 ms 2000 A/cm2 current pulses have been studied. The experimental results have been compared to results from 2D device simulations including surface recombination and carrier lifetime temperature dependence. The agreement between experimental and device simulation results (i.e. dynamic IV characteristics and time and space resolved temperature distributions) is very good up to a peak current density of 1500 A/cm2, and a reasonable good one for peak current densities up to 2000 A/cm2 (1.2 ms current pulses). 相似文献
A novel technique for flip-chip package deprocessing that allows for detailed failure analysis of internal flip-chip packaging
structures and chip circuitry has been developed. A systematic approach of selective wet etching and plasma etching is utilized.
Understanding of package level reliability can be greatly enhanced with the capability to systematically access and examine
defects in three-dimensions with powerful analytical tools such as the SEM/EDS. Additionally, the ability to inspect large
areas of internal packaging structures, e.g., solder bump array, in three-dimensions makes it faster and more convenient to
locate defects, compared to two-dimensional techniques such as progressive cross-sectioning. Case studies involving defects
in solder bumps, underfill material, and substrate metallization are presented. 相似文献
We investigate simulation approaches for the modelling of the primary shaping processes micro powder injection moulding and
micro casting. We could reproduce the segregation during micro powder injection moulding (MicroPIM) with a simulation using
particle methods. The phase field method allows for accurate prediction of the dynamics of solidification of a melt, whereby
model order reduction is used to limit the computational effort. The results give valuable advice for the process conduct
and the dimensioning of the micro parts. 相似文献