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141.
The fluorescence of terbium (Ⅲ) was enhanced by about three orders of magnitude in the presence of trimellitic acid (benzene-l, 2, 4-tricarboxylic acid (TLA)) in aqueous solution at pH 6. The fluorescence intensity could be greatly increased when the system of Tb3+-TLA was treated with La3+ (or Gd3+) and TritonX- 100. The addition of La3+ (or Gd3+) enhances the fluorescence of the system by about two orders of magnitude due to cofluorescence, and the TritonX-100 micellar medium plays an important role for stabilization of the system. Both the intermolecular energy transfer mode and intramolecular energy transfer mode are responsible for the mechanism of fluorescence enhancement. In the optimum conditions, the fluorescence intensity is a linear function of Tb3+ concentration in the range of 7.8 × 10-9-3.6 × 10-6 mol/L for the system Tb3+-La3+-TLA and 1.0 × 10-8-4.7 × 10-6 mol/L for the system Tb3+-Gd3+-TLA, and the limits of detection are 4.6 ×10-10 mol/L and 6.0 × 10-10 mol/L, respectively. 相似文献
142.
通过X射线衍射分析、透射电镜观察、红外透射光谱分析、紫外-可见吸收光谱分析和光致发光试验,研究了用金属有机物化学汽相沉积(MOCVD)的方法,在带有GaN缓冲层的蓝宝石(Al2O3)衬底上生长的AlGaN/GaN超晶格材料的微观结构、光吸收性质和发光特性.X射线衍射结果表明,GaN基材料均为纤锌矿六方结构,薄膜具有良好的结晶质量,薄膜生长沿c轴择优取向.透射电镜观察表明,超晶格试样的周期结构分布均匀,实际周期为13.3nm,且观察到高密度的位错存在于外延膜中。通过光学试验数据,确定了试样的光学吸收边都是在370nm附近,理论计算显示试样为直接跃迁型半导体,禁带宽度约为3.4eV。试样的折射率随光子能量的增加而增加、随波长的增加而减小,计算表明消光系数的极小值位于370nm处。光致发光测试分析表明,超晶格有很好的发光性能,并发现存在黄带发光。 相似文献
143.
Effect of growth-interrupted method on quality of AlGaAs/GaAs multiple quantum wells prepared by MBE
AlGaAs/GaAs multi-quantum well (MQW) was prepared by molecular beam epitaxy(MBE) with growth-interrupted heterointerface (GIH) method and continuous growth (CG) method, respectively. The microstructures Of the MQWs were characterized by double-crystal X-ray rocking curve (DCRC) and atomic force microscopy (AFM), and the photoluminescence (PL) properties of the MQWs were also studied. The MQWs grown with GIH method show that higher order satellite peaks of Pendelloesung fiinges are observed in DCRC, the roughness of surface is much reduced in AFM, and the full width at half maximum (FWHM) of exciton line is much narrower in PL. The results indicate that the GIH method reduces the monolayer growth step density at the heterointerface due to the migration of surface atomsfor a few minutes grower interruption, and substantially improves the quality of AlGaAs/GaAs MQWs. 相似文献
144.
Surface morphology and photoluminescence properties of ZnO thin films obtained by PLD 总被引:2,自引:1,他引:2
ZnO thin films on Si(111) substrate were deposited by laser ablation of Zn target in oxygen reactive atmosphere, Nd-YAG laser with wavelength of 1 064 nm was used as laser source. XRD and FESEM microscopy were applied to characterize the structure and surface morphology of the deposited ZnO films. The optical properties of the ZnO thin films were characterized by photoluminescence. The UV and deep level (yellow-green) light were observed from the films. The UV light is the intrinsic property and deep level light is attributed to the existence of antisite defects (Ozn). The intensity of UV and deep level light depends strongly on the surface morphology and is explained by the surface roughness of ZnO film. A strongly UV emission can be obtained from ZnO film with surface roughness in nanometer range. 相似文献
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147.
Tae-Sik Kim Young-Je An Kwang Ho Kim Won-Sub Chung Young-Rae Cho 《Metals and Materials International》2006,12(4):339-343
The effect of the dielectric constant (k) of bonding materials in a screen-printed carbon nanotube (CNT) cathode on the field
enhancement factor was investigated for high-efficiency CNT cathodes using the ANSYS software. The values obtained by a simulation
study were compared to the experimental results obtained for screen-printed CNT cathodes. The field enhancement factor increased
as the dielectric constant decreased, reaching a maximum value at a dielectric constant of 1, the value for a vacuum. The
findings indicate that the larger sheet resistance of the bonding materials, after the firing process, can be attributed to
the larger emission current of the CNT cathode. From these results, it was concluded that the best bonding materials for screen-printed
CNT cathodes should have a low dielectric constant and a high sheet resistance. This finding can be used as criteria for selecting
bonding materials for use in CNT pastes for highly efficient CNT cathodes. 相似文献
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149.
为提高强噪声环境下语音信号的信噪比,增强语音通信的质量,以DSP为平台,构建一个基于自适应滤波技术的单通道语音增强系统。该系统以TMS320F2812为核心,结合其多通道缓冲串口(McBSP)与扩展音频接口芯片TLV320AIC23实现了语音信号的高速采集及输出;同时,利用箕舌线函数更新自适应滤波步长因子并引入解相关运算进行语音降噪处理,有效改善了传统算法适应性差,收敛速度慢,稳态误差大等问题。实验结果表明该算法降噪性能好,能明显提高语音清晰度,且系统稳定性强。 相似文献
150.
目的 为解决低照度视频亮度和对比度低、噪声大等问题,提出一种将Retinex理论和暗通道先验理论相结合的低照度视频快速增强算法。方法 鉴于增强视频时会放大噪声,在增强之前先对视频进行去噪处理,之后结合引导滤波和中值滤波的优势提出综合去噪算法,并将其应用于YCbCr空间。其次提取亮度分量来估计亮度传播图,利用大气模型复原低照度视频。最后综合考虑帧间处理技术,加入场景检测、边缘补偿和帧间补偿。结果 为了验证本文算法的实际效果和有效性,对低照度视频进行增强实验并将本文算法与Retinex增强算法、去雾技术增强算法进行了比较,本文算法有效地提高了低照度视频的亮度和对比度,减小了噪声,增强了视频的细节信息并减轻了视频闪烁现象,从而改善了视频质量。算法处理速率有着非常明显的优势,相比文中其他两种算法的速率提升了将近十倍。结论 本文算法保持了帧间运动的连续性,在保证增强效果的同时提升了处理速率,对细节和边缘轮廓部分的处理非常精细,具有目前同类算法所不能达到的优良效果,适用于视频监控、目标跟踪、智能交通等众多领域,可实现视频的实时增强。 相似文献