基于SOI的双极场效应晶体管

在分析了双极型晶体管和场效应晶体管各自的特点和不足后，介绍了一种既具有双极型晶体管较大电流容量和功率输出，又具有场效应晶体管高输入阻抗的电子器件——双极MOS场效应晶体管(BJMOSFET)，同时指出体硅BJMOSFET的阳极扩散区与衬底之间存在较大的漏电流，可产生较大的寄生效应。提出了一种新型固体电子器件——基于SOI的BJMOSFET，分析了其工作原理j与体硅BJMOSFET比较，由于SOI技术完整的介质隔离避免了体硅器件中存在的大部分寄生效应，使基于SOI的BJMOSFET在体效应、热载流子效应、寄生电容、短沟道效应和闩锁效应等方面具有更优良的特性。     

黑龙江省电子政务建设及思考

黑龙江省电子政务"王"字型广域网络结构采用MPLSVPN技术,解决了网络互联互通、允许内部IP地址重复问题,为推广网上应用系统实现信息共享奠定了良好的基础;反思了黑龙江省电子政务建设的一些做法,为兄弟省电子政务建设提供一些可借鉴的模式。     

Finite element analysis of femoral components paper III – hip joints

Finite element analysis of the hip implant is conducted in this paper for representative femoral cross-section geometries and development of stress in the presence of bone cement is elucidated. Differences in cement stresses generated by varying implant cross-sections were compared with conventional features derived from representative implants. The analysis was performed under idealized implant assemblies by constraining the implant movement in the assembly. The cross-sections and implant geometries used are generic and intended to be representative of available geometries. This paper is a part of student research projects, prepared from a series of activities in biomedical implant research currently underway at Ohio Northern and Arkansas Tech Universities.     

Low temperature delamination of plastic encapsulated microcircuits

Plastic encapsulated microcircuits (PEMs) are increasingly being used in applications requiring operation at temperatures lower than the manufacturer’s recommended minimum temperature, which is 0°C for commercial grade components and −40°C for industrial and automotive grade components. To characterize the susceptibility of PEMs to delamination at these extreme low temperatures, packages with different geometries, encapsulated in both biphenyl and novolac molding compounds, were subjected to up to 500 thermal cycles with minimum temperatures in the range −40 to −65°C in both the moisture saturated and baked conditions. Scanning acoustic microscopy revealed there was a negligible increase in delamination at the die-to-encapsulant interface after thermal cycling for the 84 lead PQFPs encapsulated in novolac and for both 84 lead PQFPs and 14 lead PDIPs encapsulated in biphenyl molding compound. Only the 14 lead novolac PDIPs exhibited increased delamination. Moisture exposure had a significant effect on the creation of additional delamination.     

Efficient Parallel Algorithms for Some Graph Theory Problems

In this paper,a sequential algorithm computing the aww vertex pair distance matrix D and the path matrix Pis given.On a PRAM EREW model with p,1≤p≤n^2,processors,a parallel version of the sequential algorithm is shown.This method can also be used to get a parallel algorithm to compute transitive closure array A^* of an undirected graph.The time complexity of the parallel algorithm is O(n^3/p).If D,P and A^* are known,it is shown that the problems to find all connected components,to compute the diameter of an undirected graph,to determine the center of a directed graph and to search for a directed cycle with the minimum(maximum)length in a directed graph can all be solved in O(n^2/p logp)time.     

数字散斑干涉技术及应用

介绍了数字散斑干涉技术在位移、应变、振动和医学诊断等领域中的应用和国内外发展状况。提出了一种新的应用领域—数字散斑干涉技术在语音识别中的应用,并对该方法作了介绍,讨论了它的特点。     

内循环好氧三相流化床处理造纸中段废水

本实验采用内循环好氧三相流化床处造纸中段废水，经过一段时间的驯化，获得了稳定的出水。CDO去除经保持在65％以上，系统对进水污染负荷的变化具有较大的承受能力。出水Cl^-的浓度有所增加，说明驯化后的微生物可能对有抽氯化物具有一定的降解作用。水气比在1／120至1／140之间可获得最好的COD去除效果。后进行絮凝处理后，出水COD降为60－80mg/L,BODo 50-60/L，色度为100－150CU，挥发性酚的质量浓度小于0．0265mg／L。     

法国产CT4型横拼双金属专用真空电子束焊机原理与构造

试述法国TECHMETA公司产的CT4型横拼双金属专用真空电子束焊机原理与构造，其中主要阐述电子枪控制电路板的原理。     

连续工作型电子装备战备完好性预计

从战略完好性的实际内涵出发，考虑到装备实际工作中可能处于不同的工作状态，因而其战略完好性模型也应有所有同。对于处于连续工作状态的电子装备，即使工作中发生故障，只要执行下次任务前能修好，就不影响装备的战略完好性。基于此，得出了电子装备处于连续工作状态下的战略完好性预计模型，并在对应的条件下对此模型的得出进行了缜密的推理。     

分子束外延生长液晶光阀用ZnSxSe1-x薄膜的研究

描述了ZnSxSe1-x光盲紫外液晶光阀的结构和工作原理 ,并从器件的电学模型出发 ,着重讨论了整体器件对ZnSxSe1-x光敏层的特殊要求。采用分子束外延技术在ITO导电玻璃上制备了具有 (111)面定向生长结构的ZnSxSe1-x多晶薄膜 ,通过控制反应时的生长参数 ,制备出了符合器件设计要求的光敏层薄膜。室温下 ,该薄膜的紫外 /可见光响应对比度大于10 3 ;响应波长截止边可通过控制薄膜中的Se组分 ,在 (36 0～ 4 10 )nm范围内连续可调 ;薄膜的暗电阻率在 (4 32× 10 9～ 2 0 3×10 11)Ω·m之间 ,并随着晶粒的增大而减小 ;在液晶光阀工作的低频段 (<2 0 0Hz) ,其光 /暗阻抗比在 0 2 2～ 0 36之间。