Proton and hydrogen formation by cyclohexyl benzene during overcharge of Li-ion batteries

This study provides experimental evidence for proton and hydrogen formation caused by the anodic electropolymerization of cyclohexyl benzene (CHB), which is a popular electrolyte additive for overcharge protection of lithium-ion batteries (LIBs). It is found that considerable H₂ evolution is observed in overcharged LiCoO₂/graphite cells, especially when CHB is included as an electrolyte additive. In order to confirm the proton generation during the CHB oxidation, Pt/Pt-rotating ring disc electrode (RRDE) measurements are performed in 1 M Li(C₂F₅SO₂)₂N ethylene carbonate/ethyl methyl carbonate (1/2, v/v) solutions with and without CHB. The cathodic ring current is intimately correlated to the anodic disc current, and the cathodic reaction at the ring is determined to be the reduction of the proton. The proton generation efficiency during the CHB oxidation is as high as 90%. Proton liberation is also observed during the anodic decomposition of the electrolyte solvents, although it occurs in a much less stoichiometric way compared with that during the CHB oxidation.     

薄板坯表面变形实验分析

对连铸薄板坯的坯壳表面变形的物理模拟实验方法进行了分析,提出一种"铜裹铅双金属"新实验方案,并对坯壳表面弯曲变形进行了分析.     

光隔离器及其相关的磁光材料

本文简要介绍了磁光隔离器的理论、结构和分类 ,并提出了该器件今后发展的几个问题 ,最后介绍了几种磁光材料     

应用ITO膜作电荷收集极的位置灵敏探测器

首次尝试将ITO（Indium Tin Oxide）膜与微通道板（Microchannel Plate）结合用作位置灵敏探测器，并对该探测器的线性、位置分辨及探测效率作了测试，得到了令人满意的结果。     

只读式超分辨光盘的膜层设计和分析

超分辨技术是一种无需减小记录波长或增大数值孔径而提高存储密度的方法。Ge Sb Te是一种良好的相变光存储材料 ,在超分辨光盘中可作为掩膜。利用多层膜反射率的矩阵法计算了掩膜为Ge2 Sb2 Te5薄膜的超分辨只读式光盘的光学参数与各膜层厚度之间的关系 ,最后得到了较为理想的膜层厚度匹配。采用磁控溅射法制备了只读式超分辨光盘 ,测量了光盘的光学性质。     

EMD与KOH溶液的相互影响

利用滴定分析、热失重分析以及XRD方法研究了EMD和KOH溶液混合后的变化。结果表明:碱与MnO2可以相互作用并导致体系温度的升高,碱浓度的下降,EMD中形成Mn3O4以及MnO2中结合水的损失。相互作用的结果与所加KOH溶液的浓度、EMD中的水含量、二者用量的比例关系以及体系的温度有关。     

CHARACTERIZATION OF Si_(1-x-y)Ge_xC_y FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY

Si1-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-yGexCy layers, a certain amount of C atoms occupied substitutional sites and no SiC was formed.     

纳米ZnO薄膜制备及液态源掺杂

用真空蒸发法在玻璃和单晶硅片 (10 0 )上制备Zn薄膜 ,然后对Zn薄膜进行氧化、热处理获得纳米ZnO薄膜。对在硅片上制备的Zn薄膜一次性进行高温掺杂、氧化获得纳米ZnO∶P和ZnO∶B薄膜。研究不同氧化、掺杂温度和时间对薄膜结构、电学性能的影响。结果表明 :氧化温度和时间对ZnO薄膜结构影响较大 ,液态源掺P可明显改善纳米ZnO薄膜的导电性能、结构特性和化学组分     

非晶软磁合金的巨磁阻抗效应及应用

近来在ＦｅＣｏＳｉＢ等Ｃｏ基非晶体丝带中现了巨磁阻抗效应，由于在一小的直流纵向偏置场下该效应能使丝带两端的交流电压发生大而灵敏的变化，因而在磁记录头和传顺技术中具有巨大的应用科学潜能，受到各国学者的关注，本文简单介绍了巨磁阻抗效应的来源，并综述了近年来非晶体软磁合金材料的的巨磁阻抗效应及应用的研究进展，文章最后说明了尚待深入解决的问题。     

通信用VRLA蓄电池可靠性指标及计算探讨

在说明通信局（站）电源系统对VRLA蓄电池组可靠性要求的基础上，阐述了为了达到电信设备的电压、电流需求，通过串联或串并联构成电池组的单体VRLA蓄电池应达到的可靠性指标。在确定单体VRLA蓄电池应达到的可靠性指标。在确定单体VRLA蓄电池可靠性参数时，可通过现场使用调查或加速寿命试验的办法来求得。在单体VRLA蓄电池可靠性指标过低的情况下，可通过多种冗余连接方式来提高电池组的可靠性。