Microcontact printing of indium metal using salt solution “ink”

Poly(dimethlysiloxane) stamps were made from Si masters fabricated using photolithography and anisotropic etching. GaCl₃ and In(NO₃)₃ were microcontact printed onto Si substrates, creating arrays of micron size metal salt deposits. The In(NO₃)₃ deposits were further processed by annealing in an N₂ :H₂ (9:1) forming gas environment at 600 °C which converted the deposits into In metal. The ability to inexpensively pattern metal arrays on semiconductor surfaces has implications for ohmic contacts and, with additional processing, arrays of semiconductor crystallites for optoelectronic applications.     

Plasma-assisted co-evaporation of β-indium sulfide thin films

This paper describes the development of plasma-assisted co-evaporation (PACE) for the formation of β-In₂S₃ thin films. Indium was supplied by conventional thermal evaporation, while the chalcogen gas precursor (H₂S) was activated using an inductively coupled plasma (ICP) source. Using a combination of optical emission spectroscopy and mass spectrometry it was shown that the ICP effectively dissociated H₂S, producing atomic sulfur. Transport modeling was used to quantify the flux distributions of the co-evaporated metal and the plasma-generated species impinging the substrate. Model predictions were validated by measurements of deposition rate and film properties. Substantial improvements in both materials utilization and substrate temperature reduction were realized with respect to conventional co-evaporation. β-In₂S₃ was formed as low as 100 °C and it was observed that quality was a strong function of S/In ratio. The grain size decreased and the optical band gap increased as the substrate temperature was reduced.     

搅拌磨机械活化硬锌渣浸铟的动力学研究

以硬锌渣为浸出对象,用盐酸作为浸出剂,研究了硬锌渣经搅拌磨活化后浸铟的动力学.与未活化硬锌渣相比较,经机械活化30 min、60 min后,硬锌渣中铟与盐酸的化学反应活性提高、反应速度加快、表观活化能和反应级数降低.其中表观活化能由未活化时的24.5 kJ/moL分别降至13.9 kJ/moL、11.4 kJ/moL,反应级数由原来的0.39分别降至0.36和0.22.     

Doubled layered ITO/SnO2 conducting glass for substrate of dye-sensitized solar cells

The effects of indium tin oxide (ITO) and ITO/SnO₂ conducting substrates on photovoltaic properties of dye-sensitized solar cells (DSCs) using nanocrystalline TiO₂ were studied. The decrease in fill factor of the DSCs was correlated to the increase in resistance of conducting substrate. The heat stability of ITO conducting glass was improved by depositing SnO₂ on ITO layer. The efficiency of the cells using double layered ITO/SnO₂ substrate remarkably increased comparing with that of the cells using ITO substrates. It is worth mentioning that increasing in sintering time, which enhanced the electronic contact between substrate and TiO₂, also modified the cell performance of MP-TiO₂ cells. Our experimental finding suggests that 3000 Å ITO substrate, which was covered by 1000 Å SnO₂ layer, exhibited the best properties for the DSCs.     

Study for improvement of solar cell efficiency by impurity photovoltaic effect

This paper is to study for efficiency improvement of solar cells by utilizing impurity traps introduced in the band gap of semiconductor, that is, impurity photovoltaic (IPV) effect. It is revealed theoretically that there is a certain energy range where impurity-traps act as stepping stones in two-step excitation of electrons from the valence band to the conduction band under suppression of carrier recombination through such traps. Indium is selected as one of proper impurities that satisfy this condition in crystalline silicon, and theoretical prediction is experimentally verified. A good agreement between theory and experiment is obtained concerned with photoconductive properties. It is concluded that the IPV effect is useful to improve the cell efficiency.     

Surface states related the bias stability of amorphous In–Ga–Zn–O thin film transistors under different ambient gasses

This paper investigates the origin of the bias stability under ambient gas (oxygen, moisture and vacuum) of In–Ga–Zn–O thin film transistors with different annealing temperatures. In Zn-based TFTs, the electrical characteristic of device is a strongly function with the ambient gas, the simultaneous gas ambient and bias stresses are applied on devices annealed in atmosphere ambient to study this issue. The result shows the device which is annealed at temperature up to 330 °C has worst reliability. We suppose that the sensitivity of gas ambient depend the defect state, which is associated to the annealing temperature, of surface in a-IGZO.     

Effect of N2O plasma treatment on the improvement of instability under light illumination for InGaZnO thin-film transistors

This paper investigates the impact of N₂O plasma treatment on the light-induced instability of InGaZnO thin film transistors with a SiO₂ passivation layer deposited by plasma-enhanced-chemical-vapor-deposition (PECVD). For the untreated device, because the deposition of the SiO₂ passivation layer by PECVD causes extra trap states, the anomalous subthreshold leakage current can be attributed to a lowering of the source side barrier due to trap-assisted photogenerated holes. In contrast, the N₂O plasma treatment applied to both the gate insulator and the active layer effectively suppresses the device instability under illumination. In order to clarify the influence of the N₂O plasma treatment, this study investigates a device with treatment of only the gate insulator. This device shows a slight decrease of light-induced subthreshold leakage current. This demonstrates that N₂O plasma treatment on IGZO active layer after its deposition is critical in preventing damage from the subsequent SiO₂ passivation deposition process. In addition, the instability of threshold voltage (V_T) under negative bias illumination stress (NBIS) is significantly improved by the N₂O plasma treatment. Furthermore, a different dark recovery rate follows NBIS for untreated and N₂O plasma-treated devices, indicating different hole-trapping levels exist in the energy band.     

Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films

Thin films of indium tin oxide (ITO) sputter-deposited by dc-plasma containing deuterium on glass substrate without any heat treatments exhibited gradual lowering in electrical resistivity with increasing the deuterium content [D₂] in plasma gas by 1% and then demonstrated a jump in resistivity by further increase of [D₂] than 1%. X-ray photoelectron spectroscopy revealed that hydroxyl-bonded oxygen in ITO grew continuingly with [D₂]. Deuterium positioned at the interstitial site increased almost quantitatively with increasing [D₂]. Rutherford backscattering spectroscopy showed gradual reduction in the oxygen content of ITO with increasing [D₂] by 1% and then demonstrated an abrupt increase of the oxygen content with the increase of [D₂] than 1%. The films with [D₂] < 1% were oxygen deficient, but those with [D₂] > 1% were excess of oxygen. The most oxygen deficient film of [D₂] = 1% was the most conductive. Behavior in the resistivity with [D₂] looks parallel to that in the oxygen content. A lower resistivity of the films corresponded well to oxygen vacancy rather than hydrogen interstitial.     

Recovery of platinum, tin and indium from spent catalysts in chloride medium using strong basic anion exchange resins

This work describes a route for platinum recovery from spent commercial Pt and PtSnIn/Al₂O₃ catalysts using strong basic mesoporous and macroporous anion exchange resins (Cl⁻ form). The catalysts were leached with aqua regia (75 °C, 20-25 min). Platinum adsorption was influenced by the presence of other metals which form chlorocomplexes (tin, indium) and also base metals (aluminum). However, it was possible to overcome this fact by a sequential desorption procedure. Aluminum was selectively removed from the resins by elution with 3 mol L⁻¹ HCl. Platinum was desorbed passing 1 mol L⁻¹ Na₂S₂O₃ (pH 9). Tin was removed by elution with 0.1 mol L⁻¹ ascorbic acid. Indium was removed using 0.1 mol L⁻¹ EDTA as eluent. Desorption efficiency exceeded 99% for all metals. Metals were recovered in high yields (>98 wt%).     

Characteristics of the CdZnS thin film doped by thermal diffusion of vacuum evaporated indium films

Effects of the thickness of indium films and the annealing temperature on structural, optical and electrical properties of chemically deposited cadmium zinc sulfide (CdZnS) films were investigated. X-ray diffraction patterns of CdZnS films indicate that the minimum thickness and annealing temperature for the formation of an In₂O₃ layer, which acts as a barrier preventing the out-diffusion of indium, are 20 nm and 350°C, respectively. In₂O₃ layers give the high optical transmittance due to their transparent properties. As the thickness of indium film and the annealing temperature increase, the conductivity of CdZnS films improves and the lowest resistivity of 0.3 Ω cm is attained for CdZnS films with 40 nm indium coating and annealed at 450°C.