Organic field-effect transistor with extended indium tin oxide gate structure for selective pH sensing

In this study, organic field-effect transistors (OFETs) with extended gate structure were fabricated for selective pH sensing applications. Indium tin oxide (ITO) was used as extended gate electrode as well as an active layer for H⁺ sensing. The threshold voltage of the fabricated ion-selective OFET was varied by the changes in the electrochemical potential at the ITO electrode surface upon its exposure to buffer solutions with variable pH values. The sensor showed excellent linearity and a high sensitivity of 57–59 mV/pH in the pH range of 2–12. The selectivity of the ITO sensing layer to H⁺ ions was also investigated by measuring the interfering effect of Ca²⁺ and K⁺ ions in the buffer pH solutions. The results showed that the Ca²⁺ and K⁺ ions weakly interfere with the selective pH sensing of the ITO-extended gate OFET sensor device.     

Transparent Ga and Zn co-doped In2O3 electrode prepared by co-sputtering of Ga:In2O3 and Zn:In2O3 targets at room temperature

This study examined the characteristics of Ga:In₂O₃ (IGO) co-sputtered Zn:In₂O₃ (IZO) films prepared by dual target direct current (DC) magnetron sputtering at room temperature in a pure Ar atmosphere for transparent electrodes in IGZO-based TFTs. Electrical, optical, structural and surface properties of Ga and Zn co-doped In₂O₃ (IGZO) electrodes were investigated as a function of IGO and IZO target DC power during the co-sputtering process. Unlike semiconducting InGaZnO₄ films, which were widely used as a channel layer in the oxide TFTs, the co-sputtered IGZO films showed a high transmittance (91.84%) and low resistivity (4.1 × 10^− 4 Ω cm) at optimized DC power of the IGO and IZO targets, due to low atomic percent of Ga and Zn elements. Furthermore, the IGO co-sputtered IZO films showed a very smooth and featureless surface and an amorphous structure regardless of the IGO and IZO DC power due to the room temperature sputtering process. This indicates that co-sputtered IGZO films are a promising S/D electrode in the IGZO-based TFTs due to their low resistivity, high transmittance and same elements with channel InGaZnO₄ layer.     

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Considering practical applications in electronic devices, we studied the growth of In₂O₃ thin films on amorphous glasses by magnetron sputtering at room temperature and annealing effect on the structural and electrical properties. The vacuum annealed In₂O₃ thin films display a grain size enlargement and preferential orientation. Electrical characterization shows that the vacuum annealed In₂O₃ thin films exhibit a significant enhancement of both electron density and mobility, while air ambient annealing leads to a remarkable drop. The mechanism of the electrical characteristic changes in In₂O₃ thin films by annealing is explored by using different scattering mechanisms. Finally, a thin film transistor device using vacuum annealed In₂O₃ nano-meter thin films as active channel material is demonstrated.     

Nanostructured thin films of indium oxide nanocrystals confined in alumina matrixes

Nanocrystals of indium oxide (In₂O₃) with sizes below 10 nm were prepared in alumina matrixes by using a co-pulverization method. The used substrates such as borosilicate glasses or (100) silicon as well as the substrate temperatures during the deposition process were modified and their effects characterized on the structural and physical properties of alumina-In₂O₃ films. Complementary investigation methods including X-ray diffraction, optical transmittance in the range 250-1100 nm and transmission electron microscopy were used to analyze the nanostructured films. The crystalline order, morphology and optical responses were monitored as function of the deposition parameters and the post-synthesis annealing. The optimal conditions were found and allow realizing suitable nanostructured films with a major crystalline order of cubic phase for the In₂O₃ nanocrystals. The optical properties of the films were analyzed and the key parameters such as direct and indirect band gaps were evaluated as function of the synthesis conditions and the crystalline quality of the films.     

硫化铟常规酸浸和氧化酸浸试验研究

用人工合成的硫化铟模拟实际硫化铟,研究了硫化铟在硫酸体系中常规浸出和以高锰酸钾、双氧水为氧化剂的氧化浸出的浸出效果和工艺条件。结果表明：在搅拌速度为800 r/min、物料粒度为75~96 μm、液固比为300∶1、温度为80 ℃、硫酸初始浓度为2.0 mol/L的条件下,常规浸出60 min,铟的浸出率为84.9%;而在相同条件下加入氧化剂KMnO₄或H₂O₂进行氧化浸出,只需20 min就可使铟的浸出率达到94.9%或92.8%。在温度＜70 ℃时,氧化剂的效应起主要作用,高锰酸钾的氧化效果比双氧水更明显;在温度＞70 ℃时,温度效应占主导地位,两种氧化剂的影响差别不大。     

Highly conductive buried n+ layers in lnp:fe created by MeV energy Si,S, and Si/S implantation for application to microwave devices

To obtain highly conductive buried layers in InP:Fe, MeV energy Si, S, and Si/ Simplantations are performed at 200°C. The silicon and sulfer implants gave 85 and 100 percent activation, respectively, for a fluence of 8 × 10¹⁴ cm⁻². The Si/S co-implantation also gave almost 100 percent donor activation for a fluence of 8 × 10¹⁴ cm⁻² of each species. An improved silicon donor activation is observed in the Si/S co-implanted material compared to the material implanted with silicon alone. The peak carrier concentration achieved for the Si/S co-implant is 2 × 10¹⁹ cm³. The lattice damage on the surface side of the profile is effectively removed after rapid thermal annealing. Multiple-energy silicon and sulfur implantations are performed to obtain thick and buried n⁺ layers needed for microwave devices and also hyper-abrupt profiles needed for varactor diodes.     

Ballistic nano-devices for high frequency applications

In this paper, we present a study on three-terminal ballistic junction and their applications to rectifiers and MUX/DEMUX. Rectifying effect is observed up to 94 GHz at room temperature. Although THz frequency performance has been demonstrated by Monte Carlo simulation, the high impedance of the nano-device combined with the parasitic capacitances is a limiting factor.     

超细氢氧化铟的研制

本文简要介绍在有斯盘存在且pH为4．7的条件下，用尿素水解均匀沉淀法，获得的In(OH)3沉淀，比表面积9-15m2／g，粒度分布0．15—0．60μm，用于无汞碱性电池，效果满意。     

Study of indium droplets formation on the InxGa1−xN films by single crystal x-ray diffraction

Indium droplet formation during the epitaxial growth of In_xGa_1−xN films is a serious problem for achieving high quality films with high indium mole fraction. In this paper, we studied the formation of indium droplets on the In_xGa_1−xN films grown by metalorganic chemical vapor deposition (MOCVD) using single crystal x-ray diffraction. It is found that the indium (101) peak in the x-ray diffraction spectra can be utilized as a quantitative measure to determine the amounts of indium droplets on the film. It is shown by monitoring the indium diffraction peak that the density of indium droplets increases at lower growth temperature. To suppress these indium droplets, a modulation growth technique is used. Indium droplet formation in the modulation growth is investigated and it is revealed in our study that the indium droplets problem has been partially relieved by the modulation growth technique.     

Nonstoichiometry and solubility of impurity in In-doped PbTe films on Si substrates

The chemical quantitative composition, phase constitution, and crystal structure of doped with In lead telluride films on Si (1 0 0) or SiO₂/Si (1 0 0) substrates have been studied in this work. By EPMA and atomic absorption measurements, it has been found that the concentration of In atoms y_In varied from 0.0011 to 0.045 in these deposited Pb_1−yIn_yTe films. The results of EPMA, SEM, and X-ray diffraction (XRD) measurements show that formation of In solid solutions in lead telluride matrix revealed not only in PbTe–InTe cross-section, but in PbTe–In₂Te₃ pseudobinary system also. The results of XRD show that the lattice parameter a_PbTe of PbTeIn/Si and PbTeIn/SiO₂/Si heterostructures is described by nonmonotone function and does not obey the Vegard's law within concentration interval 0.0011y_In0.045.