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81.
通过对中国石油大连石化分公司Ⅱ套蒸馏装置扩能改造的设计实践,总结归纳了在老工艺装置上采用立体传质塔盘等新技术、新设备的应用成果。改造后的标定数据表明,改造后装置处理能力可达5.1Mt/a,常、减压系统主要产品质量满足设计要求,装置能耗在386.94—406.60MJ/t,低于设计值。 相似文献
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In this work we present the discrete models for dynamic fracture of structures built of brittle materials. The models construction is based on Voronoi cell representation of the heterogeneous structure, with the beam lattice network used to model the cohesive and compressive forces between the neighboring cells. Each lattice component is a geometrically exact shear deformable beam which can describe large rigid body motion and the most salient fracture mechanisms. The latter can be represented through the corresponding form of the beam constitutive equations, which are derived either at microscale with random distribution of material properties or at a mesoscale with average deterministic values. The proposed models are also placed within the framework of dynamics, where special attention is paid to constructing the lattice network mass matrix as well as the corresponding time-stepping schemes. Numerical simulations of compression and bending tests is given to illustrate the models performance. 相似文献
85.
A weighting algorithm to determine the coordinates of the center of a Gaussian laser beam projected onto a matrix photodetector is considered. The influence of the internal noise of the photodetector, the maximum brightness of the signal at the beam maximum, and the beam radius on the precision of the algorithm is investigated. Recommendations on image processing are presented. 相似文献
86.
Takuma Suzuki Hang-Ju Ko Agus Setiawan Jung-Jin Kim Koh Saitoh Masami Terauchi Takafumi Yao 《Materials Science in Semiconductor Processing》2003,6(5-6):519-521
We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH3 is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH3 pre-exposure helps form a Zn3N2 layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar. 相似文献
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We have studied properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). A large MCD peak whose intensity is larger than 500 mdeg for (InGaMn)As was observed. This peak intensity was about three times larger than that of typical (GaMn)As films. Relatively high Curie temperature of 83 K of [(In0.53Ga0.47)0.88Mn0.12]As was observed by Hall measurements. The carrier concentration of [(In0.53Ga0.47)0.88Mn0.12]As was estimated to be more than 1.0 × 1021 cm–3 by using the Curie–Weiss fitting of the Hall coefficient R
H, indicating that more than 40% of Mn atoms are activated. This means that (InGaMn)As has a higher activation ratio of Mn as acceptors than (GaMn)As. 相似文献
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