Growth of high-quality GaSb by metalorganic vapor phase epitaxy

The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor. The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature hole mobility and hole concentration of 800 cm² V⁻¹ s⁻¹ and 3·10¹⁶ cm^-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence spectrum is dominated by strong excitonic lines.     

一种新的带优先权控制的ATM交换结构

本文在Ｋｎｏｃｋｏｕｔ交换结构的基础上，探讨一种新的ＡＴＭ交换结构，使其本身带有优先权控制功能，以适应不同业务对信元丢失率及时延的不同要求。这种结构既能最大限度地有效利用系统资源，又能满足不同用户对业务质量的不同要求，并能降低交换结构复杂度。     

Studies on the growth of CdTe on Si using ge interfacial layer in an organometallic vapor phase epitaxial system

Epitaxial CdTe layers were grown using organometallic vapor phase epitaxy on Si substrates with a Ge buffer layer. Ge layer was grown in the same reactor using germane gas and the reaction of germane gas with the native Si surface is studied in detail at low temperature. It is shown that germane gas can be used to “clean” the Si surface oxide prior to CdTe growth by first reducing the thin native oxide that may be present on Si. When Ge layer was grown on Si using germane gas, an induction period was observed before the continuous layer of Ge growth starts. This induction period is a function of the thickness of the native oxide present on Si and possible reasons for this behavior are outlined. Secondary ion mass spectrometry (SIMS) data show negligible outdiffusion and cross contamination of Ge in CdTe.     

铯原子激光共振电离

用Ｎｄ：ＹＡＧ及其泵浦的染料激光进行铯原子三步共振电离。求解了非饱和共振过程速率方程，计算出基态和激发态共振吸收截面，给出电离效率分别与激发电离速率以及作用时间的变化关系，得到饱和激发电离的流量条件和通量条件。     

InSb,GaSb, and GaInSb grown using trisdimethylaminoantimony

GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium (TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb. In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga_1-xIn_xSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between 1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all p-type with carrier concentrations of approximately 10¹⁷ cm³. Transmission electron diffraction studies indicate that the Ga_0.5In_0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This is the first report of ordering in GalnSb alloys.     

GaP：（N）的背景光谱和发光尖峰

获得高分辨ＧａＰ（Ｎ）光致发光光谱，观察到等电子陷陆束缚激子发光中ＬＯ和ｌｏｃ多声子发射，其强度分布答合泊松分布。将声子伴带区分为直接光跃迁和间接光跃迁，并进行了相应讨论，还观察到局域声子效应－－光谱相似定律和相当显著的背景光谱。     

宝钢3号高炉计算机系统的RAS性能设计

在宝钢３号高炉计算机系统的开发过程中十分注意系统ＲＡＳ性能设计。本文介绍了３号高炉计算机系统设计中，为提高系统的ＲＡＳ性能所采取的各种对策。     

Magnetic properties of nickel filament polymer-matrix composites

The magnetic properties of polyethersulfone-matrix composites with 3-19 vol.% polycrystalline nickel filaments (0.4 (im diam) were investigated. These filaments were found to exhibit hysteresis energy loss 10800 J/m³ of nickel and coercive force 16.9 kA/m, compared to corresponding values of 4930 J/m³ and 4.7 kA/m for 2 μ.m diam polycrystalline nickel fibers, 1020 J/m³ and 0.5 kA/m for 20 μm diam polycrystalline nickel fibers, and 1280 J/m³ and 2.3 kA/m for solid polycrystalline nickel.     

核电厂放射性监测系统仿真的数学物理模型

较详细地介绍了在北京核电厂模拟培训中心的模拟器上建立ＲＭＳ仿真系统的工作。首先对仿真的原型进行分析和简化，建立数学物理模型，并对包括ＲＣＳ、ＰＺＲ、ＳＧ、ＣＶＣＳ等的近２０个核电厂系统进行了动态仿真建模，确定ＲＭＳ各监测点放射性水平仿真读数的计算方法，最后，给出部分仿真实验结果，以验证数学物理模型的可靠性和适用性。     

超低膨胀陶瓷K_（2x）Ba_（1－x）Zr_4（PO_4）_6系统的X射线衍射

用高温Ｘ射线衍射方法对磷酸锆钡钾系统陶瓷材料的各向异性热膨胀作了研究．对七个组份试样的７７套高温Ｘ射线衍射图作了仔细的指标化和精密点阵常数测定．点阵常数随温度作非线性变化·对Ｋ_２ｘＢａ_１－ｘＺｒ_４（ＰＯ_４）_６的不同组份不同温度（３００～１３００Ｋ）的热膨胀系数。α_ａ、α_ｃ、　作了测定·该系统零膨胀陶瓷的组份为Ｋ_１．１６Ｂａ_０．４２Ｚｒ_４（ＰＯ_４）_６（ｘ＝０．５８）