Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.     

Computational analysis of thin coating layer failure using a cohesive model and gradient plasticity

Thermal barrier coatings (TBC) are widely used to prevent transient high temperature attack and allow components high durability. Due to strong inhomogeneous material properties the TBC failure often initiates near the interface between the brittle oxide layer and the ductile substrate. A reliable prediction of the TBC failure requires detailed information about the crack tip field and the consequent fracture criteria. In the present paper both cohesive model and gradient plasticity are used to simulate the failure process and to study interdependence of the interface stress distribution with the specific fracture energies. Computations confirm that combination of the two models is able to simulate different failure mechanisms in the TBC system. The computational model has the potential to give a realistic prediction of the crack propagation process.     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

海河流域河道外生态需水研究

水土流失是海河流域较为突出的生态环境问题之一。经对比研究发现，植被覆盖度的变化会通过影响洪充量，土壤侵蚀量等因子，进而改变水土流失的状况。从提高植被覆盖度尤其是低覆盖度草地植被的角度出发，定量研究了为改善流域水土流失状况河道外生态需水的具体数额，得出海河流域现状年河道外生态耗水（降水）385亿m^3。另外，为改善河道外生态环境状况将低覆盖度草地提高地提高至中等覆盖度水平，则需要增加生态需水12．5亿m^3。     

Doped silicon and NIS junctions for bolometer applications

We discuss the performance, of a normal metal hot electron bolometer (NHEB) that we have measured at 0.3 K. We found that the noise equivalent power was limited by the amplifier noise. To improve the NHEB power response and to make it more robust and reliable we propose to substitute the normal metal with heavily doped silicon. The heavily doped silicon behaves like a metal with lower carrier concentration and has a smaller electron–phonon thermal coupling. We have fabricated superconductor-doped silicon-superconductor contacts (S-Sm-S) and we have used them as thermometers and coolers.     

下T6-361井多井防碰绕障技术

下T6—361井是一口双靶定向井，由于受地面和地质条件的限制，必须穿越9口井，其中最近的4口井防碰距仅为13—32m，钻井施工难度大，是一口较典型的多井防碰绕障定向井。在优化井身剖面设计、优选钻具组合、采用导向钻井技术的基础上，采取了一系列安全钻进措施，顺利钻至设计井深。对该井的地质工程设计、井眼轨迹控制及防碰绕障技术等进行了介绍，对同类型井的施工有一定的借鉴。     

Using Bandwidth-Space Partitioning to Improve Cell Coverage and Near-Far Unfair Access Problem in a Noise-Limited CDMA Cellular Network

This paper concerns CDMA cellular networks equipped with conventional matched filter receivers. For this type of cellular networks, two problems exist. One is the inverse relationship between the coverage and capacity, and the other one is the near-far unfair access problem. To resolve these two problems, a bandwidth-space partitioning technique is adopted. Several admission control schemes based on the bandwidth-space partitioning technique are proposed, and their performances are evaluated based on the simulation.Shih-Tsung Yang received his B.S. (1989) and M.S. (1991) degrees in electrical engineering from the National Taiwan University, and Ph.D. (1999) degree in electrical and computer engineering from University of Maryland, College Park.From 1999 to 2000, he was with SBC Technology Resourtces, Inc. where he was involved in the network architecture design for the ATM based networks. From November 2000 to May 2003, he was with Transilica/Microtune where he was involved in the design of Baseband and RF for the wireless communications. Since May 2003, Dr. Yang is now with Genesys Logic, Inc. where he is responsible for the baseband design of the WLAN and Ethernet.Dr. Yang’s research interests are in the area of Digital Communications, Communication networks and signal processing. E-mail: thomas.yang@genesyslogic.com.twAnthony Ephremides received his B.S. degree from the National Technical University of Athens (1967), and M.S. (1969) and Ph.D. (1971) degrees from Princeton University, all in Electrical Engineering. He has been at the University of Maryland since 1971, and currently holds a joint appointment as Professor in the Electrical Engineering Department and in the Institute of Systems Research (ISR) of which he is a founding member. He is co-founder of the NASA Center for Commercial Development of Space on Hybrid and Satellite Communications Networks established in 1991 at Maryland as an off-shoot of the ISR. He served as Co-Director of that Center from 1991 to 1994.He was a Visiting Professor in 1978 at the National Technical University in Athenas, Greece, and in 1979 at the EECS Department of the University of California, Berkeley, and at INRIA, France. During 1985-1986 he was on leave at MIT and ETH in Zurich, Switzerland. He was the General Chairman of the 1986 IEEE Conference on Decision and Control in Athens, Greece and of the 1991 IEEE International Symposium on Information Theory in Budapest, Hungary. He also organized two workshops on Information theory in 1984 (Hot Springs, VA) and in 1999 (Metsovo, Greece). He was the Technical Program Co-Chair of the IEEE INFOCOM in New York City in 1999 and of the IEEE International Symposium on Information theory in Sorrento, Italy in 2000. He has also been the Director of the Fairchild Scholars and Doctoral Fellows Program, an academic and research partnership program in Satellite Communications between Fairchild Industries and the University of Maryland. He won the IEEE Donald E. Fink Prize Paper Award (1992) and he was the first recipient of the Sigmobile Award of the ACM (Association of Computer Machinery) for contributions to wireless communications in 1997. He has been the President of the Information Theory Society of the IEEE (1987) and has served on its Board of Governors almost continuously from 1981 until the present. He was elected to the Board of Directors of the IEEE in 1989 and 1990. Dr. Ephremides has authored or co-authored over 100 technical journal papers and 300 technical conference presentations. He has also contributed chapters to several books and edited numerous special issues of scientific journals. He has also won awards from the Maryland Office of Technology Liaison for the commercialization of products and ideas stemming from his research. He has served on the Editorial Boards of the IEEE Transactions on Automatic Control, IEEE Transactions on Information theory, the Journal of Wireless Networks, and the International Journal of Satellite Communications.He has been the Dissertation Supervisor of over twenty Ph.D. students who now hold prominent positions in academia, industry, and research labs. He is the founder and President of Pontos, Inc., a Maryland company that provides technical consulting services, since 1980.Dr. Ephremides’ interests are in the areas of communication theory, communication systems and networks, queueing systems, signal processing, and satellite communications. His research has been continuously supported since 1971 by NSF, NASA, ONR, ARL, NRL, NSA, and Industry. E-mail: tony@eng.umd.edu