Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

(Cd,Co,Nb)掺杂的SnO2压敏材料的电学性质

研究了Cd对(Co，Nb)掺杂SnO2压敏材料电学性质的影响。组分为97．65％SnO2 O．75％Co2O3 0．10％Nb2O5 1．50％CdO的压敏电阻具有最大非线性系数(a=22．2)和最高的势垒(ψB=0．761eV)．当CdO的摩尔分数从0增加到3％时，(Co，Nb)掺杂SnO2压敏电阻的击穿电压从366V／mm增大到556V／mm，1kHz时的相对介电常数从1429减小到1108。晶界势垒高度测量揭示，SnO2的晶粒尺寸的减小是击穿电压增高和介电常数减小的主要原因。对Cd掺杂量增加引起SnO2晶粒减小的根源进行了解释。     

High‐pressure processing effects on the mechanical,barrier and mass transfer properties of food packaging flexible structures: a critical review

Food products can be high‐pressure processed (HPP) either in bulk or prepackaged in flexible or semi‐rigid packaging materials. In the latter case the packaging material is subjected, together with the food, to high‐pressure treatment. A number of studies have been performed to quantify the effects of high‐pressure processing on the physical and barrier properties of the packaging material, since the integrity of the package during and after processing is of paramount importance to the safety and quality of the food product. This article reviews the results of published research concerning the effect of HPP on packaging materials. Copyright © 2004 John Wiley & Sons, Ltd.     

基于蚁群算法的区域覆盖卫星星座优化设计

首先建立了以区域覆盖性能为目标的卫星星座参数优化模型,通过在连续域定义新的蚂蚁分类与转移策略改进了蚁群算法,使算法能够兼顾多目标优化时目标不兼容的情况,给出了基于该算法实现星座参数优化的框架。优化仿真实验验证了该算法的有效性,可为星座方案决策提供有力的支持。     

Low-resistance polysilicon process in contact application for high density devices

For the lowest resistance, it is required to have the epitaxial silicon contact between the silicon plug and the substrate and good step coverage at the high aspect-ratio contact holes, simultaneously. In this work, a double polysilicon (DPS) deposition technique was proposed for the requirements. The first, thin silicon layer is deposited in a single-wafer process chamber with an in-situ H₂-RTP (rapid thermal process) treatment for the epitaxial contact, and the second silicon layer is formed in a batch-type furnace for good step coverage. From chain resistance, Kelvin R_c, and current-voltage (I–V) measurement, the DPS process meets both low resistance and good uniformity, so that it suggests a breakthrough in the small-sized, semiconductor device application.     

黄河流域多沙粗沙区植被覆盖变化与减水减沙效益分析

通过遥感手段和数字流域模型,研究了黄河流域多沙粗沙区近10来年的植被覆盖变化及其减水减沙效益。研究表明,多沙粗沙区90年代末期与80年代末期相比,植被覆盖度增加区域大约占50%,植被覆盖度没变化区域约占48%。植被覆盖度的变化导致了流域水沙条件的变化,90年代末期植被覆盖条件下,植被措施的减水减沙百分比不高;不同的降雨过程,植被措施的减水减沙效益有一定的差别;从不同降雨过程多年平均看,近10来年植被措施年均减水2.63亿m3,减沙1.13亿t,减水减沙比为2.75,即减1亿t沙的同时减水2.75亿m3,减水百分比为7.61,减沙百分比为10.56,减沙效益大于减水效益。     

Pinhole density measurements of barriers deposited on low-k films

Evaluation of diffusion barrier integrity is an important issue in advanced interconnects. A diffusion barrier separating Cu from low-k must be as thin as possible and must not contain pinholes. We have developed a method for measuring pinhole density in diffusion barriers deposited on low-k materials. The method employs ellipsometric porosimetry for measuring diffusion of toluene in a porous low-k film beneath the barrier in question.     

高温合金表面激光熔敷热障涂层组织结构与氧化性能

采用 5KW连续CO2 激光器对Ni基高温合金上二次重熔NiCoCrAlY和ZrO2 陶瓷层进行了研究。结果表明 :激光快速熔化和凝固获得定向外延生长、紧密堆积的柱状晶氧化锆陶瓷层。NiCoCrAlY结合层与柱状晶之间存在氧化铝层 ,保证了柱状晶与NiCoCrAlY层的联结。扫描电镜和电子探针联合分析发现 ,氧化锆层与NiCoCrAlY结合层、结合层与基体间均为冶金结合。采用化学改性氧化锆消除了涂层裂纹。高温氧化性能测试得出激光重熔试样氧化动力学近似地遵守抛物线速率方程。在 12 0 0℃ ,空气下激光熔敷TBCs 抗氧化性明显高于等离子喷涂TBCs。     

Hydrogen production from methane in a dielectric barrier discharge using oxide zinc and chromium as catalyst

The hydrogen fuel cell is a promising option as a future energy resource; however, the nature of the gas is such that the conversion process of other fuels to hydrogen on board is necessary. Among the raw fuel resources, methane could be the best candidate as it is plentiful. In this experiment, the possibility of producing hydrogen with less carbon formation from methane by a dielectric barrier discharge (DBD) was investigated. Without the addition of a catalyst, the formation of hydrogen reached between 30% and 35% at methane residence time of 0.22 min and supplied powers in the range of 60-130 W. The hydrogen selectivity increased at higher supplied power, but the process efficiency, defined as a ratio of the produced hydrogen to the supplied power, decreased slightly. In order to boost the hydrogen production with less carbon formation, a mixed oxide catalyst of zinc and chromium was added to the reactor. It was shown that the production of hydrogen was ca. 40% higher than the non-catalytic plasma process.