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991.
高灵敏度热释电摄象管红外电视系统 总被引:1,自引:0,他引:1
针对热释电摄象管(PEV)在传统的对称斩波模式下存在的各种问题,设计了一种新的非对称斩波模式PEV红外电视系统.通过提高PEV摄象机的温度响应率R_i和采用高去噪声信号处理系统,大大改善了PEV红外成象系统的性能. 相似文献
992.
Anionic copolymerizations of styrene (M1) with excess 1-(4-dimethyl-aminophenyl)-1-phenylethylene (M2) were conducted in benzene at 25°C for 24h, using sec-butyllithium as initiator. Narrow molecular weight distribution copolymers with M?;n = 16.1 × 103 g/mol (M?w/M?n = 1.04) and 38.2 × 103g/mol (M?w/M?n = 1.05), and 24 and 38 moles of M2 per macromolecule, respectively, were characterized by size exclusion chromatography, 1H NMR spectroscopy and DSC. The monomer reactivity ratio, r1 = 5.6, was obtained from the copolymer composition at complete consumption of M1, assuming that the rate constant k22 =0,i.e. r2 =0. The polymers exhibited Tg values of 128 and 119°C, respectively, which correspond to an estimated Tg = 217°C for the hypothetical homopolymer of M2. 相似文献
993.
Backscattered electron (BSE) images of heat-cured concretes show alite grains surrounded by inner C-S-H gel of two distinct grey levels (referred to as two-tone inner C-S-H gel). The lighter rim forms at elevated temperature whereas the darker rim develops during subsequent exposure to moisture at 20 °C. This microstructural feature can potentially be used as an indicator to assess the curing history of a concrete. However, microstructural examinations of room-temperature concretes containing silica fume or which have been exposed to severe conditions (external sulfate, carbonation) also show distinct rims of two-tone inner C-S-H gel.The chemical compositions of the rims were determined by EDX microanalysis in the scanning electron microscope (SEM). Our results show that for heat-cured samples, the different grey levels of the two-tone inner C-S-H are caused by relative differences in microporosity and water content and not by ones in chemical composition. However, in silica-fume blended concrete, sulfate attacked or carbonated specimens the different grey levels of the two-tone inner C-S-H gel were associated with significant differences in chemical composition. This difference allows two-tone inner C-S-H gel arising from heat curing to be distinguished from that arising from these other causes. 相似文献
994.
995.
提出了三维定量储层地质模型及其参数动态预测方法,用该方法可预测储层开采状态,水淹区及剩余油区分布和各剩余油区的可采储量,三维定量储层地质模型的预测图件可为合理开采提供依据。 相似文献
996.
997.
Y. Nakamura Ichiro Tanaka N. Takeuchi S. Koshiba H. Sakaki 《Journal of Electronic Materials》1998,27(11):1240-1243
We studied morphology of GaAs surfaces and the transport properties of two-dimensional electron gas (2DEG) on vicinal (111)B
planes. Multi-atomic steps (MASs) are found on the vicinal (111)B facet grown by molecular beam epitaxy, which will affect
electron transport on the facet. We also studied how the morphology of GaAs epilayers on vicinal (111)B substrates depends
on growth conditions, especially on the As4 flux. The uniformity of MASs on the substrates have been improved and smooth surfaces were obtained when the GaAs was grown
with high As4 flux, providing step periodicity of 20 nm. The channel resistance of the 2DEG perpendicular to the MASs is reduced drastically
with this smooth morphology. These findings are valuable not only for fabricating quantum devices on the (111)B facets but
also those on the vicinal (111)B substrates. 相似文献
998.
红外热成象技术可以有效地用于股骨头坏死疾病的诊断和针刺治疗效果的评价,效果优于其它常规方法。 相似文献
999.
Xiang Lu S. Sundar Kumar Iyer Jin Lee Brian Doyle Zhineng Fan Paul K. Chu Chenming Hu Nathan W. Cheung 《Journal of Electronic Materials》1998,27(9):1059-1066
We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII)
for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high
cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation
of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous
buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO2 interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique
is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant
in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen
induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure
combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force
which is sufficient to overcome the silicon fracture resistance. 相似文献
1000.
Measurements of the thermal diffusivity of thin films on substrate have been performed by the photoacoustic method. In order to examine the method we have built a new apparatus and proposed (1) a system calibration procedure using optically and thermally thick reference samples and (2) a data analysis procedure based on the RG (Rosencwaig and Gersho) theory. As a result of using a transparent photoacoustic cell, the systematic errors which are caused by stray light have been reduced. With this apparatus, measurements have been performed on platinum, titanium, and stainless steel (SUS304) thin foils (thickness form 50 to 100 µm) with three different liquid backing materials (water, glycerol, and ethyl alcohol). The reproducibility was within ±7% regardless of film thickness and substrate materials. 相似文献