高强IF钢析出物的析出特征

高强ＩＦ钢是汽车用深冲钢板中深冲性能最好的高强度钢板。目前，国际上对该钢种的研究十分活跃。本文在实验条件下，通过对高强ＩＦ钢析出物的观察研究了高强ＩＦ钢析出物的析出特征，发现了新的析出相ＴｉＦｅＰ，并对磷对深冲性能影响的作用机制，进行了探讨。     

无间隙原子钢的微观结构特征和塑性应变比

采用Ｘ射线衍射的ＯＤＦ和ＬＰ分析技术，ＳＥＭ电子通道花样和蚀坑技术观测，研究了超深冲无间隙原子钢板的微观结构特征。结果表明：控制化学成分、保证基体纯净、优选工艺参数，促进强的γ－〈１１１〉∥Ｎ．Ｄ纤维织构的形成是获得优异成型性的关键。用ＣＭＴＰ方法，由ＯＤＦ织构数据从理论计算了塑性应变比（ｒ），表明ｒｍ值高达３．１８。文中讨论了再结晶织构形成机制。     

MIS型单晶硅液晶光阀

详细介绍了一种新颖、快速响应的金属－绝缘层－半导体构成的MIS型单晶硅液晶光阀的结构、工作机理、制作工艺和性能参数测试。液晶采用45°扭曲向列型混合场效应工作模式。所得到的光阀的极限分辨率为40lp／mm，口径40mm，最大对比度＞100：1，在930nm（△λ＝40nm）写入光灵敏度为20μW／cm2，响应时间为15ms。报道了该光阀在大屏幕投影显示中的应用。     

Growth of high-quality GaSb by metalorganic vapor phase epitaxy

The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor. The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature hole mobility and hole concentration of 800 cm² V⁻¹ s⁻¹ and 3·10¹⁶ cm^-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence spectrum is dominated by strong excitonic lines.     

Studies on the growth of CdTe on Si using ge interfacial layer in an organometallic vapor phase epitaxial system

Epitaxial CdTe layers were grown using organometallic vapor phase epitaxy on Si substrates with a Ge buffer layer. Ge layer was grown in the same reactor using germane gas and the reaction of germane gas with the native Si surface is studied in detail at low temperature. It is shown that germane gas can be used to “clean” the Si surface oxide prior to CdTe growth by first reducing the thin native oxide that may be present on Si. When Ge layer was grown on Si using germane gas, an induction period was observed before the continuous layer of Ge growth starts. This induction period is a function of the thickness of the native oxide present on Si and possible reasons for this behavior are outlined. Secondary ion mass spectrometry (SIMS) data show negligible outdiffusion and cross contamination of Ge in CdTe.     

铯原子激光共振电离

用Ｎｄ：ＹＡＧ及其泵浦的染料激光进行铯原子三步共振电离。求解了非饱和共振过程速率方程，计算出基态和激发态共振吸收截面，给出电离效率分别与激发电离速率以及作用时间的变化关系，得到饱和激发电离的流量条件和通量条件。     

InSb,GaSb, and GaInSb grown using trisdimethylaminoantimony

GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium (TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb. In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga_1-xIn_xSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between 1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all p-type with carrier concentrations of approximately 10¹⁷ cm³. Transmission electron diffraction studies indicate that the Ga_0.5In_0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This is the first report of ordering in GalnSb alloys.     

GaP：（N）的背景光谱和发光尖峰

获得高分辨ＧａＰ（Ｎ）光致发光光谱，观察到等电子陷陆束缚激子发光中ＬＯ和ｌｏｃ多声子发射，其强度分布答合泊松分布。将声子伴带区分为直接光跃迁和间接光跃迁，并进行了相应讨论，还观察到局域声子效应－－光谱相似定律和相当显著的背景光谱。     

宝钢3号高炉计算机系统的RAS性能设计

在宝钢３号高炉计算机系统的开发过程中十分注意系统ＲＡＳ性能设计。本文介绍了３号高炉计算机系统设计中，为提高系统的ＲＡＳ性能所采取的各种对策。     

核电厂放射性监测系统仿真的数学物理模型

较详细地介绍了在北京核电厂模拟培训中心的模拟器上建立ＲＭＳ仿真系统的工作。首先对仿真的原型进行分析和简化，建立数学物理模型，并对包括ＲＣＳ、ＰＺＲ、ＳＧ、ＣＶＣＳ等的近２０个核电厂系统进行了动态仿真建模，确定ＲＭＳ各监测点放射性水平仿真读数的计算方法，最后，给出部分仿真实验结果，以验证数学物理模型的可靠性和适用性。